2SK334 Search Results

2SK334 Datasheets (29)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK334	Unknown	FET Data Book	Scan	PDF	99.85KB	2
2SK334	Unknown	General Purpose Transistors	Scan	PDF	73.41KB	1
2SK334	Sanyo Semiconductor	Sanyo Datasheets, Cross References and Circuit Examples	Scan	PDF	57.12KB	1
2SK334	Sanyo Semiconductor	Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES	Scan	PDF	113.32KB	3
2SK3340-01	Fuji Electric	MOSFET / Power MOSFET Selection Guide	Original	PDF	42.86KB	2
2SK3340-01	Fuji Electric	N-CHANNEL SILICON POWER MOS-FET	Original	PDF	86.27KB	4
2SK3341-01	Fuji Electric	N-Channel Silicon Power MOSFET	Original	PDF	104.52KB	4
2SK3341-01	Fuji Electric	MOSFET / Power MOSFET Selection Guide	Original	PDF	42.86KB	2
2SK3342	Toshiba	2SK3342 - TRANSISTOR 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-7J1B, 3 PIN, FET General Purpose Power	Original	PDF	250.64KB	6
2SK3342	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK3342	Toshiba		Scan	PDF	142.53KB	2
2SK3342(2-7B1B)	Toshiba	2SK3342 - TRANSISTOR 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power	Original	PDF	250.64KB	6
2SK3342(2-7B2B)	Toshiba	2SK3342 - TRANSISTOR 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B12, SC-64, 3 PIN, FET General Purpose Power	Original	PDF	250.64KB	6
2SK3342(2-7J1B)	Toshiba	2SK3342 - TRANSISTOR 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7J1B, 3 PIN, FET General Purpose Power	Original	PDF	250.64KB	6

2SK3342(TE16L1,NQ)	Toshiba	2SK3342 - MOSFET N-CH 250V 4.5A SC-64	Original	PDF	250.64KB	6
2SK3348	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Switching	Original	PDF	43.01KB	8
2SK3348	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF	43.56KB	8
2SK3348	Renesas Technology	Silicon N Channel MOS FET High Speed Switching	Original	PDF	63.52KB	10
2SK3348	Renesas Technology	Silicon N Channel MOS FET High Speed Switching	Original	PDF	157.45KB	10
2SK3349	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF	42.34KB	8

2SK334 Price and Stock

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Rochester Electronics LLC 2SK3348CNTL-E N-CHANNEL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3348CNTL-E	Bulk	27,000		1,664	1 - 10 - 100 - 1000 - 10000 $0.18	Buy Now
Toshiba America Electronic Components 2SK3342(TE16L1,NQ) MOSFET N-CH 250V 4.5A PW-MOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3342(TE16L1,NQ)	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation 2SK3348CNTL-E 2SK3348CNTL-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK3348CNTL-E		27,000		2,085	1 - 10 - 100 - 1000 - 10000 $0.16	Buy Now
Rochester Electronics	2SK3348CNTL-E		27,000		1	1 - 10 - 100 $0.17 1000 $0.14 10000 $0.13	Buy Now
Chip Stock	2SK3348CNTL-E		7,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK334 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings	Original	2SK3341-01	PDF
Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3341-01	PDF
Hitachi DSA002753 Contextual Info: 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A Z 2nd.Edition. June 1999 Features • • • Low on-resistance RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA) 2.5 V gate drive device. Small package (CMPAK)	Original	2SK3348 ADE-208-772 2SK3348 Hitachi DSA002753	PDF
Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm : \|Yfs\| = 4.5 S (typ.) 1.5 ± 0. 2 5.5 ± 0. 2 : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance 1.2 MAX. z Low drain-source ON resistance 6.5 ± 0.2	Original	2SK3342	PDF
K3342 Abstract: 2SK3342 Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm Switching Regulator and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance	Original	2SK3342 K3342 2SK3342	PDF
2SK3341-01 equivalent Abstract: 2SK3341-01 2sk3341 Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3341-01 2SK3341-01 equivalent 2SK3341-01 2sk3341	PDF
k3342 Abstract: 2sk3342 2-7J1B Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK3342 Switching Regulator and DC/DC Converter Applications Motor Drive Applications Low drain-source ON-resistance : RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance	Original	2SK3342 k3342 2sk3342 2-7J1B	PDF
Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3341-01	PDF
K3342 Abstract: 2SK3342 Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm : \|Yfs\| = 4.5 S (typ.) 1.5 ± 0. 2 5.5 ± 0. 2 : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance 1.2 MAX. z Low drain-source ON resistance 6.5 ± 0.2	Original	2SK3342 K3342 2SK3342	PDF
Contextual Info: TOSHIBA 2SK3342 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK3342 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm	OCR Scan	2SK3342	PDF
2SK3102-01R Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01	Original	2SK3340-01 2SK2870-01L, 2SK2871-01 2SK2872-01MR 2SK2873-01 2SK2638-01MR 2SK2639-01 2SK2754-01L, 2SK2755-01 2SK2756-01R 2SK3102-01R 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent	PDF
Hitachi DSA002753 Contextual Info: 2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 Z 1st.Edition. June 1999 Features • • • Low on-resistance RDS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) RDS = 4.8 Ω typ. (at VGS = 2.5 V , ID = 10 mA) 2.5 V gate drive device Small package (SMPAK)	Original	2SK3349 ADE-208-804 2SK3349 Hitachi DSA002753	PDF
k3342 Abstract: 2SK3342 TC4025 Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm Switching Regulator and DC-DC Converter Applications Motor Drive Applications : \|Yfs\| = 4.5 S (typ.) 1.7 ± 0. 2 5.5 ± 0.2 : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance	Original	2SK3342 k3342 2SK3342 TC4025	PDF
2SK3348 Abstract: Hitachi DSA00397 Contextual Info: 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) R DS = 2.2 Ω typ. (VGS = 2.5 V , I D = 50 mA) • 2.5 V gate drive device. • Small package (CMPAK)	Original	2SK3348 ADE-208-772 2SK3348 Hitachi DSA00397	PDF

K3342 Abstract: 2SK3342 Contextual Info: 2SK3342 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅤ 2SK3342 単位: mm ○ スイッチングレギュレータ用 ○ DC−DC コンバータ用 ○ モータドライブ用 0.8 MAX. : Vth = 1.5～3.5 V (VDS = 10 V, ID = 1 mA)	Original	2SK3342 K3342 2SK3342	PDF
Contextual Info: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings	Original	2SK3340-01	PDF
Contextual Info: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features 11.6±0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3340-01	PDF
2SK334 Abstract: B00J TT 25 N12 Contextual Info: 2SK334 KO.C933B S ilic o n N-Channel Junction-Type F ie ld E ffe c t TR F or Co n d e n s e r Mic r o p h o n e s SAM VO FEATURE • Because it has an u ltra -c o m p a c t o u tlin e . s t b can be made c o m p a c t ABSOLUTE MAXIMUM RATINGS/T* Drain-gate current	OCR Scan	C9338 2075KI 2SK334 2SK334 B00J TT 25 N12	PDF
2SK3349 Abstract: DSA003644 Contextual Info: 2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 Z 1st.Edition. June 1999 Features • Low on-resistance R DS = 2.8 typ. (at V GS = 4 V , ID = 25 mA) R DS = 4.8 typ. (at V GS = 2.5 V , I D = 10 mA) • 2.5 V gate drive device • Small package (SMPAK)	Original	2SK3349 ADE-208-804 2SK3349 DSA003644	PDF
k3342 Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm Switching Regulator and DC-DC Converter Applications Motor Drive Applications  Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.)  High forward transfer admittance	Original	2SK3342 k3342	PDF
k3342 Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Switching Regulator and DC-DC Converter Applications Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance	Original	2SK3342 k3342	PDF
2SK3349 Abstract: Hitachi DSA00395 Contextual Info: 2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 Z 1st.Edition. June 1999 Features • Low on-resistance R DS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) R DS = 4.8 Ω typ. (at VGS = 2.5 V , I D = 10 mA) • 2.5 V gate drive device • Small package (SMPAK)	Original	2SK3349 ADE-208-804 2SK3349 Hitachi DSA00395	PDF
Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings	Original	2SK3341-01	PDF
Contextual Info: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings	Original	2SK3340-01	PDF

2SK334 Search Results

2SK334 Datasheets (29)

2SK334 Price and Stock

Rochester Electronics LLC 2SK3348CNTL-E

Toshiba America Electronic Components 2SK3342(TE16L1,NQ)

Renesas Electronics Corporation 2SK3348CNTL-E

2SK334 Datasheets Context Search

Hitachi DSA002753

K3342

2SK3341-01 equivalent

k3342

K3342

2SK3102-01R

Hitachi DSA002753

k3342

2SK3348

K3342

2SK334

2SK3349

k3342

k3342

2SK3349