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J279 Abstract: 2SJ279L Hitachi 2SJ 2SJ279S Contextual Info: 2SJ279C , 2SJ279 Silicon P Channel MOS FET Application DPAK-1 High speed power switching 4 i Features • • • • Low on-resistance H igh speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC	OCR Scan	2sj279c 2sj279 j279 2sj279l +2hitachi 2sj 2sj279s	PDF

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J279

Abstract: 2SJ279L Hitachi 2SJ 2SJ279S
Contextual Info: 2SJ279C , 2SJ279 Silicon P Channel MOS FET Application DPAK-1 High speed power switching 4 i Features • • • • Low on-resistance H igh speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC

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2sj279c 2sj279 j279 2sj279l +2

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