200NM Search Results

S5226

Abstract: 740nm S1227 10X10 S1226 S1336 S1337 S5226-8BQ S5227 S5227-1010BQ
Contextual Info: HIGH STABILITY UV SILICON PHOTODIODES S5226, S5227 SERIES HAMAMATSU TECHNICAL DATA Low Capacitance, High Shunt Resistance and High Stability FEATURES • High UV s e n s itiv ity : 0.1 A/W A =200nm • • • • Low capacitance : 430P f } (S5226-8BQ, S5227-66BQ)

JEDEC B12-43

Abstract: b1243 E678-12A Hamamatsu Photomultiplier Socket 12 Pin B12-43 DY10 R972 Hamamatsu Photomultiplier Socket 14 Pin
Contextual Info: PHOTOMULTIPLIER TUBE R972 For VUV Detection, 19 mm 3/4 Inch Diameter, 10-stage, Head-On Type, Solar Blind Response (115 nm to 200nm) GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Useful Size Window Material

VDI 3400

Contextual Info: SEDI 770/71 CMOS LCD DRIVE • DESCRIPTION The SED1770 and the SED1771 are an analog driver forthe active matrix LCD panel and MIM liquid crystal panel. The device outputs the same voltage level as an analog signal input. The SED1770/71 feature a wide range of LCD drive voltages. These drivers use a high speed daisy-chain enable

UV diode 320 nm

Abstract: uv photodiode PDU-G102B uv photodiode wavelength 250 to 260 320nm
Contextual Info: UV Enhanced GaN Detectors PDU-G102B PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] QUARTZ WINDOW FILTER CAP WELDED Ø.118 [3.00] .055 [1.40] VIEWING ANGLE 61° CHIP ANODE 2X Ø.017 [0.43] .100 [2.54] .500 [12.70] Ø.181 [4.60] .112 [2.84] CATHODE CHIP DIMENSIONS INCH [mm]

ZE003

Abstract: nfm4516p BLM21P221 A03X BLM31P121 Ultrasonic cleaner circuit diagram BLM31P391SG NFM4516 BLM21P331SG BLM41P102SG
Contextual Info: BLM41A151S Page 1 o f 2 51 H0M E FF'roduct In fo rm a tio n j l Y e a r £00 0 F in a n c ia l I n f o m a t io n 1 A bout M u r a ta I C on tact ¡Search Engine ¡Catalog Library ¡Press Release ¡Design Support ¡Customer Support Home >Product Information >Search Engine >Catalog: BLM41A151S

ze002

Abstract: 8LM3 nfa3216 ze00203 BLM41P471 BLM31A700S BLM21P331S BLM41P750S BLM21P331SG blm murata p series
Contextual Info: BLM31A700S Page 1 o f2 |Search Engine ¡Catalog Library |Press Release ¡Design Support ¡Customer Support Home >Product Infonnation >Search Engine >Catalog: BLM31A700S Noise Suppression Products/EMIFIL > EMIFIL SMD > Inductor Type Specification Details Part Number

R7600-M64

Abstract: S10362-11-100C circuit diagram of a laser lighter
Contextual Info: NEWS 02 2008 SOLID STATE PRODUCTS PAGE 9 New Si PIN photodiodes S10783 and S10784 SOLID STATE PRODUCTS Red LED for POF Data Communications PAGE 10 ELECTRON TUBE PRODUCTS 75W Xenon Lamp Series PAGE 28 SYSTEMS PRODUCTS Cooled CCD Camera ORCA-R2 PAGE 38 Highlights

hamamatsu photomultiplier R300

Abstract: 931A Hamamatsu Hamamatsu r300 6199 photomultiplier R300 pmt hamamatsu pmt R300 RCA 931-A Photomultiplier Tube Hamamatsu photomultiplier RCA 931A photomultiplier R928, hamamatsu
Contextual Info: CHAPTER 1 INTRODUCTION 2007 HAMAMATSU PHOTONICS K. K. 2 1.1 CHAPTER 1 INTRODUCTION Overview of This Manual The following provides a brief description of each chapter in this technical manual. Chapter 1 Introduction Before starting to describe the main subjects, this chapter explains basic photometric units used to measure

Contextual Info: LT1793 Low Noise, Picoampere Bias Current, JFET Input Op Amp FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1793 achieves a new standard of excellence in noise performance for a JFET op amp. For the first time low voltage noise 6nV/√Hz is simultaneously offered with

hamamatsu c1000

Abstract: A2098 transistor a2098 A4869 A4539 C1000-12 image intensifier quantum efficiency data 40VA A3472-50 UV led 200nm
Contextual Info: HIGH-SPEED GATED IMAGE INTENSIFIER UNITS C7244, C7245 Capturing still images of high-speed phenomena! C-mount adapter is optional. The Hamamatsu C7244 and C7245 are high-speed gated image intensifier units developed specifically for imaging of highspeed phenomena occurring at low light levels. These image intensifier units consist of an image intensifier head and its controller with a built-in high voltage power supply. The image intensifier head easily connects to the front of a CCD camera to configure a high-speed shutter camera that allows capturing still images of high-speed phenomena at any desired timing. The C7244

NE531

Abstract: NE5535 na741
Contextual Info: Product specification Philips Semiconductors Linear Products High slew rate operational amplifier NE/SE531 PIN CONFIGURATIONS DESCRIPTION The 531 is a fast slewing high performance operational amplifier which retains DC performance equal to the best general purpose

VBK048

Abstract: k 2674 S29AL004D spansion top marking TS048 TRAY AL004D
Contextual Info: ���� ���� ���� ���� ����� ����� ����� ������ ������ ������ S29AL004D Floating Gate Flash Memory 4 Megabit 256 K x 16-Bit / 512 K x 8-Bit Spansion Overview

TS128MRMMC

Contextual Info: TS128MRMMC RS-MMC Description Features TS128MRMMC is a 128MB Reduced-Sized MultiMediaCard RS-MMC . It’s a highly integrated with flash memory, and is accessed via a dedicated serial interface optimized for fast and reliable data transmission. It is designed to provide an

UV-005EQ

Abstract: UV-035EQ spectrophotometer E152801 E14800 UV-001D UV-013EQ 320nm 100-EC UV-100EC
Contextual Info: UV-EQ / EQC / EK SERIES new UV Enhanced, Suppressed NIR Photodiode OSI optoelectronics introduces new family of Planar Diffused UV Enhanced Photodiode: the UV–EQ and UV–EQC Series. The new Silicon is processed for enhanced responsivity over 200-400nm and sensitivity down to 190 nm.

Contextual Info: S29AL008D 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion LLC deems the

FIL-UV50

Abstract: FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP
Contextual Info: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the

uv photodiode

Abstract: PDU-G102B 320nm
Contextual Info: UV Enhanced GaN Detectors PDU-G102B Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm]

Photocathode

Abstract: image intensifier quantum efficiency data vidicon tube proximity sensor phosphor p20 Vidicon tube datasheet V3346U intensifier hamamatsu vidicon Photocathode S-25
Contextual Info: 25mm DIA. PHOTOCATHODE PROXIMITY FOCUSED IMAGE INTENSIFIER V3346U High Image Quality, Wide Spectral Response, No Image Distortion For Scientific Applications FEATURES ● Compact and lightweight ● No image distortion ● High UV sensitivity . 60mA/W at 430nm

SSO-ADH230-T08P

Abstract: SSO-AD230-T052-NF-LC intel 845 MOTHERBOARD pcb CIRCUIT diagram MS27488-20 SSO-AD500-T052-I SSO-AD500-T052-NF SSO-AD230-T052-LC SSO-AD230-T052-NF SSO-AD500-T052-LC SSO-AD500-T052-NF-LC
Contextual Info: High Performance silicon Photodetectors by OPTRANS SeriesAD - Avalanche Photodiodes -Typical values at 22∞C Active Area VBR Part Number Size mm SSO-AD230-T052-i Ø230 SSO-AD230-T052-LC mm 2 V TC of VNR (%/∞ C) pF 0.042 160 Ø230 Id CT 0.4 0.042 160 1.5

Electrophoretic Deposition Coating

Abstract: Electrophoretic X5R 0603 activation energy ba 5996 ev 2816 ceramic capacitor footprint 0201 dimension INK JET DRIVER
Contextual Info: Thin Film MLCC Michael Randall, Dan Skamser, Tony Kinard, Javaid Qazi, Aziz Tajuddin KEMET Electronics Corporation, 201 Fairview Street Extension, Fountain Inn, SC 29644 Phone: 864-409-5611, FAX: 864-409-5642 e-mail: mikerandall@kemet.com Susan Trolier-McKinstry, Clive Randall,

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

AS29LV016

Contextual Info: CO TS PEM COTS BOO T SECT OR FLASH BOOT SECTOR Austin Semiconductor, Inc. AS29LV016 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS PERFORMANCE CHARACTERISTICS „ Commercial Off The Shelf, up-screened device

1113fb

Abstract: LT1113 LT1113ACN8 LT1113AMJ8 LT1113CN8 LT1113MJ8 servo accelerometer accelerometer b to22kHz IC OP AMP for Piezoelectric transducers
Contextual Info: LT1113 Dual Low Noise, Precision, JFET Input Op Amp U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined with low current noise and picoampere

amplify CV 203

Abstract: S1336-5BK 1N914 2N3904 LT1097 LT1792 LT1793 LT1793ACN8 servo accelerometer accelerometer b
Contextual Info: LT1793 Low Noise, Picoampere Bias Current, JFET Input Op Amp U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1793 achieves a new standard of excellence in noise performance for a JFET op amp. For the first time low voltage noise 6nV/√Hz is simultaneously offered with