Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N60C Search Results

    2N60C Datasheets (6)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N60C
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 55.73KB 1
    2N60C
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 71.98KB 1
    2N60C
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 79.67KB 1
    2N60C
    Unknown GE Transistor Specifications Scan PDF 38.16KB 1
    2N60C
    Unknown Vintage Transistor Datasheets Scan PDF 45.76KB 1
    2N60C
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 146.58KB 1
    SF Impression Pixel

    2N60C Price and Stock

    Select Manufacturer

    onsemi FQD2N60CTM-WS

    Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME FQD2N60CTM-WS 1
    • 1 $1.10
    • 10 $0.79
    • 100 $0.53
    • 1000 $0.44
    • 10000 $0.44
    Get Quote
    Rochester Electronics FQD2N60CTM-WS 50 1
    • 1 -
    • 10 -
    • 100 $0.39
    • 1000 $0.32
    • 10000 $0.29
    Buy Now
    Vyrian FQD2N60CTM-WS 11,294
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    IXYS Corporation IXGH72N60C3

    Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXGH72N60C3 1
    • 1 $7.07
    • 10 $5.62
    • 100 $5.05
    • 1000 $5.05
    • 10000 $5.05
    Get Quote
    Bristol Electronics IXGH72N60C3 30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    IXYS Corporation IXGX72N60C3H1

    Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXGX72N60C3H1 1
    • 1 $12.01
    • 10 $9.46
    • 100 $8.51
    • 1000 $8.51
    • 10000 $8.51
    Get Quote

    IXYS Corporation IXGN72N60C3H1

    Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXGN72N60C3H1 1
    • 1 $32.56
    • 10 $26.56
    • 100 $26.56
    • 1000 $26.56
    • 10000 $26.56
    Get Quote
    Mouser Electronics IXGN72N60C3H1 474
    • 1 $36.41
    • 10 $26.94
    • 100 $26.27
    • 1000 $26.27
    • 10000 $26.27
    Buy Now
    TTI IXGN72N60C3H1 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $24.16
    • 10000 $24.16
    Buy Now

    onsemi FQU2N60CTU

    Power MOSFET, N-Channel, QFET?, 600 V, 1.9 A, 4.7 ?, IPAK - Rail/Tube (Alt: FQU2N60CTU)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FQU2N60CTU Tube 5,040
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.37
    Get Quote
    Rochester Electronics FQU2N60CTU 9 1
    • 1 -
    • 10 -
    • 100 $0.51
    • 1000 $0.43
    • 10000 $0.38
    Buy Now
    Flip Electronics FQU2N60CTU 307,440
    • 1 $0.24
    • 10 $0.24
    • 100 $0.24
    • 1000 $0.24
    • 10000 $0.24
    Get Quote

    2N60C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n60c3

    Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
    Contextual Info: l j A D D 2N60C3D, h g t i s i 2N60C3D, 2N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices


    OCR Scan
    hgtp12n60c3d2n60c3dhgt1s12n60c3dsta49123+10ta491882n60c312n60c3d2n60cta49182igbt 12n60c3dtransistor te 901 equivalent12n60c2n60to-262aa equivalent PDF

    2N60C

    Abstract: fdu2n60c 305 marking code d-pak
    Contextual Info: 2N60C/2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS on = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 8.5 nC)


    Original
    fqd2n60c/fqu2n60cfqu2n60cfqu2n60ctltufqu2n60ctu+32n60cfdu2n60c305 marking code d-pak PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original
    2n70002n7000a2n7000k70max+1345max55max80max9n90c9n50cigbt 20n50kmb*050n60p7n65c5n50csmd diode s4 58a2n60c2n60 mosfet smpsstr tv smps PDF

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan
    50/ia800maget706get708+15get914get3013get3646ge1705cet7082n2926 equivalentbeta transistor 2n22222n3392 equivalent2n3416 equivalent2n3393 equivalent2n3900a2n3394 equivalent2n3859a equivalent to pnp1n45322n5232a equivalent PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan
    2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149 PDF

    2N6008

    Abstract: 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4


    OCR Scan
    50/ia800maget706get708+15get914get3013get3646ge1705cet7082n60082n60002n3960a2n59982n60062n60152n60c2n60022n8004get3014 PDF

    d33025

    Abstract: 2N6000 2n3391 2N6006 2N6002 GET3013 GET3014 GET3638 2n2926 GET706
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan
    50/ia800maget706get708+13get914get3013get3646ge1705cet708d330252n60002n33912n60062n6002get3014get36382n2926 PDF

    2N6004

    Abstract: 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan
    50/ia800maget706get708+15get914get3013get3646ge1705cet7082n60042n3960a2n3856d330252n44242n80042n60002n60162n3856a2n6015 PDF

    2N60C

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60-C Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    2n60-cqw-r502-a462n60c PDF

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


    OCR Scan
    2g1012g1022g1032g109+152g2202g2212g2222g2232g2242n1892n1136b2n420b1151 equivalent2sa114oc592t3122t203sft1252n1152 PDF

    d33025* specification

    Abstract: 2N5309 2N5998 2N6006 2N6000 2N6002 GET3013 GET3014 GET3638 GET3646
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan
    50/ia800maget706get708+13get914get3013get3646ge1705cet708d33025* specification2n53092n59982n60062n60002n6002get3014get3638 PDF

    2n6004

    Abstract: 2n4424 2N5825 2N6015 2N6000 GET2222A 2n524 2N5309 2N6006 d33025
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p


    OCR Scan
    50/ia800maget706get708+15get914get3013get3646ge1705cet7082n60042n44242n58252n60152n6000get2222a2n5242n53092n6006d33025 PDF

    2NS35

    Abstract: D33025 TRANSISTOR 2n3901 pnp beta 250 ft 150 2N60C 2N38S 2N601 transistor 2n3391 2N6000 GET3014
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


    OCR Scan
    50/ia800maget706get708+15get914get3013get3646ge1705cet7082ns35d33025transistor 2n3901pnp beta 250 ft 1502n60c2n38s2n601transistor 2n33912n6000get3014 PDF

    2N3856

    Abstract: 2N3403 2N4256 2N3405 2N4425 2N4424 2N2926 029e1 2N5356 2N6000
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan
    50/ia800maget706get708+15get914get3013get3646ge1705cet7082n38562n34032n42562n34052n44252n44242n2926029e12n53562n6000 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan
    sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353 PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan
    my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan
    mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214 PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan
    rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan
    an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF

    1N5062 ph

    Contextual Info: UM10438 UBA2015AP 120 V AC evaluation board Rev. 2.1 — 9 March 2012 User manual Document information Info Content Keywords UBA2015AP, evaluation board, dimming, boost Abstract This document describes the performance, technical data and wiring of the UBA2015AP 120 V (AC) evaluation board.


    Original
    um10438uba2015ap1n5062 ph PDF

    Newmarket Transistors

    Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
    Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu


    Original
    st3042st30433n1203n121+162n3322n3332n3352n3362n3342scl16newmarket transistorssgs-ates transistors2g1082ac128-012n174 rca2bd1242g3812n1092g2712n123 PDF

    d33025

    Abstract: 2n3960a 2N6004 D33030 2n2926 2N8004 2N6002 CET708 2N6006 2N6015
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan
    50/ia800maget706get708+14get914get3013get3646ge1705cet708d330252n3960a2n6004d330302n29262n80042n60022n60062n6015 PDF

    2N6016

    Abstract: 2N5816 2N3856 2N3638A 2N5822 2N6000 2N6002 GET3014 GET3638 GET706
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4


    OCR Scan
    50/ia800maget706get708+14get914get3013get3646ge1705cet7082n60162n58162n38562n3638a2n58222n60002n6002get3014get3638 PDF