8542A
Abstract: ND6281-3A ND6281-3D E 3A diode nec x-band diode 3D
Contextual Info: N E C / 1SE CALIFORNIA NEC D bM27Mm G O O nSB M ND6281-3A ND6281-3D X-BAND SILICON PIN DIODE FEATURES OUTLINE DIMENSIONS Units In mm OUTLINE 3A* • L O W D RIVING P O W E R • W ID E R F R E S IS T A N C E R A N G E 4.0 MIN.I. —— • LOW C O S T j?—
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nd6281-3and6281-3d-j2508542a+3e 3a diodenec x-banddiode 3d
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of all 74 ic series
Abstract: 2SC3140 2SC3139 NEL080525-28 NEL0800 NEL080120-28 NEL080220-28 J279 J430 j6925
Contextual Info: N E C / CALIFORNIA NEC SbE 3> • b457Mm Q0QES43 213 *NECC NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATING S FEATURES SYM BOLS • H IGH LIN EA R P O W E R PARAM ETERS Ta = 25°C UNITS R A TIN G S
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q0qes43nel080120-28nel080220-28nel080525-28+12nel0801nel0802nel0805nel0800to1000bms74mof all 74 ic series2sc31402sc3139j279j430j6925
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2SA711
Abstract: NE66912 TIS90 2SA711(KE) NE71100 NE71111 S21E NE711 08/bup 3110 transistor
Contextual Info: NEC/ CALIFORNIA b4 2?m M QDQ2M55 QS4 HINECC 5bE D T -3 \-n SEC PNP SILICON HIGH SPEED SWITCHING TRANSISTOR NE71100 NE71111 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G AIN B A NDW IDTH P R O D U C T fr = 1.0 GHz The NE711 series of PNP silicon transistors is designed for HF
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b427mmqdq2m55ne71100ne71111+7ne7112sa711ne66912tis902sa711(kes21e08/bup 3110 transistor
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2SC2570
Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Contextual Info: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
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bm27414qddb354t3v-23ne021+102sc25702sc2570 transistortransistor 2sc2570ne02103ne021332sc1560ic 2sc2570ne02132ne02100ne02135
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2SA1424
Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
Contextual Info: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and
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b427414ne88900ne88912ne88933+8ne88935ne327ne8892sa14242sa1228g503ne and micro-x2sa1223
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