G101 Search Results

Contextual Info: Power LED I TECHNICAL DATA W10191, W10192 N10191, N10192 D10191, D10192 B10191, B10192 G10191, G10192 R10191, R10192 C10191, C10192 A10191, A10192 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430

W10192

Abstract: smd diode code GU SMD led warm white UV LED Seoul Semiconductor b 857 c 3281 transistor integrating sphere Rev09 W10191 ZENER 148 Datasheet
Contextual Info: Power LED I TECHNICAL DATA W10191, W10192 N10191, N10192 D10191, D10192 B10191, B10192 G10191, G10192 R10191, R10192 C10191, C10192 A10191, A10192 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430

Contextual Info: Power LED I TECHNICAL DATA W10191, W10192 N10191, N10192 B10191, B10192 G10191, G10192 R10191, R10192 C10191, C10192 A10191, A10192 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev08 – 2005/04

APD 1550 nm bare die

Abstract: EMCORE APD
Contextual Info: G1013-406, 2.5G Avalanche Photodiode APD Bare Die DATASHEET | MAY 2015 FIBER OPTICS EMCORE’s PS-G1013-406 2.5G Avalanche Photodiode (APD), Top Illuminated APD Chip is designed for GPON ONU and 2.6 Gb/s applications. It has high responsivity and low capacitance with low noise equivalent power and is ideally

PDU-G101A

Abstract: UV 310 nm
Contextual Info: UV Enhanced GaN Detectors PDU-G101A PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ TO-46 PACKAGE

uv photodiode

Abstract: ultraviolet sensor uv sensors ultraviolet sensor flame PDU-G101 360NM
Contextual Info: PHOTONIC Gallium Nitride GaN , Ultra Violet (U.V.) Photodiode Type PDU-G101 DETECTORS INC. PACKAGE DIMENSIONS inch [mm] HEADER 0.100 [2.54] PIN CIRCLE CL 0.210 [5.33] WINDOW CAP (WELDED) 0.155 [3.98] WIRE BONDS 0.055 [1.40] 45° Ø0.018 [0.46] VIEWING ANGLE 65°

Contextual Info: Power LED I TECHNICAL DATA W10191, W10192 N10191, N10192 B10191, B10192 G10191, G10192 R10191, R10192 C10191, C10192 A10191, A10192 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev09 – 2005/09

Contextual Info: Power LED I TECHNICAL DATA W10190 N10190 D10190 B10190 G10190 R10190 C10190 A10190 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev09 – 2005/09 1 SPECIFICATIONS - Features • Super high flux output and high luminance

A10192

Abstract: G10191 S10192
Contextual Info: Power LED I TECHNICAL DATA W10191, W10192 S10191, S10192 N10191, N10192 D10191, D10192 B10191, B10192 G10191, G10192 R10191, R10192 C10191, C10192 A10191, A10192 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430

TCXO-G100

Abstract: G122 TCXO G101 G102 BF-79IS sinus
Contextual Info: ROHS-Compliant Product TCXO-G1xx Series 1. Specification Type: G101 G121 Frequency range: G102 G122 5 . 35 MHz Frequency stability vs. temp. - 40°C . + 80°C: < + 2 ppm Frequency stability vs. supply changes UB ± 5 %: vs. load changes ± 5 %: < + 3 ppm

N10190

Abstract: SMD led warm white w10190 Seoul Semiconductor w10190 A10190 seoul w10190 led datasheet seoul w10190 led UV LED Seoul Semiconductor B10190 smd zener diode color code
Contextual Info: Power LED I TECHNICAL DATA W10190 N10190 D10190 B10190 G10190 R10190 C10190 A10190 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev09 – 2005/09 1 SPECIFICATIONS - Features • Super high flux output and high luminance

uv photodiode

Abstract: dosimeter PDU-G101A 365nm UV 310 nm
Contextual Info: UV Enhanced GaN Detectors PDU-G101A Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm]

Contextual Info: Power LED I TECHNICAL DATA W10190 N10190 B10190 G10190 R10190 C10190 A10190 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev08 – 2005/04 1 SPECIFICATIONS - Features • Super high flux output and high luminance

Contextual Info: Power LED I TECHNICAL DATA W10190 S10190 N10190 D10190 B10190 G10190 R10190 C10190 A10190 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev11 – 2006/08 1 SPECIFICATIONS - Features • Super high flux output and high luminance

Contextual Info: Copyrightⓒ 2003 Seoul Semiconductor Co.,Ltd. All right reserved. Power LED I TECHNICAL DATA W10191, W10192 B10191, B10192 G10191, G10192 R10191, R10192 C10191, C10192 A10191, A10192 2004.10.13 Rev 5 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea

Contextual Info: Power LED I TECHNICAL DATA W10190 N10190 D10190 B10190 G10190 R10190 C10190 A10190 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev10 – 2006/05 1 SPECIFICATIONS - Features • Super high flux output and high luminance

xg1015-SE

Abstract: XG1015-SE-0G00 XG1015-SE LNA G1015-SE XG1015-SE-0G0T XG1015 NF50 G1015S
Contextual Info: 0.1-3.5 GHz GaAs pHEMT Current Adjustable, Low Noise Amplifier G1015-SE January 2010 - Rev 06-Jan-10 Features Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure, NF < 1 dB High Linearity, OIP3 > 34 dBm @ 2 GHz

Contextual Info: PHOTONIC Gallium Nitride GaN , Ultra Violet (UVA) Photodiode Type PDU-G101A DETECTORS INC. PACKAGE DIMENSIONS inch [mm] Ø.210 [5.35] 45° 2X Ø.017 [0.43] VIEWING ANGLE 61° CHIP CL .055 [1.40] QUARTZ WINDOW CAP (WELDED) Ø.118 [3.00] HEADER .100 [2.54]

Contextual Info: UV Enhanced GaN Detectors PDU-G101A PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ TO-46 PACKAGE

Contextual Info: G10100CTFW SCHOTTKY BARRIER RECTIFIERS FEATURES • Trench Schottky technology • Low power loss, high efficiency • Low forward drop voltage • For use in low voltage, high frequency inverters, free REVERSE VOLTAGE FORWARD CURRENT – 100 Volts – 10 Amperes

Contextual Info: G10100CTW REVERSE VOLTAGE FORWARD CURRENT SCHOTTKY BARRIER RECTIFIERS FEATURES • Trench Schottky technology • Low power loss, high efficiency • Low forward drop voltage • For use in low voltage, high frequency inverters, free TO-220AB B L M C D wheeling, and polarity protection applications

S25FL256

Abstract: S25FL256SA S25FL256SAGMFI00 S25FL256SAG FL256SA fl256saif00 S25FL256S FL128S S25FL256* spansion S25FL256SAGMF
Contextual Info: S25FL128S and S25FL256S S25FL128S 128 Mbit 16 Mbyte S25FL256S 256 Mbit (32 Mbyte) MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O S25FL128S and S25FL256S Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion®

SFE10.52MJA10

Abstract: 8745H
Contextual Info: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control TDA8745 FEATURES • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 M Hz - reference oscillator 4 M H z using a crystal or 4 MHz frequency source

Contextual Info: User’s Manual V850ES/KF2 32-bit Single-Chip Microcontrollers Hardware PD70F3728 μPD70F3729 Document No. U17704EJ2V0UD00 2nd edition Date Published December 2006 N CP(K) 2005 Printed in Japan [MEMO] 2 User’s Manual U17704EJ2V0UD NOTES FOR CMOS DEVICES