2SK281
Abstract: 203l2 NE218 NE21889 NE21800
Contextual Info: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure
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lj457414ne21800ne21889ne218+22sk281203l2
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nec VARIABLE CAPACITANCE DIODE
Abstract: ND6361-3A ND6361-3D diode 3D
Contextual Info: NEC/ CALIFORNIA 1SE D NEC L427414 GOQnSb T ND6361-3A ND6361-3D C-BAND SILICON PIN DIODE OUTLINE DIMENSIONS FEATURES Units in aim OUTLINE 3A* • LOW DISTORTION: (IMs = 75 dB) • WIDE RF RESISTANCE RANGE: (30 dB) 4.0 MIN. • p 4.0 MIN. • P TYPE BASE - /¿ =L
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l427414nd6361-3and6361-3dwd6361+4b4s7414nd6361nec variable capacitance diodediode 3d
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UPC1678B
Abstract: UPC1678
Contextual Info: N E C / C A L IF O R N IA 5bE D L427414 000Eb5cJ 5bl H N E C C NEC UPC1678B UPC1678G UPC1678P 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER ; " T - iq - r 3 , - o i FEATURES UPC1678B/P INSERTION GAIN vs. FREQUENCY • HIGH OUTPUT POWER: +18 dBm Vcc = 5 V
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l427414000eb5cupc1678bupc1678g+4upc1678pupc1678b/pupc1678upc08
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NE21936
Abstract: NE21935 equivalent 2SC2367 NE219 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174
Contextual Info: NE C/ CALI FORNI A 1SE D NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES / • LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ' NE219 SERIES The NE219 series of NPN silicon bipolar transistors is de signed for small signal amplifier and oscillator applications up
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qg013t3r-31-ne219ne21936+8ne21935 equivalent2sc2367ne219002sc2869nec 2sc2218ne21903ne219372sc22174
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1SS14
Abstract: 1SS156 1SS12 ND4131-5T ND4141 CP 022 ND ND4000 nd4132 743e 1SS15
Contextual Info: N E C / 15E D CALIFORNIA NEC • T -c rj~ ò 1 b45743i4 0001137 b SILICON SCHOTTKY MIXER/DETECTOR DIODE ND4000 SERIES ABSOLl TE MAXIMUM RATINGS FEATURES SYMBOLS • LOW MEDIUM BARRIERS Pt • PASSIVATED CONSTRUCTION • HIGH RELIABILITY Top Tj T sdr DESCRIPTION AND APPLICATIONS
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fci427414nd4000nd41s1nd4151+9nd41321ss141ss1561ss12nd4131-5tnd4141cp 022 nd743e1ss15
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NE25337
Abstract: KR sot-143 NE25339 marking X_j sot u79 018
Contextual Info: N E C / NEC L4574m 1SE D CALIFORNIA DGOlbSÔ 5 GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25337 NE25339 OUTLINE DIMENSIONS umtsmmm O U T LIN E 37 • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW C r s s : 0.02 pF (TYP) • HIGH Gps : 20 dB (TYP)
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ne25337ne25339ne253b4e7414+4rn/50kr sot-143marking x_j sotu79 018
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NE99532
Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
Contextual Info: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de
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ne856ne99532ne32700ne32702+12ne32708ne32740ane32740b2sc3358ne3005b20ne85637ne4201ne1010e2sc3358 transistorne3005b-20ne1005enec 8563
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881-1 nec
Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
Contextual Info: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S
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b4s7414g001s37ne345ne3451600+12ofsioz/sins72s22-s21s12ne345100881-1 necne345l-20bnes1417-20bcd 17821la 7687 asit 16250ne72084nes1417-10bnes1723-20b
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NE02136
Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
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b427414000137sne0213l-17+10ne021362sc2570ne02135 equivalent2sc2570 transistorne02103k4272sc15602sc2351 equivalentlm5741ghz micro-x package
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2SC2340
Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Contextual Info: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers
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l427414r-33-0sne568ne56800+9operate-692sc2340mr 6500bm742sc2339ne56803ne56853ne56854ne56857
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2SC3584
Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583
Contextual Info: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for
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oog144sne68100ne68132ne68133+11ne68135ne68137ne6812sc3584ne3813sc35810r 236ne and "micro-xel30252sc35822sc3583
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2SC2407
Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
Contextual Info: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli
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l4h7414ne416t-33-2sc2407+9nec 2561 equivalent2sc1255ne416072sc1949ne41632bnc921ne416352sc2407 equivalent2sc1592
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2SC1593
Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
Contextual Info: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is
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b427414ne64300ne64310ne64320+7ne6432sc15932sc1041ge-64nec k 2134 transistorv020transistor bu 189
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2SC2340
Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e
Contextual Info: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers
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l427414r-33-0sne568ne56800+82sc2340transistor bj 102 1312sc2339ne56803ne56853ne56857ne56887ne56853e
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