UPG503P Search Results

Contextual Info: SEC 9 GHz DIVIDE-BY-2 DYNAMIC PRESCALER UPG503B UPG503P ABSOLUTE MAXIMUM RATINGS FEATURES SYM BO LS • W ID E O PERATING FREQ UENC Y RANGE: fiN = 3.5 to 9.0 GHz • LOW POW ER D IS SIPA TIO N • D IV IS IO N RATIO O F 4 • GUARANTEED O PERATING TEMPERATURE RANGE:

IN4019

Abstract: PG503
Contextual Info: 9 GHz DIVIDE-BY-4 DYNAMIC PRESCALER FEATURES UPG503B UPG503P INPUT POWER vs. INPUT FREQUENCY • WIDE OPERATING FREQUENCY RANGE: fiN = 3.5 to 9 .0 GHz Ta = 25°C 1 VDD - 3 .8 V TT . V ssi= 0 V (VGG1.2 O P E N ) • DIVISION RATIO OF 4 i £ , 0 .+75°C _l \

directional coupler chip 8 GHz

Abstract: UPG503P diode 517 BF08 UPG503B
Contextual Info: NEC 9 GHz DIVIDE-BY-2 DYNAMIC PRESCALER FEATURES UPG503B UPG503P ABSOLUTE MAXIMUM RATINGS Ta- 25°q SYM BO LS • WIDE OPERATING FR EQ U EN C Y RANGE: fiN = 3.5 to 9.0 GHz V dd • LOW POW ER DISSIPATION VSS2 P in • DIVISION RATIO O F 4 Pt • GUARANTEED OPERATING TEM PERATURE RANGE:

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic

NEC Ga FET marking L

Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
Contextual Info: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima

prescaler 120 ghz

Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V