101B Search Results

LL101A

Abstract: LL101C SD101 SD101A SD101AW SD101AWS SD101C SD101CWS
Contextual Info: SD101AW / 101BW / 101CW Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The low forward voltage drop and fast switching make it ideal for protection of e3 MOS devices, steering, biasing and coupling diodes for fast switching and low logic level

101B

Abstract: 101C DO35 SD101A SD101A-TAP SD101A-TR SD101B SD101C
Contextual Info: SD101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC

Contextual Info: MOS FET Relays G3VM-101BR/ER Compact, General-purpose, Analog-switching MOS FET Relays, with 2A Switching. • Continuous load current of 2A Connection C: 4A • Switches minute analog signals • Dielectric strength of 2,500 Vrms between I/O • RoHS Compliant

Contextual Info: MLC FILTERS TOYOCOM FOR PHS Type TMF-101B TMF-201 B TMF-301B N o m in a l fre q u e n c y 1 9 0 7 .5 M H z 1 9 0 7 .5 M H z 1660M H z 1 8 9 5 -1920M H z 1 8 9 5 -1 920M H z 1 6 4 7 .5 ~ 1 6 7 2 .5 M H z In s e rtio n lo ss 1 .8 d B M a x 1 8 9 3 - 1 9 1 9 M H z

Contextual Info: G3VM-101BR/ER MOS FET Relays DIP Compact, General-purpose, Analog-switching MOS FET Relays, with 2-A Switching. • Continuous load current of 2 A. Connection C : 4 A • Switches minute analog signals. G3VM-101BR/ER • Dielectric strength of 2,500 Vrms between I/O.

101B

Abstract: 101C MCL101A MCL101B MCL101C
Contextual Info: MCL101A / 101B / 101C Small Signal Schottky Barrier Diodes Features Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Applications HF-Detector Protection circuit Diode for low currents with a low supply voltage

101B

Abstract: 101C DO35 LL101 LL101A SD101A SD101AW SD101BW SD101CW
Contextual Info: LL101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected e2 by a PN junction guard ring. • The low forward voltage drop and fast

Contextual Info: SD101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Applications HF-Detector Protection circuit Diode for low currents with a low supply voltage

Contextual Info: LL101A / 101B / 101C VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching

SOD123 4001

Contextual Info: SD101AW / 101BW / 101CW Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The low forward voltage drop and fast switching make it ideal for protection of e3 MOS devices, steering, biasing and coupling diodes for fast switching and low logic level

Contextual Info: SD101AW / 101BW / 101CW VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching

101BW

Abstract: SD101AWS-GS08
Contextual Info: SD101AWS / 101BWS / 101CWS Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon e3 Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching

Contextual Info: molex MAGNET WIRE TO MAGNET WIRE M agKrim p T O Wire Connectors Magnel Wire Gouge 5 10 12 14 16 18 Wires Per Connection 2 3 19195 1005 4 5 19195-1002 19195-1004 19195-1005 19195-1006 19195-1007 19195-1011 19195-1012 19195-101B 19195-1019 19195-1021 19195-1022

Contextual Info: V23101D 101B201 Product Details C om m u n ication s / S ignal PC Board Re lays Converted to EU RoHS/ELV Compliant Statement of Compliance Previous 1 . 6 [7] 8 9 10 . 20 Next Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector

Contextual Info: Doc. No. Product Specifications Customer 10.1INCH-LED"TFT LCD Module Description Model No LM-P0-101B17LI1 Doc. NO. Revision 01 Date 2009/08/03 Customer Approval Date Approval Check YIN.WK CARRIO.HE Factory address : Hao ye RD.,Tong fu yu industrial Park Fu

DO35

Abstract: LL101A LL101C SD101 SD101A SD101C SD101CWs-v
Contextual Info: SD101AWS-V/101BWS-V/101CWS-V Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon e3 Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching

Contextual Info: LS101A / 101B / 101C VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Applications 9612009 HF-Detector

DO35

Abstract: SD101A SD101A-TAP SD101A-TR SD101B SD101C
Contextual Info: SD101A/101B/101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC

G3VM-101BR

Abstract: MOS FET Relays Omron G3VM-101ER
Contextual Info: G3VM-101BR/ER MOS FET Relays DIP Compact, General-purpose, Analog-switching MOS FET Relays, with 2-A Switching. • Continuous load current of 2 A. Connection C : 4 A • Switches minute analog signals. G3VM-101BR/ER • Dielectric strength of 2,500 Vrms between I/O.

30a124

Contextual Info: r= 7 S G S -T H O M S O N *7 M « liüilDIgMilLiÊTnMaDÊg M 28 101B M28V 101B CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ABBREVIATED DATA • FAST ACCESS TIMES - 60ns for 101B version - 150ns for 101B version ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max

CCDVI-29DVISICA1

Contextual Info: Notes: 1. Environmental: Temp range: -20°C to +85°C 2. Electrical: Rated: 1.5A@40VAC rms Contact resistance: 20 milllohms max Insulation resistance: 1000 megohms min Dielectric withstanding voltage: 500V AC (rms) RoHS Compliant A 3. Mechanical: Mating force: 101b (4.5kg) Maximum

Contextual Info: Notes: 1. Environmental: Temp range: -20°C to +85°C 2. Electrical: Rated: 1,5A @40V AC rms Contact resistance: 20 mllllohms max Insulation resistance: 1000 megohms mln Dielectric withstanding voltage: 500V AC (rms) 3. Mechanical: Mating force: 101b (4.5kg) Maximum

Contextual Info: MCL101A / 101B / 101C VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Applications 9612315 HF-Detector

Contextual Info: SD101AWS / 101BWS / 101CWS VISHAY Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching