2SK2654 Search Results

2sk2654

Abstract: 2SK2654-01
Contextual Info: 2SK2654-01 N-channel MOS-FET FAP-IIS Series 900V > Features - 2Ω 8A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

Contextual Info: 2SK2654-01 N-channel MOS-FET FAP-IIS Series 900V > Features - 2Ω 8A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

L04A

Contextual Info: 2SK2654-01 FU JI N-channel MOS-FET FAP-IIS Series 900V > Features - 2Q TO-3P 4.5 M Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - 150W > Outline Drawing High Speed Switching Low On-Resistance

2SK2654

Contextual Info: FU JI 2SK2654-01 IM lÜ M e u te J E FAP-IIS Series N-channel MOS-FET > Features - 2Q 900V TO-3P 4.5 LM Switching Regulators UPS DC-DC converters General Purpose Power Amplifier J i. > Maximum Ratings and Characteristics Item Drain-Source-Voltage Continous Drain Current

MOSFET 8A 900V

Abstract: 2SK2654-01
Contextual Info: 2SK2654-01 N-channel MOS-FET FAP-IIS Series 900V > Features - 2Ω 8A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

2SK2654

Abstract: 2SK2654-01
Contextual Info: 2SK2654-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

mt 10p10

Abstract: 10P10 MT A 10P10 AR 8 2sk2654 2SK2654-01
Contextual Info: FUJI 2SK2654-01 iM iü M e u iM J E FAP-IIS Series N-channet MOS-FET 90 0V > Features - 2Q 8A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated

2sk2654

Abstract: 2SK2654-01
Contextual Info: 2SK2654-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK2654-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2SK2654-01

Contextual Info: 2SK2654-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

2SK2696

Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
Contextual Info: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack

Contextual Info: JE /V 7 -M 0 S F E T / Power MOSFETs FA P-IIS '> V - X FA P-IIS series iWi>m • ^c77/ ’i' - 7 > '> 1 iiM f S s I m s Device type Voss Voita Repetitive avalanche rated to Id pulse Amps. Amps. I t e (on) Max. * ’ Ohms (Si) Pd * V gss Vos (th) Typ.

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

IRF 548

Abstract: irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800
Contextual Info: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 0.05 0.28 0.25 0.30 0.22 GIS ONS ONS ONS ONS 812 851 851 849 849 2N5886 2N6027 2N6028 2N6031 2N6035 Price Mfr.Õs Type Mfr.Õs Code Page 2.23 0.24 0.23 3.12 0.39

L-698

Abstract: FAIU
Contextual Info: _L S P E C 1 F 1 C A T I O N DEVICE NAME : TYPE NAME : SPEC. No. : P o w e r M O S F E T 2 S K 2 6 5 4— 0 1 Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. NAM E DATE . — APPROVED Fuji Electric Cc^Ltd. DRAWN o z CHECKED

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

2sk3337

Abstract: 2SK2655-01R
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated（Continued） 形 式 Device type 2SK2767-01 2SK2768-01L, S 2SK2769-01MR

ET412

Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Contextual Info: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646

2SK2652

Abstract: 2SK2771-01R
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT

2SK3102-01R

Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

F5022

Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01

2sk2645

Abstract: 2SK2648 2SK2655 2SK2759-01R TO-3PF 2SK2761 2SK2761-01MR 2SK2769-01MR 2SK2638-01MR 2SK2639-01
Contextual Info: <s MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2638-01M R 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01M R 2SK27S7-01 2SK27S8-01L.S 2SK2641-01 FAP450 2SK2759-01R