2SC1365
Abstract: 2SC1252 NE741 NE74113 2SC*1365 NE74100 NE74114
Contextual Info: N E C / C A L IF O R N I A Sb E NEC D b4S74m ÜGQ547Ö b S l H N E C C NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR T *^ "3 > -0 £ > OUTLINE DIMENSIONS FEATURES Unita In mm NE74100 (CHIP) • H IG H GAIN BAN DW IDTH P R O D U C T : fr = 1.7 GHz
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b4274m0g0547ne74100ne74113+5ne74114ne7412sc13652sc12522sc*1365
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NE64800
Contextual Info: NEC/ CALIFORNIA NEC SbE D b4S74m 0D02433 4^3 K-BAND BIPOLAR OSCILLATOR TRANSISTOR • NE64800 OUTLINE DIMENSIONS FEATURES NECC Units in jjm NE64800 (CHIP) • FUNDAMENTAL OSCILLATIO N GREATER THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER M IL-SPEC TEMP RANGES
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2SC2150
Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Contextual Info: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use
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bm27m14qqqe40bne57800ne57807+7ne57835ne5782sc2150ne578 nec2sc215ne and micro-xtransistor nec ka 42
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2SC4087
Abstract: 2SC4090 NE73439 NE73439B
Contextual Info: NEC/ 5bE D CALIFORNIA NEC b427414 00024btì b4T • N E C C T - 'S l- is NPN SILICO N GENERAL PU RPO SE TRANSISTO R NE73439 NE73439B OUTLINE DIMENSIONS FEATURES • H IG H G A IN BA N D W ID T H P R O D U C T : Units in mm OUTLINE 39 (SOT-143) 2.0 GHz (TYP)
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b457414ne73439ne73439b2sc4087+12sc4090
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