2N60C Search Results
2N60C Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2N60C | Motorola | Motorola Semiconductor Datasheet Library | Scan | 55.73KB | 1 | ||
| 2N60C | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 71.98KB | 1 | ||
| 2N60C | Unknown | Shortform Transistor Datasheet Guide | Short Form | 79.67KB | 1 | ||
| 2N60C | Unknown | GE Transistor Specifications | Scan | 38.16KB | 1 | ||
| 2N60C | Unknown | Vintage Transistor Datasheets | Scan | 45.76KB | 1 | ||
| 2N60C | Unknown | Shortform Transistor PDF Datasheet | Short Form | 146.58KB | 1 |
2N60C Price and Stock
onsemi FQD2N60CTM-WSTransistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQD2N60CTM-WS | 1 |
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FQD2N60CTM-WS | 50 | 1 |
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FQD2N60CTM-WS | 11,294 |
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IXYS Corporation IXGH72N60C3Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3 |
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IXGH72N60C3 | 1 |
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IXGH72N60C3 | 30 |
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IXYS Corporation IXGX72N60C3H1Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™ |
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IXGX72N60C3H1 | 1 |
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IXYS Corporation IXGN72N60C3H1Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXGN72N60C3H1 | 1 |
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IXGN72N60C3H1 | 474 |
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IXGN72N60C3H1 | Tube | 300 |
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onsemi FQU2N60CTUPower MOSFET, N-Channel, QFET?, 600 V, 1.9 A, 4.7 ?, IPAK - Rail/Tube (Alt: FQU2N60CTU) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQU2N60CTU | Tube | 5,040 |
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FQU2N60CTU | 9 | 1 |
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FQU2N60CTU | 307,440 |
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2N60C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2n60c3
Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
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OCR Scan |
hgtp12n60c3d2n60c3dhgt1s12n60c3dsta49123+10 | |
2N60C
Abstract: fdu2n60c 305 marking code d-pak
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Original |
fqd2n60c/fqu2n60cfqu2n60cfqu2n60ctltufqu2n60ctu+3 | |
9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
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Original |
2n70002n7000a2n7000k70max+13 | |
2N2926 equivalent
Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
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OCR Scan |
50/ia800maget706get708+15 | |
2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
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OCR Scan |
2n7588p3139bc233asprague 40d+6 | |
2N6008
Abstract: 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014
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OCR Scan |
50/ia800maget706get708+15 | |
d33025
Abstract: 2N6000 2n3391 2N6006 2N6002 GET3013 GET3014 GET3638 2n2926 GET706
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OCR Scan |
50/ia800maget706get708+13 | |
2N6004
Abstract: 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015
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OCR Scan |
50/ia800maget706get708+15 | |
2N60CContextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60-C Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
Original |
2n60-cqw-r502-a462n60c | |
2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
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OCR Scan |
2g1012g1022g1032g109+15 | |
d33025* specification
Abstract: 2N5309 2N5998 2N6006 2N6000 2N6002 GET3013 GET3014 GET3638 GET3646
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OCR Scan |
50/ia800maget706get708+13 | |
2n6004
Abstract: 2n4424 2N5825 2N6015 2N6000 GET2222A 2n524 2N5309 2N6006 d33025
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OCR Scan |
50/ia800maget706get708+15 | |
2NS35
Abstract: D33025 TRANSISTOR 2n3901 pnp beta 250 ft 150 2N60C 2N38S 2N601 transistor 2n3391 2N6000 GET3014
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OCR Scan |
50/ia800maget706get708+15 | |
2N3856
Abstract: 2N3403 2N4256 2N3405 2N4425 2N4424 2N2926 029e1 2N5356 2N6000
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OCR Scan |
50/ia800maget706get708+15 | |
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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OCR Scan |
sx3704ap239transistor 801398c547+6 | |
hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
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OCR Scan |
my110bz0206z0208z0210+16 | |
MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
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OCR Scan |
mc2259mc880pmc9713pmc2257+6 | |
RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
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OCR Scan |
rca sk cross-referencecd40032n2505tf408+6 | |
transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
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OCR Scan |
an-134transistor c2060transistor shortform datasheet & cross references1n4465+7 | |
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
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OCR Scan |
500ma240mwfy51 h 120cbd124+8 | |
1N5062 phContextual Info: UM10438 UBA2015AP 120 V AC evaluation board Rev. 2.1 — 9 March 2012 User manual Document information Info Content Keywords UBA2015AP, evaluation board, dimming, boost Abstract This document describes the performance, technical data and wiring of the UBA2015AP 120 V (AC) evaluation board. |
Original |
um10438uba2015ap1n5062 ph | |
Newmarket Transistors
Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
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Original |
st3042st30433n1203n121+16 | |
d33025
Abstract: 2n3960a 2N6004 D33030 2n2926 2N8004 2N6002 CET708 2N6006 2N6015
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OCR Scan |
50/ia800maget706get708+14 | |
2N6016
Abstract: 2N5816 2N3856 2N3638A 2N5822 2N6000 2N6002 GET3014 GET3638 GET706
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OCR Scan |
50/ia800maget706get708+14 | |