NE57835 Search Results

Contextual Info: NPN SILICON MICROWAVE TRANSISTOR FEATURES • H IG H G A IN B A N D W ID T H P R O D U C T : f r - 6 G H z NE57800 NE57835 GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. COLLECTOR CURRENT • L O W N O IS E F IG U R E : 2 .5 d B at 2 G H z X CD • H IG H G A IN : 13 d B at 2 G H z

2SC2150

Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Contextual Info: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use

Contextual Info: NPN SILICON MICROWAVE TRANSISTOR NE57800 NE57835 GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 6 GHz • LOW NOISE FIGURE: 2.5 dB at 2 GHz • HIGH GAIN: 13 dB at 2 GHz 10 . RELIABILITY PROVEN IN SPACE:

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7

NE88933

Abstract: ne85639 NFC46 NE57835 NE645 NE21935 NE64535 NE68033 NE68035 NE68039
Contextual Info: N E C / SbE CALIFORNIA D • t.427414 ODGEflMB Tbb HNECC RF and DC Specifications Low Noise Devices a lllfj |3^ 1* #1 f II itti ft* iltasfc-S SSmiJe iSÉ-asfcl | | i | | | I in a»iiSr# *W =BP*>8 AiS SiiSf*K f a ll * t i l l MAG ' CL Ic f SÈI««nW_e «gÿwfflHfea®»la V (mA) (GH/)

2SC2150

Contextual Info: NPN SILICON MICROWAVE TRANSISTOR NE57800 NÉ57835 GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 6 GHz 20 • LOW NOISE FIGURE: 2.5 dB at 2 GHz • HIGH GAIN: 13 dB at 2 GHz 10 • RELIABILITY PROVEN IN SPACE:

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC