ne72089
Abstract: 13ha 2SK354A NE72089A 72000N NE72000 NE720
Contextual Info: NE720 SERIES GENERAL PURPOSE GaAs MESFET NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz • HIG H ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB at 8 GHz • 20 m 2, HIGH MAXIMUM AVAILABLE GAIN
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OCR Scan
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NE720
NE72089A
E72000)
NE72089A)
E72000
NE72000
NE72000L
NE72000M
ne72089
13ha
2SK354A
72000N
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NE72000
Abstract: NE720
Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES NE720 SERIES NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz • HIGH ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB a t8 GHz • HIGH MAXIMUM AVAILABLE GAIN
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OCR Scan
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NE720
NE72089A
NE72000)
NE72089A)
NE72000
NE72000M
NE72000N
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NE800296
Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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Original
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AN82901-1
NE800296
NE800196
NE24406
diode deg avalanche zo 150 63
SK3448
ne8002
NE868199
shockley diode
NE800495-4
shockley diode application
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