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    1N5822 Search Results

    1N5822 Datasheets (115)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    1N5822
    Bytes 3.0 AMP SCHOTTKY BARRIER RECTIFIERS Original PDF 152.93KB 2
    1N5822
    Compensated Devices 3 AMP SCHOTTKY BARRIER RECTIFIERS Original PDF 36.12KB 2
    1N5822
    Daesan Electronics CURRENT 3.0 Amperes VOLTAGE 20 to 40 Volts Original PDF 329.31KB 2
    1N5822
    DC Components TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER Original PDF 399.19KB 2
    1N5822
    Diodes Incorporated Short Form Selection Guide Original PDF 3.18MB 129
    1N5822
    Diodes Incorporated 3.0A SCHOTTKY BARRIER RECTIFIERS Original PDF 50.83KB 2
    1N5822
    Diodes Incorporated DIODE-RECT, SHTKY 40V, 3A@TJ=150C, IR=2MA@2 Original PDF 41.23KB 3
    1N5822
    Diotec Diode, 3A, 40V, Schottky Barrier Rectifier Original PDF 58.06KB 2
    1N5822
    Diotec Si-Schottky-Rectifiers Original PDF 39.67KB 2
    1N5822
    EIC Semiconductor SCHOTTKY BARRIER RECTIFIER DIODES Original PDF 28.03KB 2
    1N5822
    Fagor 40 V, 3 A schottky barrier rectifier Original PDF 38.39KB 2
    1N5822
    Fairchild Semiconductor Schottky Rectifiers Original PDF 41.22KB 3
    1N5822
    Fairchild Semiconductor 3.0 Ampere Schottky Barrier Rectifiers Original PDF 39.04KB 2
    1N5822
    FCI Diode, 3A, 40V, Barrier Schottky Diode Original PDF 121.69KB 1
    1N5822
    Formosa 3.0 AMP SCHOTTKY BARRIER RECTIFIERS Original PDF 33.14KB 2
    1N5822
    Galaxy Semi-Conductor Holdings SCHOTTKY BARRIER RECTIFIER Original PDF 75.14KB 2
    1N5822
    General Semiconductor DIODE SCHOTTKY DIODE 40V 3A 2DO-201AD Original PDF 19.88KB 2
    1N5822
    General Semiconductor SCHOTTKY BARRIER RECTIFIER Original PDF 43.96KB 2
    1N5822
    Good-Ark SCHOTTKY BARRIER RECTIFIER Original PDF 188.26KB 2
    1N5822
    HY Electronic SCHOTTKY BARRIER RECTIFIERS Original PDF 34.29KB 2
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    1N5822 Price and Stock

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    onsemi 1N5822RLG

    Schottky Barrier Rectifier 3.0 A 40 V
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    Master Electronics 1N5822RLG 3,700
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    Verical () 1N5822RLG 5,920 47
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    1N5822RLG 963 7
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    Avnet Americas 1N5822RLG Tape & Reel 31,500 34 Weeks 1,500
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    Arrow Electronics () 1N5822RLG Cut Strips 5,920 34 Weeks 1
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    1N5822RLG Cut Strips 963 1
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    Newark 1N5822RLG Bulk 1,990 1
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    RS 1N5822RLG Bulk 10
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    Rochester Electronics 1N5822RLG 207 1
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    TME 1N5822RLG 1,012 1
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    Richardson RFPD 1N5822RLG 4,500
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    Avnet Asia 1N5822RLG 34 Weeks 6,000
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    Avnet Silica 1N5822RLG 29 Weeks 1,500
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    Component Electronics, Inc 1N5822RLG 3,700
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    EBV Elektronik 1N5822RLG 1,500 30 Weeks 1,500
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    Maritex 1N5822RLG 3,720 1
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    Win Source Electronics 1N5822RLG 15,000
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    Microchip Technology Inc JANTX1N5822US

    Schottky Diode - JANTX Level - 40V - 3A - 500mV@3A Forward (Vf) (Max)@If - Fast Recovery =< 500ns > 200mA (Io) - B SQ-MELF Package - Surface Mount.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics JANTX1N5822US 8
    • 1 $61.01
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    Avnet Silica JANTX1N5822US 22 Weeks 1
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    EBV Elektronik JANTX1N5822US 21 Weeks 1
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    Microchip Technology Inc 1N5822

    40V 3A Small-Signal Schottky THT
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    Master Electronics 1N5822
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    Avnet Americas 1N5822 Bulk 20 Weeks 100
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    Newark 1N5822 Bulk 500
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    Microchip Technology Inc 1N5822 28 Weeks
    • 1 $14.04
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    Onlinecomponents.com 1N5822
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    Maritex 1N5822 2,848 1
    • 1 $0.14
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    • 100 $0.13
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    Microchip Technology Inc JANTXV1N5822US/TR

    40V Small-Signal Schottky SQ THT TR
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    Master Electronics JANTXV1N5822US/TR
    • 1 -
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    • 100 $106.43
    • 1000 $106.43
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    Avnet Americas JANTXV1N5822US/TR Tape & Reel 20 Weeks 100
    • 1 -
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    • 100 $110.81
    • 1000 $106.55
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    EBV Elektronik JANTXV1N5822US/TR 21 Weeks 1
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    Microchip Technology Inc JANTX1N5822/TR

    40V Small-Signal Schottky THT TR
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    Master Electronics JANTX1N5822/TR
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    1N5822 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N5822 data sheet

    Abstract: 1N5820 1N5820-1N5822 1N5821 1N5822 1n58201
    Contextual Info: 1N5820 - 1N5822 3.0A SCHOTTKY BARRIER RECTIFIERS Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop


    Original
    1n58201n5822do-201admil-std-202+5ds230031n5820-1n58221n5822 data sheet1n58211n58201 PDF

    Contextual Info: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2


    Original
    1n58201n582222-a102mil-std-750d+4method-1051method-1056method-4066-21000hrs PDF

    Contextual Info: 1N5820 thru 1N5822 REVERSE VOLTAGE FORWARD CURRENT SCHOTTKY BARRIER RECTIFIERS -20 to 40 Volts -3.0 Amperes D O -27 FEATURES • Metal-Semiconductor junction with guard ring • Expitaxial construction • Low forward voltage drop • High current capability


    OCR Scan
    1n58201n5822do-27 PDF

    Contextual Info: DIGITRON SEMICONDUCTORS 1N5820-1N5822 3 AMP SCHOTTKY RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MECHANICAL CHARACTERISTICS


    Original
    1n5820-1n5822mil-prf-195001n58201n5821+11n5822 PDF

    Contextual Info: MCC TM Micro Commercial Components 1N5820 THRU 1N5822   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates


    Original
    1n58201n5822do-201ad1n5821 PDF

    1N5820

    Abstract: 1N5821 1N5822
    Contextual Info: 1N5820 - 1N5822 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop


    Original
    1n58201n5822do-201adul94v-o+2mil-std-2021n5821 PDF

    15KV

    Abstract: 1N5820 1N5821 1N5822-E
    Contextual Info: LESHAN RADIO COMPANY, LTD. 1N5820-E thru 1N5822-E 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * * Reverse Voltage 20 to 40V Forward Current 3.0A Flammability Classification 94V-0 Low power loss,high efficiency


    Original
    1n5820-e1n5822-edo-201admil-std-750+450mvp-p15kv1n58201n5821 PDF

    1N5821

    Abstract: DB-113
    Contextual Info: 1N5821 THRU 1N5822 3.0AMP. Schottky Barrier Rectifier VOLTAGE:30 TO 40V CURRENT:3.0A AXIAL LEAD DO-201AD Specification Features: Case: Epoxy, Molded DEVICE MARKING DIAGRAM Weight:1.2Gram Approximately 1N582X KEL High current capability,Low Forward Voltage Drop


    Original
    1n58211n5822do-201ad1n582x+2db-111db-113 PDF

    1N5822U

    Contextual Info: 1N5822U Aerospace 40 V power Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B


    Original
    1n5822uescc5000docid16007 PDF

    1N5822

    Abstract: 1N5820 1N5821
    Contextual Info: 1N5820 THRU 1N5822 3 AMPERE SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Amperes FEATURES l High surge current capability l Plastic package has Underwriters Laboratory DO-201AD Flammability Classification 94V-O Utilizing l Flame Retardant Epoxy Molding Compound


    Original
    1n58201n5822do-201admil-s-19500/228+2mil-std-2021n5821 PDF

    1N5820

    Abstract: 1N5821 1N5822
    Contextual Info: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency


    Original
    1n58201n5822do-201admil-std-750+2300us1n5821 PDF

    5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

    Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
    Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original
    1n58201n58211n58221n5820/d+95.0 amp. schottky bridge rectifiersfull wave rectifier circuitshalf bridge llc inverterpower diode10 ampere schottky bridgerectifier diode assemblythermal runaway in rectifierdiode t283 diodes 3 phase half-wave rectifier PDF

    1N5822

    Abstract: 1N5820 1N5822 data sheet 1N5821
    Contextual Info: 1N5820 thru 1N5822 SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20-40 VOLTS Mechanical Data: *Case:JEDEC DO-201AD Molded Plastic *Polarity:Colar Band Denotes Cathode *Weight:1.1grams *Mounting Positon: Any DO-201AD DO-201AD Outline Dimensions DO-201AD 25.40 WEITRON


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    1n58201n5822do-201ad1n5821+11n5822 data sheet PDF

    1N5822 data sheet

    Abstract: 1N5820 1N5821 1N5822
    Contextual Info: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes FEATURES DO-201AD 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0


    Original
    1n58201n5822do-201ad50mvp-p+21n5822 data sheet1n5821 PDF

    Contextual Info: 1N5820 thru 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • • • • • • • • DO-201AD PRIMARY CHARACTERISTICS IF AV 3.0 A VRRM 20 V, 30 V, 40 V IFSM 80 A VF 0.475 V, 0.500 V, 0.525 V TJ max. 125 °C Guardring for overvoltage protection


    Original
    1n58201n58222002/95/ec2002/96/ec+2do-201ad08-apr-05 PDF

    1N5822 PACKAGE

    Abstract: 1N5820 1N5821 1N5822
    Contextual Info: 1N 5820 TH RU 1N5822 3 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Amperes _ FEATURES_ D O -201 A D • High surge cu rre n t capability. • Plastic package has U nderw riters Laboratory FlammabHity C lassification 9 4 V -0 utilizing


    OCR Scan
    1n58201n5822do-201d0-201+4mil-std-2021n5820_1n58211n5822 package PDF

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


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    qml-9500-191n1124a1n37681n3821a+161n4562b1n4565a1n5819-11n58221n67611n6761-1cczl2n6193u3microsemi 1n6761-1transistor 2n40331n1614 diodes1n6642ub2n2222a cdwr1n1742am19500/483transistor 2n3251 PDF

    Contextual Info: 1N5822+JANTXV Diodes General Purpose Schottky Rectifier Military/High-RelY I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)90Ô V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.80¥ V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)9.0


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    1n5822voltage40voltage950mcurrent20m+1styledo-204ae PDF

    Contextual Info: 1N5820 thru 1N5822 Schottky Barrier Rectifiers Reverse Voltage 20 to 40V Forward Current 3.0A Feature & Dimensions * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage high frequency inverters,


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    1n58201n5822do-201admil-std-750+2038ozd0-201ad PDF

    1n5822ub1

    Abstract: 1n5822U01B 1N5822U 1n5822u02b STMicroelectronics marking code date dip
    Contextual Info: 1N5822U Aerospace 40 V power Schottky rectifier Features K A • Aerospace applications ■ Surface mount hermetic package ■ High thermal conductivity materials ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching


    Original
    1n5822uescc50001n5822ub11n5822u01b+21n5822u02bstmicroelectronics marking code date dip PDF

    1N5821

    Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1n58201n58211n5822surfa5820 PDF

    Contextual Info: 1N5820 thru 1N5822 3.0 Amps. Schottky Barrier Rectifiers Voltage Range 20 to 40 Volts Forward Current 3.0 Amperes Features ‹ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ‹ Low power loss, high efficiency ‹ For use in low voltage high frequency inverters, free wheeling,


    Original
    1n58201n5822do-201admil-std-750+2100oc300us PDF

    1N5822 data sheet

    Abstract: 1N5820 1N5821 1N5822 JESD22-B102D J-STD-002B
    Contextual Info: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation


    Original
    1n58201n58211n5822do-201ad+62002/95/ec2002/96/ec08-apr-051n5822 data sheetjesd22-b102dj-std-002b PDF

    Contextual Info: 1N5820 - 1N5822 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop


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    1n58201n5822do-201adul94v-o+2mil-std-2021n5821 PDF