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2N543 Datasheets (213)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N543	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF	393.54KB	5
2N543	General Diode	Transistor Selection Guide	Scan	PDF	608.68KB	10
2N543	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF	75.06KB	1
2N543	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	95.71KB	1
2N543	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	92.1KB	1
2N543	Unknown	Vintage Transistor Datasheets	Scan	PDF	50.58KB	1
2N543	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.92KB	1
2N543	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	45.73KB	1
2N543	Unknown	GE Transistor Specifications	Scan	PDF	22.15KB	1
2N543	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	169.53KB	1
2N543	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.87KB	1
2N5430	Central Semiconductor	Leaded Power Transistor General Purpose - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=7 / Hfe=60-240 / fT(Hz)=30M / Pwr(W)=40	Original	PDF	50.39KB	1
2N5430	Semelab	Medium Power NPN Silicon Transistor - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=7 / Hfe=60-240 / fT(Hz)=30M / Pwr(W)=40	Original	PDF	15.67KB	2
2N5430	API Electronics	TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39	Scan	PDF	226.44KB	2

2N5430	API Electronics	Short form transistor data	Short Form	PDF	80.96KB	1
2N5430	API Electronics	Short form transistor data	Short Form	PDF	238.23KB	2
2N5430	Crimson Semiconductor	EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors	Scan	PDF	41.93KB	1
2N5430	Diode Transistor	TO-3 / Various Transistor Selection Guide	Scan	PDF	85.47KB	1
2N5430	Diode Transistor	Transistor Short Form Data - TO-3	Scan	PDF	86.13KB	1
2N5430	General Transistor	NPN Power Transistors	Scan	PDF	188KB	2

...

2N543 Price and Stock

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Microchip Technology Inc 2N5430 Transistor - NPN Silicon - Medium Power - 100V - 7A - 20 MHz-
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	2N5430					1 - 10 - 100 $43.69 1000 $43.69 10000 $43.69	Buy Now
Avnet Americas	2N5430	Bulk		48 Weeks	100	1 - 10 - 100 $48.89 1000 $45.13 10000 $44.56	Buy Now
Newark	2N5430	Bulk			500	1 - 10 - 100 - 1000 $45.76 10000 $45.76	Buy Now
Microchip Technology Inc	2N5430		374	28 Weeks		1 $49.29 10 $49.29 100 $49.29 1000 $49.29 10000 $49.29	Buy Now
Onlinecomponents.com	2N5430					1 - 10 - 100 $43.69 1000 $43.69 10000 $43.69	Buy Now

Avnet Silica	2N5430			38 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	2N5430			49 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Central Semiconductor Corp 2N5430 - Rail/Tube (Alt: 2N5430)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N5430	Tube		8 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Central Semiconductor Corp 2N5431 SILICON UNIJUNCTION TRANSISTOR FX:(201)37M960
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N5431		35			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Solid State Inc 2N5430 Trans GP BJT NPN 100V 7A 40000mW 3-Pin(2+Tab) TO-66
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N5430		19			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix 2N5432 Trans JFET N-CH 400mA Si 3-Pin TO-52
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N5432		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2N543 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Current Regulator Diodes Abstract: NIP1CHP Contextual Info: M ID fT-Siliconix J .Æ * * 1• in c o rp o ra te d N-Channel JFET Current Regulator Diodes_ TYPE PACKAGE DEVICE Single TO-92 TO-226AA • Single SOT-23 • SST108, SST109, SST110 Single TO-52 (TO-206AC) • 2N5432, 2N5433, 2N5434 Single Chip	OCR Scan	o-226aa ot-23 o-206ac sst108 +7sst109 sst110 2n5432 2n5433 2n5434 current regulator diodes nip1chp	PDF
2N5432 Abstract: 2N5433 2N5434 Contextual Info: 2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 FEATURES BENEFITS APPLICATIONS	Original	2n5432/5433/5434 2n5432 2n5433 2n5434 +2s-04028--rev 04-jun-01	PDF
2N5434 Abstract: 2N5432 2N5433 teledyne crystalonics Contextual Info: ULTRA LOW Ro n SWITCHING 2N5432 2N5433 2N5434 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 445, PG. 58 • L O W R d s - 5 Ohms • LOWC q d — 15pfd ELECTRICAL DATA abso lute m a x im u m PARAM ETER r a t in g s SYM BOL U N IT S	OCR Scan	2n5432 2n5433 2n5434 teledyne crystalonics	PDF
2N5430X Contextual Info: 2N5430X Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	2n5430x o213aa 1-aug-02	PDF
2N3568 Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224 Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545	OCR Scan	2n329a 2n332 2n333 2n334 +162n335 2n336 2n337 2n338 2n339 2n340 2n3568 2n3569 2n702 2n2406 2n2539 2n2407 2n3565 2n3638 2n1470 2n2224	PDF
2N5434 Abstract: S 5018 2N5432 2N5433 X2N5432 X2N5433 X2N5434 Contextual Info: CALOGIC CORP 4flE D • 000032b <3 ■ CGC N-Channel JFET Switch CORPORATION vJ T -3 S -Z S ’ 2N5432- 2N5434 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • LOW fd*<on) • Excellent Switching • Low Cutoff Current Gate-Source Voltage. -25V	OCR Scan	4432e 000032b 2n5432-2n5434 100ma +12400ma 10sec 300ns 4432s 00d0357 2n5434 s 5018 2n5432 2n5433 x2n5432 x2n5433 x2n5434	PDF
2N5432 Abstract: 2N5434 5433 2N5433 Contextual Info: 2N5432/5433/5434 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 Features Benefits Applications D D D D D D D D	Original	2n5432/5433/5434 2n5432 2n5433 2n5434 +3descri10 s-52424--rev 5433	PDF
2N5629 Contextual Info: Search Results Part number search for devices beginning "2N5430" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5430 NPN TO66 100V 7A 60 240 2/2 30MHz	Original	2n5430 2n5430x 30mhz 2n5581 +32n5581-jqr-b 250mhz 2n5629	PDF
Contextual Info: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 JFET Sw it ch e s P/ N 2N5114 2N5115 2N5116 2N5434 J108 J109 J110 J111 J112 J113 J174 J175 J176 J177 PN4391 PN4392 PN4393 SST111 SST112 SST113 SST108 SST109 SST110 SST174	Original	2n5114 2n5115 2n5116 2n5434 +6pn4391 pn4392 pn4393 sst111 sst112 sst113	PDF
Contextual Info: N-Channel Metal Can JFET’s Part No. @ VD S & ID RDS on Min. Max. (V) (V) (V) (V) (nA) (Ω) 4.0 10.0 5 3.0 3.0 9.0 5 3.0 1.0 4.0 5 3.0 2N5432 2N5433 VP BVGSS Min. 25 2N5434 @ ID Ciss Max. Crss Max. to n Max. toff Max. Package (mA) (pF) (pF) (ns) (ns) Bulk	Original	2n5432 2n5433 2n5434 2n3686 +62n3822 2n4118a 2n4416a 2n3684 2n5197 2n6485	PDF
Contextual Info: 2N5430X Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	2n5430x o213aa 30-jul-02	PDF
Contextual Info: 2N5435 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)60 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2n5435 time12u	PDF
2N3492 Abstract: 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879 Contextual Info: Device Type 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N5427 2N5428 2N5429 2N5430 2N6077 2N6078 2N6079 VCEO V 75 60 80 100 60 80 100 200 250 300 80 80 100 100 275 250 350 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/80 4.0	Original	2n3879 2n3487 2n3488 2n3489 +72n3490 2n3491 2n3492 2n5387 2n5388 2n5389 to61	PDF
145S2 Abstract: 2N5432 2N5433 2N5434 616tf Contextual Info: designed fo r a . S ilic o n ix Performance Curves NIP See Section 5 B EN EF IT S 'D off < 200 PA • Highspeed *d(on) < 4 ns • Low Noise Audio-Frequency Ampli fication en < 2 nVA/Hz at 1 kHz Typical •A B SO LU T E MAXIMUM RATIN GS (25°C) 2N5434	OCR Scan	100ma -65to 2n54n-source -10ma +8145s2 2n5432i ni2n5433 2nb434 2n5432 2n5433 2n5434 616tf	PDF

motorola eb20 Abstract: silicon unijunction transistor 2n5431 Contextual Info: motorola sc diodes/opto I sse d • t.3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW DESIGNS 1 ^3 7 ^1 2N5431 P N U nijunction T ran sisto r Silicon Annular Unijunction Transistor . i characterized prim arily for lo w interbase-voltage operation in se n sin g, pulse	OCR Scan	2n5431 vf32b1charac t-37-ji motorola eb20 +1silicon unijunction transistor	PDF
Siliconix N-Channel JFETs Abstract: 2N5432 2N5433 2N5434 Contextual Info: 2N5432/5433/5434 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 Features Benefits Applications D D D D D D D D	Original	2n5432/5433/5434 2n5432 2n5433 2n5434 +3descri10 p-37407--rev siliconix n-channel jfets	PDF
Unit junction transistor UJT Abstract: ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc Contextual Info: motorola sc I diodes/opto sse d • ti3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW D ESIG N S 1^37^1 2N5431 P N U n ijunction T ra n sisto r Silico n A nnular Unijunction Transistor . i characterized primarily for low interbase-voltage operation in sensing, pulse	OCR Scan	b3b72ss 2n5431 2a-01 10fla +9unit junction transistor ujt ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator characteristics of ujt unijunction eb20 transistor wc	PDF
Contextual Info: 2N5436 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)110 I(C) Max. (A)60 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2n5436 time12u	PDF
Contextual Info: 2N543 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)25m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)5.0m	Original	2n543 freq10m	PDF
2n5434 Abstract: 2n5432 Contextual Info: N-Channel JFET Switch CORPORATION 2N5432 – 2N5434 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted • Low rds(on) • Excellent Switching • Low Cutoff Current Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V	Original	2n5432 2n5434 100ma 400ma +6-65oc 200oc -55oc 150oc 10sec 300oc	PDF
Contextual Info: 2N5434 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A)400m I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)200p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)	Original	2n5434	PDF
2N5430 Abstract: IC 386 Contextual Info: SEME 2N5430 LAB MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. Designed for switching and wide - band amplifier applications 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 14.48 (0.570)	Original	2n5430 2n5430cecc 200ma ic 386	PDF
2N5436 Abstract: 2N5485 2N5485 MICRO ELECTRONICS 2N5434 2N5484 2N5486 2N5484 MICRO ELECTRONICS Contextual Info: 2N5484 2N5485 2N5486 2N5434, 2N5485 and 2N5486 are N-Channel Junction Pfasttc T O -9 2 Field Effect designed Transistors. for oscillators VHF / UHF and They are amplifiers, analog mainly mixers, switches. Bottom View Source & O ta in interchengeebie ABSOLUTE MAXIMUM RATINGS	OCR Scan	2n5484 2n5485 2n5486 2n5434 +42n5436 360mw 2n5485 micro electronics 2n5484 micro electronics	PDF
2N5432 Abstract: 2N5433 2N5434 Contextual Info: 2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 FEATURES BENEFITS APPLICATIONS	Original	2n5432/5433/5434 2n5432 2n5433 2n5434 +108-apr-05	PDF

2N543 Search Results

2N543 Datasheets (213)

2N543 Price and Stock

Microchip Technology Inc 2N5430

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Central Semiconductor Corp 2N5431

Solid State Inc 2N5430

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2N543 Datasheets Context Search

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motorola eb20

Siliconix N-Channel JFETs

Unit junction transistor UJT

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