J279 Search Results

Penetrox A Electric Joint Compound

Abstract: Penetrox E Electric Joint Compound u1011 Burndy Y35 hypress burndy YGIB Bus Bar torque for metric bolts UL467 YGHC29C29 PIBEAMKIT burndy Y750
Contextual Info: BURNDY Grounding TABLE OF CONTENTS HYGROUND IRREVERSIBLE COMPRESSION GROUNDING AND INSTALLATION TOOLING HYGROUND™ Features and Benefits .D-3 - D-4 Type YGIB .D-18 - D-19 Type YGL-C .D-5

Vantis ISP cable

Abstract: CMB2102 EPF10K Tektronix 2224
Contextual Info: MMCCMB2102 Controller and Memory Board CMB2102 User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described

ICP N20 T

Abstract: DCS-1800 LMX2335L LMX2336 LMX2336L RCR-27 LMX2335LTM LMX2336LTM
Contextual Info: February 2001 LMX2335L/LMX2336L PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications LMX2335L LMX2336L 1.1 GHz/1.1 GHz 2.0 GHz/1.1 GHz Features General Description The LMX2335L and LMX2336L are monolithic, integrated dual frequency synthesizers, including two high frequency

2SJ235

Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow

2SK1778

Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK1778

Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m

HB 273

Abstract: cap code m472
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

C0402

Abstract: C0805 C0805C103K5RAC C1210 C1812 C1825 C2220 EIA481-1 IEC60286-6 IEC-286-6
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

J4-81

Contextual Info: MMCFPGA1200UM/D Rev 1 JANUARY 1999 MMCFPGA1200 FIELD PROGRAMMABLE GATE ARRAY I/O PERIPHERAL BOARD FPGA IPB USER’S MANUAL MOTOROLA Inc., 1998, 1999; All Rights Reserved Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. Motorola does not

29023

Contextual Info: in te i 27960CX PIPELINED BURST ACCESS 1M 128K x 8 CHMOS EPROM • S yn ch ro n o u s 4 B yte D a ta B u rst A c c e s s ■ ■ No G lue In te rfa c e to 8 0 96 0C A ■ High P e rfo rm a n c e C lo ck to D ata O u t — Z e ro W ait S ta te D a ta to D ata B u rst

Vantis ISP cable

Abstract: CMB2102 Tektronix 2224 J146 ptc Date Code Formats Altera EPF10K ipass connector EPF10K J189 J4-81 J499
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MMCCMB2102 Controller and Memory Board CMB2102 User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described

Contextual Info: SIDE ENTRY MODULAR PCB JACK DEC TYPE 6P PROFILE=16.00MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc

Contextual Info: LMX2335L,LMX2336L LMX2335L/LMX2336L LMX2335L - 1.1 GHz/1.1 GHz LMX2336L, 2.0 GHz/1.1 GHzPLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications Literature Number: SNAS112C October 19, 2011 LMX2335L/LMX2336L LMX2335L 1.1 GHz/1.1 GHz LMX2336L

2sk1299

Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
Contextual Info: 29 HITACHI 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m

2sj177

Abstract: 2sk1778 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SK97-2 2sk1301 2sj175
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be

burndy Y750

Abstract: burndy Y35 Burndy Y35 hypress IEEE-837 burndy* YA Lug Burndy burndy Y39 STR 5634 kpb 1313 B455 E20
Contextual Info: BURNDY Grounding TABLE OF CONTENTS HYGROUND® IRREVERSIBLE COMPRESSION GROUNDING AND INSTALLATION TOOLING ® HYGROUND Features Type YGIB . . . . . . . . . . E-20 - E-21 and Benefits . . . . . . . . . E-5 - E-6 E-1 Type YGL-C . . . . . . . . . . . . . . . . E-7

Burndy PAT750-18V parts breakdown

Abstract: BURN GI CONDUIT lp 1610 for door bell Burndy Y35 hypress parts breakdown ci an 7591 NEC c317 KPC 45 94V SAE-AS7928 burndy Y35 Hypress owner manual burndy patriot pat750-18v replacement parts
Contextual Info: Master Catalog Solutions for the Electrical Industry Experience. Technology. Answers. TM Customer Service Department 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 1-603-647-5299 International Canada 1-800-361-6975 (Quebec) 1-800-387-6487 (All other provinces)

J279

Abstract: 2SJ279L Hitachi 2SJ 2SJ279S
Contextual Info: J279C , J279 Silicon P Channel MOS FET Application DPAK-1 High speed power switching 4 i Features • • • • Low on-resistance H igh speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC

BB 139 variable cap

Abstract: C1825 EIA481-1 IEC60286-6 C0402 C0805 C0805C103K5RAC C1206 C1210 C1812
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

29023

Contextual Info: ln¥ I A E W M 1 ! DMIF@®IM]ATrO@M 27960CX PIPELINED BURST ACCESS 1M 128K x 8 EPROM Synchronous 4 Byte Data Burst Access Pipelined Addressing for Optimal Bus Bandwidth on 80960CA — Next Addressing Overlaps Last Data Byte No Glue Interface to 80960CA

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

amd athlon 64 socket 939

Abstract: k A1659A LSI 53C710 1FT1-0002 PA-7200 intel 8042 RTL8150 MPC6041 3050RX PA-8900
Contextual Info: The OpenPA Project First Edition Paul Weissmann Berlin Preface This is the dead-tree, made-for-printing edition of The OpenPA Project openpa.net . The content is based on the online version’s content from mid-June 2006, parts and pieces were removed and modified

LQFP "100 pin" PACKAGE

Abstract: BRQ microcontroller MB91101A MB91F109 FR30 LQFP-100 MB91101 MB91106 MB91126 J137
Contextual Info: FR30 Evaluation Board User’s Guide Rev 1.0 Fujitsu Microelectronics America, Inc Vers. 1.0 Fujitsu Microelectronics America, Inc 1 Revision History Revision # Date 1.0 05/01/2003 Fujitsu Microelectronics America, Inc Comments Draft Revision 2 Warranty and Disclaimer

25K1772

Abstract: 2SK1763 2SJ300 2SJ214 2SJ295 2sk mosfet TO220FM 2SJ244 2SK1645 2SJ246
Contextual Info: HITACHI 5.7 Power Conversion 3 Power Management Switch for Battery Operating Equipment P channel MOSFET Vcc Load VCC (V) VDSS (V) lyp* No. I O IN - CM CM S~9 2SJ244 12— 24 30 2SJ246 24~40 60 2SJ24S Power management Switch circuit D -IV L Series Item Package