2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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f2002f2003f20042sc3355 spice model+9transistor c2003c319bmgf1412rf transistor 10ghzmrf134 rf model .lib file2sk571mgf1402mrf9331pb_hp_at41411_19921101
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NE72089A
Abstract: NE720 MB427 ne72089 NE72000 2SK354A RN50
Contextual Info: NEC GENERAL PURPOSE GaAs MESFET FEATURES NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7dB at8G H z • HIGH ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB at 8 GHz m "D HIGH MAXIMUM AVAILABLE GAIN 16.0 dB at 4 GHz
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ne720ne72089ane72000packageoutune89a+5ne72000mmb427ne720892sk354arn50
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
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2SJ99
Abstract: 2SK354 2SK336 2sk3542 2SK356 2SK347 2SK354A 2SK353 2SK345 2sk351
Contextual Info: - 44 - m ? S £ tt m € ìà m & nu Ì i]/ K 2SK331 V * tt $ ft * (V) X I* (A) ft * P d /P c h g m Vg s (V) 100m (min) (max) V d s (A) (A) (V) (min) (max) V d s (V) (V) (V) C—MIC J N 1) -20 GDO 10m G 0.06m 1. 5m 10 2SK332 H # Diff J N D -40 GDS 10m G 0. 2/CH
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2SK571
Abstract: NE720 NE72084 NE72000 NE72089 2SK571 equivalent ga 132 2SK57-1
Contextual Info: NEC/ b427mM QQ022TD 317 «NE CC SbE D CALIFORNIA NEC GENERAL PURPOSE GaAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LOW COST Units in mm NE72000 (CHIP) (Units In pm) • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz i 35 • HIGH ASSOCIATED GAIN
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2sk4005
Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321
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ne72089
Abstract: 13ha 2SK354A NE72089A 72000N NE72000 NE720
Contextual Info: NE720 SERIES GENERAL PURPOSE GaAs MESFET NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz • HIG H ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB at 8 GHz • 20 m 2, HIGH MAXIMUM AVAILABLE GAIN
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NE72000
Abstract: NE720
Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES NE720 SERIES NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz • HIGH ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB a t8 GHz • HIGH MAXIMUM AVAILABLE GAIN
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