881-1 nec
Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
Contextual Info: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S
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b4s7414g001s37ne345ne3451600+12ofsioz/sins72s22-s21s12ne345100881-1 necne345l-20bnes1417-20bcd 17821la 7687 asit 16250ne72084nes1417-10bnes1723-20b
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2SC1600
Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
Contextual Info: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is
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b4s7414ne57500ne57510ne57520+7ne5752sc16002sc10422sc1642321es21e2sc164
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1S1855
Abstract: NEC 1s1855 1S1857 1S1856 ND1551-7F snap-off diode ND1571-5F diode 5f DIODE E 7F ND1561-5F
Contextual Info: NE C/ 1SE D CALIFORNIA NEC b4S7414 0001*134 T 'O l - i £ ND1551-7F ND1561-5F ND1571-5F SILICON SNAP-OFF DIODE OUTLINE DIMENSIONS FEATURES Units in mm • U LTR A S H O R T R EV ER S E TU R N O N T IM E OUTLINE 5F • H IG H R E L IA B IL IT Y • LO W C O S T
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b427414nd1551-7fnd1561-5fnd1571-5f+8nd15511s1855nec 1s18551s18571s1856snap-off diodediode 5fdiode e 7f
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PD1712
Abstract: NEC SIP 8pin JPB568G UPB568HA P8HA-254B
Contextual Info: N E C / C A LIFO R N IA 30E D bMa7Mm 0002114 a h n e c c .- T W S - 1 9 - / 3 1 GHz DIVIDE-BY-128/136 LOW POWER PRESCALER The ¿¿PB568C, the /¿PB568HA and the jjPB568G UPB568, UPB568HA are tw o-m odulus prescaleres fo r T V , C A T V and V T R , w h ich
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bm27mmdivide-by-128/136upb568upb568ha+10ipb568cpb568hajjpb568gjjpd1700/jpd1709pd1711pd1712nec sip 8pinjpb568gp8ha-254b
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Microwave PIN diode
Abstract: 1SV36 ND6000 8542A N0627 1SV37 ND6361-3F ND6371-5E d6471
Contextual Info: N E C / 1SE D CALIFORNIA NEC H T-07-IS fc.427414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS qa - 25°o • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261, 71, 81, ND6361, 71 ND6461, 71
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b4e7m14nd6000nd6261nd6361+12nd6461nd6481nd665171r81microwave pin diode1sv368542an06271sv37nd6361-3fnd6371-5ed6471
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NE21936
Abstract: NE21935 equivalent 2SC2367 NE219 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174
Contextual Info: NE C/ CALI FORNI A 1SE D NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES / • LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ' NE219 SERIES The NE219 series of NPN silicon bipolar transistors is de signed for small signal amplifier and oscillator applications up
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qg013t3r-31-ne219ne21936+8ne21935 equivalent2sc2367ne219002sc2869nec 2sc2218ne21903ne219372sc22174
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2SC1253
Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
Contextual Info: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for
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ms7414ne74000ne74014ne74020+7ne740e901152sc125792sc1253e74020vhf power transistor pnp to-39transistor 2sc 733
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1SS14
Abstract: 1SS156 1SS12 ND4131-5T ND4141 CP 022 ND ND4000 nd4132 743e 1SS15
Contextual Info: N E C / 15E D CALIFORNIA NEC • T -c rj~ ò 1 b45743i4 0001137 b SILICON SCHOTTKY MIXER/DETECTOR DIODE ND4000 SERIES ABSOLl TE MAXIMUM RATINGS FEATURES SYMBOLS • LOW MEDIUM BARRIERS Pt • PASSIVATED CONSTRUCTION • HIGH RELIABILITY Top Tj T sdr DESCRIPTION AND APPLICATIONS
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fci427414nd4000nd41s1nd4151+9nd41321ss141ss1561ss12nd4131-5tnd4141cp 022 nd743e1ss15
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2SC1594
Abstract: NE77320 33B5 NE77300 NE77310 NE77320T S21E S22E J25-26 1400 88 pm
Contextual Info: N E C / CALIFORNIA b42741M 1SE D 0 0 0 1 3 LjE 3 NE77300 NE77310 NE77320 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 2 WATTS POWER OUTPUT CLASS C AT 2 GHz The NE773 series of NPN medium power silicon transistors Is especially designed for broadband VHF and UHF amplifiers
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b42741m00013ljene77300ne77310+10ne77320ne773stud-strlpline552sc159433b5ne77320ts21es22ej25-261400 88 pm
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20PM4
Abstract: NE985100 NE985200 NE985400
Contextual Info: N E C / CALIFORNIA NEC 15E D b427414 DOOlSb? T NE985 SERIES K-BAND POWER G aAs MESFET OUTLINE DIMENSIONS FEATURES NE985100 CHIP • CLASS A OPERATION 40 • HIGH OUTPUT POWER • HIGH LINEAR GAIN • HIGH POWER ADDED EFFICIENCY • HIG H RELIABILITY NE985200 (CHIP)
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NE1069L-4B
Abstract: NE710
Contextual Info: NEC/ CALIFORNIA t4S741M 1SE D NEC r-37'?0 00DlSb3 2 4W, L-S BAND POWER GaAs MESFET NE1069L-4B OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OPERATION OUTLINE T-38 • HIGH POWER OUTPUT • HIGH GAIN • HIGH POWER ADDED EFFICIENCY • HIGH RELIABILITY
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NE202 circuit
Abstract: NE202 NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574
Contextual Info: L NEC N E C / 1SE D CALIFORNIA • b427414 OQOISÌO T'3l -¿S' S ULTRA LOW NOISE K-BAND HETERO JUNCTION FET NE202 SERIES OUTLINE DIMENSIONS FEATURES • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4) 1.8 dB TYP at f = 18 GHz (NE20248)
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2sc2065
Abstract: Low Distortion Amplifiers ne22 TRANSISTOR ne22 NE22100 NE22120 S21E NE221
Contextual Info: N E C / 1SE D CALIFORNIA NEC • V b 4a ?414 O D D i a a ? 4 NPN MEDIUM POWER UHF-VHF TRANSISTOR NE22100 NE22120 ABSOLUTE MAXIMUM RATINGS FEATURES SYMBOLS • ULTR A-LINEAR B R O A D -B A N D A M P L IF IE R • LO W D IS T O R T IO N A T H IG H PO W E R PERFORMANCE SPECIFICATIONS
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ne22100ne22120ne221100ma---+52sc2065low distortion amplifiersne22transistor ne22s21e
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NE02136
Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
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b427414000137sne0213l-17+10ne021362sc2570ne02135 equivalent2sc2570 transistorne02103k4272sc15602sc2351 equivalentlm5741ghz micro-x package
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NE76084
Abstract: NE760 NE76000 NE76083A S221 y427
Contextual Info: N E C / CALIFORNIA 1SE D NEC □4S7414 G D O l t m LOW NOISE Ku-K BAND G aAs MESFET 7 - r - 3 h 4 S NE760 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz The NE76000 provides a low noise figure and high associated
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Microwave PIN diode
Abstract: N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a
Contextual Info: 'T - O l- lS N E C / 1SE CALIFORNIA NEC D H b457414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261,71, 81, ND6361, 71 ND6461, 71 ND6481, ND6651. 61
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fa4274mnd6000t-07-/snd6261+14nd6361nd6461nd6481nd6651microwave pin dioden06271sv858542a1sv36nd6361-3fnd6371-5et07 marking1sv26marking 8542a
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impatt diode
Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
Contextual Info: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz
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NE32000
Abstract: NE32084 NE32083A
Contextual Info: E C/ C A L I F O R N I A NEC 1SE D b42?m4 OQOlbOS r - 3 / - 2 S' 3 NE32000 NE32083A NE32084 LOW COST/LOW NOISE K-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES NE32000 CHIP • LOW NOISE FIGURE 1.2 dB TYP at f = 12 GHz (NE32083A) 1.3 dB TYP at f = 12 GHz (NE32084)
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2SC1593
Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
Contextual Info: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is
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b427414ne64300ne64310ne64320+7ne6432sc15932sc1041ge-64nec k 2134 transistorv020transistor bu 189
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PB552C
Abstract: UPB552C uPB552 pb552
Contextual Info: NEC/ 3GE CALIFORNIA 3> fcjM274m 0002072 T «NECC T -* /s r-/9 -IZ LOW VOLTAGE, LOW POWER TWO-MODULUS PRESCALER C UPB552C DESCRIPTIO N The {¿PB552C is a V H F two-modulus prescaler intended for use in P L L digital tuning systems. Advanced bipolar process technology is utilized to realize high frequency operation with extremely low power
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bm274mq0qsd75upb552cpb552c+334-8393/faxupb552pb552
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2SA1424
Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
Contextual Info: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and
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b427414ne88900ne88912ne88933+8ne88935ne327ne8892sa14242sa1228g503ne and micro-x2sa1223
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8542A
Abstract: ND6281-3A ND6281-3D E 3A diode nec x-band diode 3D
Contextual Info: N E C / 1SE CALIFORNIA NEC D bM27Mm G O O nSB M ND6281-3A ND6281-3D X-BAND SILICON PIN DIODE FEATURES OUTLINE DIMENSIONS Units In mm OUTLINE 3A* • L O W D RIVING P O W E R • W ID E R F R E S IS T A N C E R A N G E 4.0 MIN.I. —— • LOW C O S T j?—
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nd6281-3and6281-3d-j2508542a+3e 3a diodenec x-banddiode 3d
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230Z
Abstract: V3301 NEL230253 L230C NEL2300 NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111
Contextual Info: NE C/ CALIFORNIA NEC 1SE D h 427 414 00 01 275 Ö T- 33-0? NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS çta = 2 5 °g RATINGS • HIGH GAIN: G mb = 6.5 dB
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h427414t-33-t-nel2300emitterj17+12bhs7414v3301-r-33nel230353230znel230253l230cnel2301nel2302nel23032sg 111transistor 2sg 111
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