S10784 Search Results

R7600-M64

Abstract: S10362-11-100C circuit diagram of a laser lighter
Contextual Info: NEWS 02 2008 SOLID STATE PRODUCTS PAGE 9 New Si PIN photodiodes S10783 and S10784 SOLID STATE PRODUCTS Red LED for POF Data Communications PAGE 10 ELECTRON TUBE PRODUCTS 75W Xenon Lamp Series PAGE 28 SYSTEMS PRODUCTS Cooled CCD Camera ORCA-R2 PAGE 38 Highlights

Contextual Info: Si PIN photodiodes S10783 S10784 High-speed detectors with plastic package The S10783 and S10784 are high-speed APC auto power control detectors developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. The S10783 is designed for surface mount and the S10784 is a plastic package with φ3 mm lens.

Contextual Info: Si PINフォトダイオード S10783 S10784 プラスチックパッケージの高速受光素子 発光波長660 nm780 nmのレーザダイオード用に開発した高速APC auto power control 用受光素子です。S10783は表面実 装型、S10784はφ3 mmレンズ付プラスチックパッケージです。

KPINA0032EC

Abstract: S10784
Contextual Info: Si PIN photodiodes S10783 S10784 High-speed detectors with plastic package The S10783 and S10784 are high-speed APC auto power control detectors developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. The S10783 is designed for surface mount and the S10784 is a plastic package with

Contextual Info: Si PIN photodiodes S10783 S10784 High-speed detectors with plastic package The S10783 and S10784 are high-speed APC auto power control detectors developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. The S10783 is designed for surface mount and the S10784 is a plastic package with

S10784

Contextual Info: Si PIN photodiodes S10783 S10784 High-speed detectors with plastic package The S10783 and S10784 are high-speed APC auto power control detectors developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. The S10783 is designed for surface mount and the S10784 is a plastic package with φ3 mm lens.

S10784

Abstract: VR25
Contextual Info: Si PINフォトダイオード S10783 S10784 プラスチックパッケージの高速受光素子 発光波長660 nm780 nmのレーザダイオード用に開発した高速APC auto power control 用受光素子です。S10783は表面実 装型、S10784はφ3 mmレンズ付プラスチックパッケージです。

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

C9750

Abstract: C10990 S11059-78HT S11154-01CT S10604
Contextual Info: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS

M3494

Abstract: SM3494
Contextual Info: r ^ 7 S G S -T H O M S O N M M L K g T M K S M 3 4 9 4 CMOS 1 6 X 8 CROSSPOINT WITH CONTROL MEMORY . LOW ON RESISTANCE typ. 60 a a t V DD = 10 V • INTERNAL CONTROL LATCHES . ANALOG SIGNAL SWING CAPABILITY EQUAL TO POWER SUPPLY VOLTAGE APPLIED ■ LESS THAN 1 % TOTAL DISTORT. AT 0 dBm

S10784

Contextual Info: 2x 6° ‘j'i-.L'CTiAi r e s p o n s i : c iia k a c t t ìh h ib : (2x)8' 4.2Max V, AVN.I-TWfl Unni I = Ratings and Characteristics: □Absolute Maximum Ratings (Ta=25°C) Parameter Reverse Voltage SymboI Value Unit VRMax 20 V Operating Temperature Topr