2N2609 Search Results

P-Channel JFET

Abstract: 2N2609 TO206AA
Contextual Info: TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/296 Devices Qualified Level 2N2609 JAN ABSOLUTE MAXIMUM RATINGS TA = +250C unless otherwise noted Parameters / Test Conditions Symbol Value Gate-Source Voltage Power Dissipation (1) TA = +250C Operating Junction & Storage Temperature Range

2N2608

Abstract: 2n2844 2N2843 2n2609 VGS-30V PCHANNEL 2N2608CHP 2N2608JAN 2N2843CHP 2N3909 2N3909CHP
Contextual Info: • G en eral Purpose A m plifiers BENEFITS • JAN Approved Version Available 2N2609 Perform ance Curves PC PD See Section 5 . Siliconix 2N2608 S p-channel JFETs designed fo r TO -1 8 See Section 7 •ABSOLUTE M AXIMUM RATINGS 25°C Gate-Drain and Gate-Source Voltage (Note 3 ) . 30 V

2N2609

Abstract: mosfet p channel
Contextual Info: Technical Data 2N2609 JAN POWER MOSFET P CHANNEL MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/296 …DESIGNED FOR GENERAL PURPOSE SMALL SIGNAL SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS TA = 250C unless otherwise noted Parameters / Test Conditions

2N2609

Abstract: 206AA
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/296 DEVICES LEVELS 2N2609 MQ = JAN Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

2N2608

Abstract: 2N2609 2N2607 X2N2607 p-channel-jfet X2N2608 X2N2609 2N2607-2N2609
Contextual Info: CALOGIC 1ÖM4325 MfiE D CORP OOOOSflb 1 I CGC caloric CORPORATION V 2N2607-2N2609 APPLICATIONS ABSO LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Low-Level Choppers • Data Switches • Commutators G ate-Source V o lta g e . 30V

UC451

Contextual Info: r a @ y < § T T ATTM,®< LOW P O W E R FIELD E F F E C T T R A N S IS T O R S Type Number Case Style T O - 2N2608 2N2609* 2N3328 2N3329 2N3330 [FDm i Geometry BVgss Min (V) Ciss Max (pF) 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 30 30 20 20 20

2N5021

Abstract: 2N5265 2N3331 2N5266 2n5268 2N5460 2n5462 2N2608 2N2609 2N3328
Contextual Info: Type Number Case Style T O - Geometry BVgss Min (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 2N3331 2N3332 KK3820 KK4342 KK4343 72 72 92 92 92 KK4360 KK4381 KK4382 2N5020 2N5021 [py L O W P O W E R FIELD E F F E C T T R A N S I S T O R S

2N5266

Contextual Info: ÄTTÄ[L LOW P O W E R FIELD E FFE C T T R A N S IS T O R S ¡[L ÄtMPOJFDIlKi Type Number Case Style (T O - Geometry BVgss Min (V) Ciss Max (PF) Vgs (off) Min Max (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3

2n5268

Abstract: 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266
Contextual Info: BVgss Ciss Type Case Geometry Min Max Number Style V (pF) 2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 KK4360 KK4381 KK4382 2N5020 2N5021 KK5033 2N5265 2N5266 2N5267 2N5268 2N5460 2N5461 2N5462 UC451 TO18 TO18 TO72 TO72 TO72 TO72

2n2609

Contextual Info: TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/296 Devices Qualified Level 2N2609 JAN ABSOLUTE MAXIMUM RATINGS TA = +250C unless otherwise noted Parameters / Test Conditions Symbol Value Gate-Source Voltage Power Dissipation (1) T A = +250C Operating Junction & Storage Temperature Range

2N2608

Abstract: 2N3909 2N3329-32 2n260b 2N2608CHP 2N2608JAN 2N2843 2N2843CHP 2N3909CHP
Contextual Info: designed fo r S . S ilic o n ix Performance Curves PC PD See Section 5 BENEFITS • JAN Approved Version Available 2N2609 • G en eral Purpose A m plifiers 2N2608 p-channel JFETs TO-18 See Section 7 •ABSOLUTE M A XIM U M RA TIN G S 25°C Gate-Drain and Gate-Source Voltage (Note 3 ). 30 V

2n2607

Abstract: 2N2608
Contextual Info: CALOGIC CORP MAE D calocft WË 1ÔMM325 00002flb 1 • C6C P-ChannelJFET General Purpose Amplifier CORPORATION T-Z1-ZS V 2N2607-2N2609 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted APPLICATIONS • Low-Level Choppers • Data Switches • Commutators

2n2609

Contextual Info: TYPES 2N2608, 2N2609 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L -S 7 0 1 1 3 4 1 , A U G U S T 1 9 7 0 FOR SM A L L -S IG N A L, LOW-NOISE APPLICATIO N S • High Input Impedance * mechanical data T H E G A T E IS IN E L E C T R IC A L C O N T A C T W IT H T H E CASE

Contextual Info: , One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2N2609 GENERAL DESCRIPTION - The 2N2609 is a silicon Planar* P-channel field-effect effect transistor rvice. designed primarily for low power audio-frequency applications in industrial service.

VGS-30V PCHANNEL

Abstract: 2N2609 2N2844 2n260b 2N2608 2N2609CHP 2N2609JAN 2N2844CHP
Contextual Info: designed fo r S . Siliconix Performance Curves PC PD See Section 5 B EN EFITS • JAN Approved Version Available 2N2609 • G en eral Purpose A m plifiers 2N2608 p-channel JFETs TO-18 See Section 7 •A B S O L U T E M A X IM U M R A TIN G S 25°C Gate-Drain and Gate-Source Voltage (Note 3 ) . 30 V

2n4391, Voltage controlled

Abstract: sw 2n4093 2N5906
Contextual Info: -Ælitran Devices. Inc. knot? ¥ ©[i[L[i©¥ tFcnr© ^©[D yj(gir ©attæmkqx IN TRO D U CTIO N TO TH E F E T S SDF1001 thru 1006 FOR SWITCHING In most switching applications it is d esirable to have a high O N -O FF-ratio. It is also desirable to b e ab le to switch both

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

2N4303

Abstract: sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302
Contextual Info: si6halFET Product Specifications 7-io N & P-Channel Single JFETs Siliconix N N N P P P 8.0 6.0 11.5 6.5 3.2 5.0 5.0 9.5. 20 20 40 40 40 30 30 30 _ - _ _ _ _ _ _ _ 45 45 - _ _ - _ 0.9 2.0 0.2 0.44 1.0 2.0 5.0 1.0 2.0 0.5 0.1 3.0 I5.0 15.0 _ 25 75 150 _ 90 60

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

e270 siliconix

Abstract: 2N3379 2N2844 InterFET MPF2609
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer g. V BR GSS IDSS (V) (A) Min (S) Max 2.0m 2.2m 2.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 5.0m 5.0m 5.0m 5.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 6.0m 6.0m 6.0m 6.0m 6.0m 6.0m 1.4m 1.5m 1.0m

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1