2SC2570
Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Contextual Info: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
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bm27414qddb354t3v-23ne021+102sc25702sc2570 transistortransistor 2sc2570ne02103ne021332sc1560ic 2sc2570ne02132ne02100ne02135
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NE050290-07
Abstract: ne050391-12 DDD2224 NE050220-07 NE050291-07 NE050490-07 NE050491-07 NE050690-07 NE050691-07 NEM054029-12
Contextual Info: E C/ CALIFORNIA 47E » • bM27414 DDDE224 blT « N E C C UHF DEVICES: 450 MHz TO 700 MHz PART NUMBER PACKAGE STYLE FREQUENCY SUPPLY CLASS RANGE OF VOLT. GHz OPER. (V) TYP. TYP. P out P out (dBm) (W) 38.6 7.2 8.6 70.0 .500 NO 38.5 7.1 4.0 80.0 .500 NO 38.5
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bm27414ddd2224ne050725-10ne050691-07+9ne050690-07ne050490-07ne050491-07ne050291-07ne050290-07ne052025-28ne050391-12ne050220-07nem054029-12
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of all 74 ic series
Abstract: 2SC3140 2SC3139 NEL080525-28 NEL0800 NEL080120-28 NEL080220-28 J279 J430 j6925
Contextual Info: N E C / CALIFORNIA NEC SbE 3> • b457Mm Q0QES43 213 *NECC NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATING S FEATURES SYM BOLS • H IGH LIN EA R P O W E R PARAM ETERS Ta = 25°C UNITS R A TIN G S
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q0qes43nel080120-28nel080220-28nel080525-28+12nel0801nel0802nel0805nel0800to1000bms74mof all 74 ic series2sc31402sc3139j279j430j6925
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2SK571
Abstract: ne72089 ne72084 NE72000 NE72089A 2SK354A 2SK571 equivalent 2SK57-1 NE720 NE7200
Contextual Info: NEC/ bM274m SbE D CALIFORNIA NEC OQOaa^D 3*^7 BINEC C T - 3 ,\- z £ GENERAL PURPOSE G aAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LO W C O S T Units in mm NE72000 (CHIP) (Units In pm) • LO W N O IS E PIQURE 100- • 0.8 dB at 4 GHz 1.7 dB at 8 GHz
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bm274m0q022tdne720ne72000+8ne72084ne72089a2sk571ne720892sk354a2sk571 equivalent2sk57-1ne7200
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NE24600
Abstract: NE24620 2SC2952 2SC2953 NE24615
Contextual Info: SEC N E C / CALIFORNIA SbE D Li4274m 00G237S Tbl « N E C C " 1 7 3 5 -0 5 NE24600 NE24615 NE24620 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • E X C E L L E N T IM DISTO RTIO N C H A R A C T E R IS T IC S A T HIG H O U T P U T LEV E LS :
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tj4s74m00g237sne24600ne24615+5ne24620ne246preve352sc29522sc2953
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NE64800
Contextual Info: NEC/ CALIFORNIA NEC SbE D b4S74m 0D02433 4^3 K-BAND BIPOLAR OSCILLATOR TRANSISTOR • NE64800 OUTLINE DIMENSIONS FEATURES NECC Units in jjm NE64800 (CHIP) • FUNDAMENTAL OSCILLATIO N GREATER THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER M IL-SPEC TEMP RANGES
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