NE41635
Contextual Info: NE41635 NPN SILICON RF MEDIUM POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .100 4L The ASI NE41635 is Designed for Oscillator and Amplifier Applications up to 2.0 GHz. FEATURES INCLUDE: • Emitter Ballast Resistors • Low Noise MAXIMUM RATINGS IC 100 mA VCBO
|
Original
|
ne41635s21e2 |
PDF
|
Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
|
OCR Scan
|
2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp
|
PDF
|
SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
|
OCR Scan
|
an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
|
PDF
|
MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
|
OCR Scan
|
1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
|
PDF
|
73412
Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7
|
OCR Scan
|
ne46134ne85634ne46734ne85619+11ne6811973412ne64535chip transistor 348fvh 38p08cne68039ne889ne02135ne64500ne24318
|
PDF
|
NE88933
Abstract: ne85639 NFC46 NE57835 NE645 NE21935 NE64535 NE68033 NE68035 NE68039
Contextual Info: N E C / SbE CALIFORNIA D • t.427414 ODGEflMB Tbb HNECC RF and DC Specifications Low Noise Devices a lllfj |3^ 1* #1 f II itti ft* iltasfc-S SSmiJe iSÉ-asfcl | | i | | | I in a»iiSr# *W =BP*>8 AiS SiiSf*K f a ll * t i l l MAG ' CL Ic f SÈI««nW_e «gÿwfflHfea®»la V (mA) (GH/)
|
OCR Scan
|
ne21935ne645ne64535nh680+13nl68030ne416ne41635ne461ne46134ne46734ne88933ne85639nfc46ne57835ne68033ne68035ne68039
|
PDF
|
NE41607
Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128
Contextual Info: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e
|
OCR Scan
|
b427mmne416ne41635de161+8ne41607nc921z171ne416002sc202550m1nne41615z128
|
PDF
|
2SC2407
Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
Contextual Info: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli
|
OCR Scan
|
l4h7414ne416t-33-2sc2407+9nec 2561 equivalent2sc1255ne416072sc1949ne41632bnc921ne416352sc2407 equivalent2sc1592
|
PDF
|
2SC2407 equivalent
Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
Contextual Info: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The
|
OCR Scan
|
l4h7414ne416for232sc2407 equivalent+92sc2407nc921nec 2561 equivalent2sc1592ne416072sc19492sc1426 equivalentnec 2561 lene41600
|
PDF
|
cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
|
Original
|
68b09sn74als04bnsn74als08nsn74als00an+16ca3046ua733lm311plm318ca309478h05cp4071data sheet ic 74082n4891ic 7408mda970a2mda25001854-0071mda25022n4342ic ttl 7400
|
PDF
|
NE56755
Abstract: BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5
|
Original
|
bfq73sbfr96at41435-5at420s5+16at414s5at41435-3at41470at41410ne9s203ne9s20sne56755bfr96shxtr4105lt3203hxtr3615ne21960j200avantek sma421412sc240s
|
PDF
|
Transistor CD 7810
Abstract: transistor c 5855 NE41600 cy 1815
Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES_ • LOW NOISE FIGURE: 1 dB at 7 0 M H z • HIGH RELIABILITY METALLIZATION • LINEAR POWER OUTPUT: 200 mW at 2 G H z • LOW COST DESCRIPTION_ T h e N E 4 1 6 s e rie s of N P N tra n s is to rs is o n e of N E C 's m ost
|
OCR Scan
|
ne416transistor cd 7810transistor c 5855ne41600+1cy 1815
|
PDF
|
BF907
Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5
|
Original
|
bfq73sbfr96at41435-5at420s5+16at414s5at41435-3at41470at41410ne9s203ne9s20sbf907bf900bf910bf914bf479ssiemensbf479tne56755bf540bfq14
|
PDF
|
NE41612
Abstract: NE41600 9904 112 2810 Itt 5408 9915 H 3 37 07
Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES_ . LOW NOISE FIGURE: 1 dB at 7 0 M H z • HIGH RELIABILITY METALLIZATION • LINEAR POWER OUTPUT: 2 0 0 mW at 2 G H z • LOW COST DESCRIPTION _ duced, using the latest techniques and production controls
|
OCR Scan
|
ne416ne41612ne416009904 112 2810+2itt 54089915 h 3 37 07
|
PDF
|
|
|
NC921
Abstract: ne41635 NE41607 NE41612-1
Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES_ • LOW NOISE FIGURE: 1 dB at 70 MHz linearity. The NE416 series is available in a wide selection of package styles and in chip form for thin and thick film circuits. Most package styles are available with screening levels through
|
OCR Scan
|
ne416nc921ne41635ne41607+1ne41612-1
|
PDF
|
