18-12 049 transistor
Abstract: k 1094 transistor NE94432 0DD25 SIS 1124
Contextual Info: NEC/ CALIFORNIA SbE J> • b427Mm DQOBSlb 2*15 BNECC NEC T NPN SILICON OSCILLATOR AND MIXER TRANSISTOR 7 NE94432 OUTLINE 32 TO-92 (Units in mm) HIGH GAIN BANDWIDTH PRODUCT: I t = 2000 M Hz TYP • M OUTLINE DIMENSIONS FEATURES • 3 LOW COLLECTOR TO BASE TIME CONSTANT:
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b427mmne9443218-12 049 transistork 1094 transistor+20dd25sis 1124
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2SK571
Abstract: NE720 NE72084 NE72000 NE72089 2SK571 equivalent ga 132 2SK57-1
Contextual Info: NEC/ b427mM QQ022TD 317 «NE CC SbE D CALIFORNIA NEC GENERAL PURPOSE GaAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LOW COST Units in mm NE72000 (CHIP) (Units In pm) • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz i 35 • HIGH ASSOCIATED GAIN
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b427mmqq022tdne720ne72000+7rn/502sk571ne72084ne720892sk571 equivalentga 1322sk57-1
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2SC2150
Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Contextual Info: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use
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bm27m14qqqe40bne57800ne57807+7ne57835ne5782sc2150ne578 nec2sc215ne and micro-xtransistor nec ka 42
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