UPG101 Search Results

UPG101

Abstract: UPG100B UPG101B UPG101P
Contextual Info: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • MEDIUM POWER: TYP P1dB = +18 dBm at f = 50 MHz to 3 GHz • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY

Contextual Info: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P p o w e r g a in a n d n o is e f i g u r e -• U L T R A W ID E B A N D : 5 0 M H z to 3 G H z vs. FREQUENCY

Contextual Info: DATA SHEET_ GaAs INTEGRATED CIRCUIT uPGIOOP, uPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION ¿iPGIOOP and ¿iPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. ¿iPGIOOP is low noise amplifier from 50 MHz to 3 GHz and ¿iPG101P is a medium power amplifier in the same

Contextual Info: DATA SHEET_ GaAs INTEGRATED CIRCUIT //PG100B, uPG101B WIDE-BAND AMPLIFIER The /¿PG100B and /¿PG101B are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. The /¿PG100B is low noise amplifier from 50 MHz to 3 GHz and /¿PG101B is a medium power amplifier in the

l06S

Contextual Info: MEDIUM POWER WIDE-BAND AMPLIFIER UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY FEATURES_ • ULTRA WIDE BAND: 50 MHz to 3 GHz • MEDIUM POWER: +18 dBm TYP at f - 50 MHz to GHz Qf • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 ft

Contextual Info: SEC MEDIUM POWER WIDE-BAND AMPLIFIER OUTLINE DIMENSIONS FEATURES UPG101B UPG101P Units in mm OUTLINE B08 • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27±0.1 1.27±0.1 • MEDIUM POWER: + 18 dBm TYP at f = 50 M Hz to 3 GHz 0.4 (LEADS 1,3,5,7) (LEADS 2,4,6,8) 0.6 *

UPG101B

Abstract: UPG100B UPG101 UPG101P
Contextual Info: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • MEDIUM POWER: TYP P1dB = +18 dBm at f = 50 MHz to 3 GHz • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY

uPG101

Abstract: UPG101B PIAB PIAB CHIP UPG101P gp 532
Contextual Info: NEC MEDIUM POWER WIDE-BAND AMPLIFIER OUTLINE DIM ENSIONS FEATURES UPG101B UPG101P Units in mm O UTLINE B08 • U L T R A W ID E B A N D : 50 MHz to 3 GHz 1.27+01 1.27+0.1 • M E D IU M P O W E R : + 18 dB m TYP at f = 50 M Hz to 3 GHz (LEADS 2.4,6,8) 0.6 '

Contextual Info: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY ULTRA WIDE BAND: 50 MHz to 3 GHz MEDIUM POWER: +18 dBm TYP at f = 50 MHz to GHz oo •D INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Q HERMETICALLY SEALED PACKAGE ASSURES

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic

Contextual Info: G a A s Monolithic Circuits Wideband Amplifiers Frequency Teat Gain Range Conditions dB AG (dB) RU n R L out (dB) TYP ISOL (dB) TYP P*fl- Pacta 99 FaxOn Demand TYP MAX TYP MIN (mA) TYP MAX (dB) TYP UPG100B 0.05 to 3.0 V dd = +5V V gg = -5V 16 ±1.5 2.7 +6

101p1

Abstract: IC-3144
Contextual Info: DATA SHEET_ GaAs INTEGRATED CIRCUIT juPGIOOP, uPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION ¿¿PG100P and ^PG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. ¿¿PG100P is low noise amplifier from 50 MHz to 3 GHz and ¿xPG101P is a medium power amplifier in the same

uPG101

Abstract: internal circuit diagram of choke G100B 101B ICL7660 mmic n5 UPG101B
Contextual Info: A r p . i CA TION NO TE APPLICATION THE WIDE BAND AM PLIFIERS /¿PG1 00B/^PG101B NOTE 1. GENERAL juPG100B/101 B is the GaAs MMIC GaAs Microwave Monolithic Integrated Circuit developed as the low noise wide band amplifier/medium power wide band amplifier.

C1678

Abstract: c1677 UPC1678B UPG100B uPG101 MARKING 106 UPG101B G100 G101 G103
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. B08 1.27±0.1 1.27±0.1 LEADS 2, 4, 6, 8 0.6 0.4 (LEADS 1, 3, 5, 7) 4 3 2 MARKING 10.6 MAX 1 5 3.8±0.2 6 7 8 3.8±0.2 10.6 MAX 1.7 MAX

NEC Ga FET marking L

Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
Contextual Info: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima

prescaler 120 ghz

Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V