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    UPG103B Search Results

    UPG103B Datasheets (3)

    NEC
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UPG103B
    NEC WIDE-BAND AMPLIFIER Original PDF 50.72KB 8
    uPG103B
    NEC WIDE-BAND AMPLIFIER Original PDF 44.33KB 8
    UPG103B
    NEC Low Noise Wideband Amplifier Scan PDF 68.83KB 2

    UPG103B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UPG103B

    Contextual Info: LOW NOISE WIDE-BAND AMPLIFIER UPG103B EQUIVALENT CIRCUIT FEATURES VDD • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f = 1 GHz C1 C2 L3 • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGES ASSURE RL1 HIGH RELIABILITY


    Original
    upg103b24-hour PDF

    Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT UPG103B WIDE-BAND AMPLIFIER ¿¡PG103B is GaAs integrated circuit designed as w ide band 50 MHz to 3GHz am plifiers. This device is most suitable for the microwave com m unication system and the m easurem ent equipm ent.


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    upg103bpg103b PDF

    UPG103A

    Abstract: uPG103 UPG103B UPG103P TCB 44
    Contextual Info: SEC LOW NOISE WIDE-BAND AMPLIFIER UPG103A UPG103B UPG103P FEATURES DESCRIPTION • ULTRA WIDE-BAND: 50 MHz to 3 GHz The UPG103 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. The device is most suitable for the IF stage of microwave communication


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    upg103aupg103bupg103pupg103+1tcb 44 PDF

    Contextual Info: LOW NOISE WIDE-BAND AMPLIFIER UPG103B EQUIVALENT CIRCUIT F E A T U R E S _ Vdd • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f = 1 GHz . INPUT/OUTPUT IMPEDANCE MATCHED TO 50 O - HERMETICALLY SEALED PACKAGES ASSURE HIGH RELIABILITY


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    upg103bb4z75e500bbd3b PDF

    UPG103B

    Contextual Info: LOW NOISE WIDE-BAND AMPLIFIER UPG103B EQUIVALENT CIRCUIT FEATURES • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f = 1 GHz VDD C1 C2 L3 • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGES ASSURE RL1 HIGH RELIABILITY


    Original
    upg103b24-hour PDF

    Contextual Info: LOW NOISE WIDE-BAND AMPLIFIER UPG103B EQUIVALENT CIRCUIT FEATURES_ Vdd • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f - 1 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Cl • HERMETICALLY SEALED PACKAGES ASSURE HIGH RELIABILITY


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    upg103bupg10p PDF

    Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT UPG103B WIDE-BAND AMPLIFIER /xP G 103B is G a A s in te g ra te d c irc u it d e s ig n e d as w id e ba nd 50 M H z to 3G H z a m p lifie rs . T h is d e v ic e is m ost s u ita b le fo r th e m ic ro w a v e c o m m u n ic a tio n syste m and th e m e a su re m e n t e q u ip m e n t.


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    upg103bpg103b PDF

    Contextual Info: NEC LOW NOISE WIDE-BAND AMPLIFIER UPG103A UPG103B UPG103P FEATURES DESCRIPTION • ULTRA WIDE-BAND: 50 MHz to 3 GHz The UPG103 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. The device is most suitable for the IF stage of microwave communication


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    upg103aupg103bupg103pupg103 PDF

    Contextual Info: LOW NOISE WIDE-BAND AMPLIFIER UPG103B UPG103P EQUIVALENT CIRCUIT FEATURES_ • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f = 1 GHz vdd • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 i l • HERMETICALLY SEALED PACKAGES ASSURE


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    upg103bupg103pupg103 PDF

    Contextual Info: LOW NOISE WIDE-BAND AMPLIFIER FEATURES_ UPG103B EQUIVALENT CIRCUIT VDD • ULTRA WIDE-BAND: 50 MHz to 3 GHz • LOW NOISE: 4 dB TYP at f = 1 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 ft • HERMETICALLY SEALED PACKAGES ASSURE HIGH RELIABILITY


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    upg103b34-6393/fax PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720 PDF

    Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic


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    upg100bupg101bupg103bupg503b+5upg506bupg501pupg502pupg503pupg506p PDF

    Contextual Info: G a A s Monolithic Circuits Wideband Amplifiers Frequency Teat Gain Range Conditions dB AG (dB) RU n R L out (dB) TYP ISOL (dB) TYP P*fl- Pacta 99 FaxOn Demand TYP MAX TYP MIN (mA) TYP MAX (dB) TYP UPG100B 0.05 to 3.0 V dd = +5V V gg = -5V 16 ±1.5 2.7 +6


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    upg100bupg101bupg103bupg110b+5upg100pupg101pflb08upg503bupg506b PDF

    C1678

    Abstract: c1677 UPC1678B UPG100B uPG101 MARKING 106 UPG101B G100 G101 G103
    Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. B08 1.27±0.1 1.27±0.1 LEADS 2, 4, 6, 8 0.6 0.4 (LEADS 1, 3, 5, 7) 4 3 2 MARKING 10.6 MAX 1 5 3.8±0.2 6 7 8 3.8±0.2 10.6 MAX 1.7 MAX


    Original
    upc1677bc1677upc1678bc1678+9upg100bupg101bupg103b24-hourupg101marking 106g100g101g103 PDF