2SC2071
Abstract: 2SC2025 2SA934 2SA939 2SC2053 2sc207827mhz 2SC2023 2SC2026 2SC2055 2sc2065
Contextual Info: - 114 - Ta=25'C, *EP(äTc=25‘C M & fx £ W ÌÉ VcBO (V) 2SC2001 2SC2002 2SC2003 2SC2021 ocr“>noii tOUiUi ILllIM 2SC2021H 2SC2021MLN 2SC2022 2SC2023 2SC2024 2SC2025 2SC2026 2SC2027 2SC2053 2SC2055 2SC2056 2SC2058 2SC2058S 2SC2059K 2SC2060 2SC2061 2SC2062
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2sc20012sc20022sc20032sc2021+162sc2021m2sc2021mln500mhz2sc20s5o-202mod2sc20682sc20712sc20252sa9342sa9392sc20532sc207827mhz2sc20232sc20262sc20552sc2065
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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NE41607
Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128
Contextual Info: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e
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b427mmne416ne41635de161+8ne41607nc921z171ne416002sc202550m1nne41615z128
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2SC2407
Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
Contextual Info: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli
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l4h7414ne416t-33-2sc2407+9nec 2561 equivalent2sc1255ne416072sc1949ne41632bnc921ne416352sc2407 equivalent2sc1592
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2SC2407 equivalent
Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
Contextual Info: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The
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l4h7414ne416for232sc2407 equivalent+92sc2407nc921nec 2561 equivalent2sc1592ne416072sc19492sc1426 equivalentnec 2561 lene41600
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NE41612
Abstract: NE41600 9904 112 2810 Itt 5408 9915 H 3 37 07
Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES_ . LOW NOISE FIGURE: 1 dB at 7 0 M H z • HIGH RELIABILITY METALLIZATION • LINEAR POWER OUTPUT: 2 0 0 mW at 2 G H z • LOW COST DESCRIPTION _ duced, using the latest techniques and production controls
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ne416ne41612ne416009904 112 2810+2itt 54089915 h 3 37 07
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2SC2016
Abstract: SEIKO MS621 SR927W IL37N SR626SW MS621 FL11N FL28N SR421SW SL920 SR416SW
Contextual Info: Micro Batteries Product Catalog Components Headquaters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module GENERAL DESCRIPTION FEATURES Seiko Instruments Inc. has commercialized a highly reliable silver oxide battery in response to quartz watches.
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1-9807-020-ms/ac2sc2016seiko ms621sr927w+7il37nsr626swms621 fl11nfl28nsr421swsl920sr416sw
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NC921
Abstract: ne41635 NE41607 NE41612-1
Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES_ • LOW NOISE FIGURE: 1 dB at 70 MHz linearity. The NE416 series is available in a wide selection of package styles and in chip form for thin and thick film circuits. Most package styles are available with screening levels through
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