2N332 Search Results

2N3330

Abstract: 2N3332 2N3331 2n3329
Contextual Info: TYPES 2N3329 THRU 2N3332 P CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O D L S 644905, M A R C H 1964 FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS

Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N22A

Abstract: 2N4271 2N3947 2N3326 2N3666
Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N3329

Abstract: 2N3330 2N3331 2N3332 2N2843 "Analog Multipliers" 2N2608 2N2608JAN
Contextual Info: S Siliconix P erform ance C u rves PC Se e Section 5 2N3330 • Small-Signal Amplifiers ■ Analog M u ltip liers ■ M odulators b e n e f it s Ease of Am plifier Design I q SS & Gfs Closely Specified 2N3331 ♦ABSO LUTE M A X IM U M R A TIN G S 25°C 2N3329

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

Contextual Info: 2N3327 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V)65 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.

2N2608

Abstract: 2N3329-32 2N3909 2N2843 2N2608CHP 2N2608JAN 2N2843CHP 2N3909CHP 2N284 p-channel jfet
Contextual Info: U & p-channel JFET B designed f o r . . . S ilic o n ix General Purpose Amplifiers and Attenuators TYPE PACKAGE P R IN C IP A L D E V IC E S Single Single Single TO-18 TO-72 Chip 2N 2608, 2N 2608JA N , 2N2843 2N3329-32, 2N3909, V C R 5 P 2N 2608C H P, 2 N2843CH P,

Contextual Info: 2N332 Si NPN Lo-Pwr BJT 75.00 Transistors Transistors Bipolar Si NP. 1 of 1 Home Part Number: 2N332 Online Store 2N332 Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N332

Abstract: ScansUX7
Contextual Info: TYPE 2N332 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN NO. DL-S 691036, M A R C H 1960 Beta From 9 to 20 Specifically designed for high gain at high temperatures Welded case with glass-to-metal hermetic seal between case and leads. Unit weight is approximately

Contextual Info: TYPE 2N332 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN NO. D L -S 591035, M A R C H 1959 Beta From 9 to 20 Specifically designed for high gain at high temperatures m echanical data W eld ed case with glass-to -m etal h e rm e tic s e a l betw een c a s e an d lead s. U n it w eig h t is a p p ro x im a te ly

2N3330

Abstract: 2N2498 2N3332 2N2500 2N3329 2N3331 JANTX 2H332 2N2497 2N3330 JANTX 2K333
Contextual Info: I INCH-POUND ! MIL-S-19 500/37 8B 21 June 1990 SUPERSEDING-Mil-S-19500/378A 18 Marrh 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES ZHZ497 THROUGH ZHZ50Q, 2N3329 THROUGH 2N3332, JANTX This s p ecifica tio n is approved for use by a ll Depart­

UC451

Contextual Info: r a @ y < § T T ATTM,®< LOW P O W E R FIELD E F F E C T T R A N S IS T O R S Type Number Case Style T O - 2N2608 2N2609* 2N3328 2N3329 2N3330 [FDm i Geometry BVgss Min (V) Ciss Max (pF) 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 30 30 20 20 20

2N5021

Abstract: 2N5265 2N3331 2N5266 2n5268 2N5460 2n5462 2N2608 2N2609 2N3328
Contextual Info: Type Number Case Style T O - Geometry BVgss Min (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 2N3331 2N3332 KK3820 KK4342 KK4343 72 72 92 92 92 KK4360 KK4381 KK4382 2N5020 2N5021 [py L O W P O W E R FIELD E F F E C T T R A N S I S T O R S

2n3329

Contextual Info: 2N3329 asi P-CHANNEL SILICON JUNCTION FET DESCRIPTION: The 2N3329 is Designed for Small Signal Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS Id -10 mA V ds 10 V V qs 20 V P diss 300 mW @ Tc = 25 °C T stg -65 to +200°C Tj -65 to +200°C

2n5268

Abstract: 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266
Contextual Info: BVgss Ciss Type Case Geometry Min Max Number Style V (pF) 2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 KK4360 KK4381 KK4382 2N5020 2N5021 KK5033 2N5265 2N5266 2N5267 2N5268 2N5460 2N5461 2N5462 UC451 TO18 TO18 TO72 TO72 TO72 TO72

SO45

Abstract: 2N243 2N2247 2SC1072 LOW-POWER SILICON NPN 2N472 2N2897 BSY10
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

2N702

Abstract: 2N3565 2N3569 2N1506 2N1069 2N1389 2N3645 2N3644 2N3566 2N2405A
Contextual Info: J325835_4 A D V A N C E D S E M I C O N D U C T O R 82 D n n n ^ Q SILICON ADVANCED T R A F ^ IST O R S 62 SEMICONDUCTOR P d @ T c =25°C POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A

2N3329

Contextual Info: 2N3329 P-CHANNEL SILICON JUNCTION FET DESCRIPTION: The 2N3329 is Designed for Small Signal Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS PACKAGE STYLE TO- 72 Id -1O mA V ds 1O V Vgs 2O V Pd iss 3OO mW @ Te # 25 0C Ts t g -65 to '2OO0C Tj

2N904

Abstract: 2N929 texas 2N906 2N905 Emihus 2N828 2N843 2N928 2N850 LOW-POWER SILICON NPN
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

2N3323

Abstract: germanium transistors PNP
Contextual Info: 2N3323 Ge PNP Lo-Pwr BJT 16.99 Transistors Bipolar Germanium PNP. 1 of 1 Home Part Number: 2N3323 Online Store 2N3323 Diodes G e PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N22A

Abstract: 2N3302 2N3326 2N3388 2N3418 2N3419 2N3421 2N3498 2N3500 2N3501
Contextual Info: I CENTRAL SEMICONDUCTOR 1989963 CENTRAL SEMICONDUCTOR bl DE ODDDai? 3 ’_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. TYPE NO. Vcb V ce V eb hFE at •c Vc e V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N4033

Abstract: 2N3702 2N3794 2N4235 2N3107 2N3115 2N3073 2N3081 2N3108 2N3109
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. >- C A SE a < _i o CL M AXIM UM R A T IN G S Pd mW •c H V C E (S A T ) FE 'c (A ) V C EO (V ) min max max 'c f T min Cob C O M PLE­ max M EN TA RY TYPE (m A | V CE (V ) (V ) (A ) (MHz) (pF) 2N3073 2N3081 2N3107