2SC297 Search Results

2SC2979

Contextual Info: SavantIC Semiconductor Product Specification 2SC2979 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High VCBO ·Fast switching speed. APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION

Contextual Info: 2SC2979 Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline T 0 -2 2 0 A B . 1 B a se 2. C o lle c to r F la n g e 3. E m itte r Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage

Contextual Info: 2SC2978 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)800 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC) I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC4748

Abstract: 2SC5306 K20-K k08 transistor
Contextual Info: POWER TRANSISTOR •General switching Package code Ratings Type Ito. DPAK 2SC4499 L /<S) z s e e iis / TO *12« 28C2889 MOO 2SD781 28D975 ' TO-22Ô 2S8566® 2SB566A® AB 2SC2812 2SC2613 2SC2816 e scsim 2SC2979 2SC4913 2SC5273 28047m 2SD476A® 2S)1136

Contextual Info: 2SC2977 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)800 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC) I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC2974

Contextual Info: 2SC2974 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)300 I(C) Max. (A)70 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC) I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC2979

Abstract: DSA003644
Contextual Info: 2SC2979 Silicon NPN Triple Diffused ADE-208-890 Z 1st. Edition Sep. 2000 Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SC2979

Contextual Info: Inchange Semiconductor Product Specification 2SC2979 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High VCBO ・Fast switching speed. APPLICATIONS ・For high voltage ,high speed and high power switching applications PINNING PIN

Hitachi DSA002787

Contextual Info: 2SC2979 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

2SC2979

Abstract: Hitachi DSA002755
Contextual Info: 2SC2979 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 900 V Collector to emitter voltage VCEO 800 V Emitter to base voltage

2SC2973

Contextual Info: 2SC2973 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)300 I(C) Max. (A)40 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC) I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC2979 Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline T0 -2 20 A B 1 Base 2 Collector Flange 3 Emitter 1 I 2 3 Absolute Maximum Ratings (T a := 2 5 °C ) Item Symbol Ratings Unit Collector to base voltage

2SC2970

Contextual Info: SavantIC Semiconductor Product Specification 2SC2970 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High voltage, high speed ·Low saturation voltage APPLICATIONS ·For switching applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC2975

Contextual Info: SavantIC Semiconductor Product Specification 2SC2975 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage ·Fast switching speed. APPLICATIONS ·For switching regulator applications ·General purpose power amplifier PINNING See Fig.2

2SC2978

Abstract: 2SC2936 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933 2SC2936H 2SC2941
Contextual Info: - 140 - Ta=25?C 1*EP(àTc=25‘1C M 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2946(1) 2SC2949 2SC2950 2SC2951 2SC2952 2SC2953 2SC2954 2SC2958 2SC2959 2SC296Ö 2SC2964 2SC2965 2SC2975 2SC2976 2SC2977 2SC2978 2SC2979 2SC2981 2SC2982 2SC2983

Contextual Info: 2SC2979 SILICON NPN TRIPLE DIFFUSED H I T A • r î W l l VOLTAGE. HIGH SPEED AND HIGH POWER | W1TCH NG Ì. tlaw ’ Cotteci« il'ianitct Emitter ■I liü'cn-'tom in mini JEDEC TO-220AB) ■ A B SO LUTE M A XIM U M RATINGS CT;p 2 5 X ‘> Item ■Symbol

2SC297

Abstract: 2SC2979
Contextual Info: 2SC2979 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

TO66 package

Abstract: 2SC2970
Contextual Info: Inchange Semiconductor Product Specification 2SC2970 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High voltage, high speed ·Low saturation voltage APPLICATIONS ·For switching applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC2975

Contextual Info: Inchange Semiconductor Product Specification 2SC2975 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage ·Fast switching speed. APPLICATIONS ·For switching regulator applications ·General purpose power amplifier PINNING See Fig.2

Contextual Info: 2SC2979 Silicon NPN Triple Diffused HITACHI Application H ig h voltage, h ig h speed and h ig h p o w e r sw itch in g Outline TO -220A B Sì 1. Base 2. Collector Flange 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage

2SC2979

Abstract: Hitachi DSA00396
Contextual Info: 2SC2979 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

Contextual Info: 2SC2979 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800è V(BR)CBO (V)900 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3365 -TO3

Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
Contextual Info: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

s 2 umi 1A 250V

Abstract: umi 150 5A 250V umi 5A 250V 2SC2979 1J1ST
Contextual Info: Æ&m o s p e c HIGH-VOLTAGE HIGH-SPEED POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching in inductive circuit,motor control,solenoid and relay drivers. FEATURES: * Collector-Emitter Sustaining VoltageV C E O s u s = 800 V (Min)