UNIJUNCTION Search Results

2N2160

Contextual Info: TYPES n 2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T I N N O . D L S 68318 9, O C T O B E R 1 9 6 2 - R E V I S E D M A Y 1968 Designed for Medium-Power Switching, Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance

2n2646 2n2647

Abstract: 2N2646 n2646
Contextual Info: TYPES 2N2646, 2N2647 P-N PIANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 5 9 , M A R C H 1 9 7 3 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF M ILITA R Y AND INDUSTRIAL APPLICATIONS • Planar Process Ensures Low Leakage, Low Drive-Current

applications of ujt with circuits

Abstract: UJT 2N491 applications of ujt UJT specification ujt firing circuits of scr ujt transistor 2N489 UJT 2N492 Germanium Power Devices TRANSISTOR 2N492
Contextual Info: Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR Specifications S IÚCON TYPES I Silicon Unijunction T ra n ­ sistors are three-term inal devices having a stable “ N ” type negative resistance characteristic over a wide tem perature range. A stable peak point

2N6116

Abstract: 2N6118 2N6117 2n6116 motorola Unijunction motorola programmable unijunction
Contextual Info: MOTOROLA SC DIODES/OPTO S5E D b3b7255 OQflOltS 1 • 2N6116 2N6117 2N6118 Silicon Program m able U nijunction Transistors . . . d e sign e d to enable the engineer to " p r o g r a m " unijunction characteristics such a s Rbb> V i lv> and Ip ^ m erely selecting tw o resistor values, Application includes

2N4891

Abstract: 2N4893 2N4894 equivalent 2n4891 2N4892 2N4891 unijunction 2N4894 equivalent MAV-4
Contextual Info: TYPES 2N4891 THRU 2N4894 P-N PLANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . O L-S 6 8 9 7 7 6 , J A N U A R Y 1967 PLAN AR UNIJUNCTION S IL E C T t TRANSISTORS^ FOR APPLICATIO N IN SCR D R IV E R S , MOTOR-SPEED CONTROLS, TIM ER S, W AVEFORM G EN ERA TO R S, M U LT IV IB R A TO R S , RING CO UN TERS,

D13T1

Contextual Info: DIGITRON SEMICONDUCTORS D13T1-D13T2 PROGRAMMABLE UNIJUNCTION TRANSISTORS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Contextual Info: DIGITRON SEMICONDUCTORS 2N6027-2N6028 PROGRAMMABLE UNIJUNCTION TRANSISTORS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Contextual Info: DIGITRON SEMICONDUCTORS 2N6116-2N6118 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

2N6027

Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two

NTE6400

Abstract: NTE6400A rbbo unijunction transistor
Contextual Info: NTE6400 & NTE6400A Unijunction Transistor TO39 Type Package Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable “N” type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,

Contextual Info: DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 350 mW IE 70 mA ie 2 Amps Emitter reverse voltage VB2E 60 Volts Interbase voltage

2N2646

Abstract: scr firing scr firing circuit D5J37 2N2646-47
Contextual Info: Silicon D5J37 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. ABSOLUTE MAXIMUM RATINGS: 25°C (Note 1) Pow er D issipation RMS Em itter C urrent Peak Em itter C urrent 300 mw 50 ma 2 amperes 30 volts

MEU21

Abstract: BRY39 2N6027 2N6028 BR101 BRY56 BRY56A MEU22
Contextual Info: Special Devices PRO GRAM M ABLE UNIJUNCTION TR A N SIST O R S M A X I M U M R A T IN G S TYPE NO. CASE Pd mW 'a Im A ) VF (V ) BV GKF (V ) max 'f Im A ) VT 'p 'v 'g (V ) <jUA) (jUA) <nA) (nA) max max max max max 'g ks ao BRY56 BRY56A T O -9 2 B A T O -9 2 B A

2N2646-47

Abstract: D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN
Contextual Info: Silicon Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ra tin g s: 2 5 ° C Pow er D issipation (Note 1) RMS Em itter C urrent 300 mW 50 mA 2Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘

MPU6027

Abstract: thyristor applications nt 407 f MPU6028 C1128
Contextual Info: MPU6027, MPU6028 SILICON SILIC O N P R O G R A M M A B L E UNIJUNCTION T R A N SIST O R S 40 V O L T S 375 mW SIL IC O N P R O G R A M M A B L E U NIJUNCTION T R A N SIS T O R S . . . designed to enable the engineer to "p ro gra m " unijunction char­ acteristics such as R 8 B - 7?- *V ' anc* *P &Y merely selecting two resistor

2n2646 equivalent

Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can

2n2646 equivalent

Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

2N4983

Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can

2N2646

Abstract: High power SCR 2n2647 SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr"
Contextual Info: 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.

Unijunction transistor 2N2646 of

Abstract: 2N2646P
Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bbSB'lBl DDEfllDM 77b « A P X Philips Semiconductors 2N2646 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E DATA SYM BOL PARAM ETER

2N6028 Application Note

Abstract: 2N6027 PUT 2N6027 pin diagram equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram 2N6028 2N6028 CIRCUIT PUT 2N6027 unijunction application note 2N6027-2N6028
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting

bry39

Abstract: BRY39 circuit
Contextual Info: N AMER PHILIPS/MSCRETE bTE 3> bb53R31 0057635 R6T Philips Semiconductors Data sheet status Preliminary specification date of Issue December 1990 BRY39 Programmable unijunction transistor QUICK REFERENCE DATA PARAMETER PIN cathode 2 cathode gate 3 anode gate

2N2422

Contextual Info: 2N2422 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2422 is a Unijunction Transistor, Designed for General Purpose Pulse, Timing, Sense and T rigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A (PULSED) m 60 V o V Ic Pd is s 360 mW @ Te $ 25 °C

2n1671a

Abstract: unijunction transistor
Contextual Info: 2N1671A SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671A is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications PACKAGE STYLE T-18 MOD MAXIMUM RATINGS 2.0 A V o m Ic Pd is s (PULSED) 30 V 450 mW @ Te = 25 0C