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    3N84 Search Results

    3N84 Datasheets (10)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    3N84
    General Electric Semiconductor Data Book 1971 Scan PDF 267.09KB 1
    3N84
    General Electric Semiconductor Data Handbook 1977 Scan PDF 2.89MB 5
    3N84
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 72.9KB 1
    3N84
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 39.72KB 1
    3N84
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 29.6KB 1
    3N84
    Unknown GE Transistor Specifications Scan PDF 21.36KB 1
    3N84
    Unknown Short Form Datasheet and Cross Reference Data Short Form PDF 95.4KB 1
    3N84
    Unknown Cross Reference Datasheet Scan PDF 31.84KB 1
    3N84
    Silec Semiconductors Shortform Data Book 1976 Short Form PDF 51.84KB 1
    3N841
    Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF 60.43KB 1
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    3N84 Price and Stock

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    Vishay Intertechnologies RSK33N84K5F

    - Waffle Pack (Alt: RSK33N84K5F)
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    Avnet Americas RSK33N84K5F Waffle Pack 15 Weeks 100
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    • 1000 $10.97
    • 10000 $10.43
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    Mouser Electronics RSK33N84K5F
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    • 1000 $11.43
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    Newark RSK33N84K5F Bulk 100
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    • 100 $12.16
    • 1000 $11.19
    • 10000 $10.70
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    SiTime Corporation SIT1408BI-12-33N-84.000000G

    OSCILLATOR, SIT1408, -40 to 85C, 2520, 25ppm, 3.3V, 84MHz, OE, 250 pcs T&R 8 mm - Tape and Reel (Alt: SIT1408BI-12-33N-84.000000G)
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    Avnet Americas SIT1408BI-12-33N-84.000000G Tape & Reel 6 Weeks 250
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    SiTime Corporation SIT1408BI-12-33N-84.000000D

    OSCILLATOR, SIT1408, -40 to 85C, 2520, 25ppm, 3.3V, 84MHz, OE, T&R - Tape and Reel (Alt: SIT1408BI-12-33N-84.000000D)
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    Avnet Americas SIT1408BI-12-33N-84.000000D Tape & Reel 6 Weeks 3,000
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    SiTime Corporation SIT1408BI-12-33N-84.000000E

    OSCILLATOR, SIT1408, -40 to 85C, 2520, 25ppm, 3.3V, 84MHz, OE, 1k pcs T&R 8 mm - Tape and Reel (Alt: SIT1408BI-12-33N-84.000000E)
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    Avnet Americas SIT1408BI-12-33N-84.000000E Tape & Reel 6 Weeks 1,000
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    onsemi N84C162WD42TG

    Supervisory Circuits CPU SUP WITH 16K EEPROM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics N84C162WD42TG 3,000
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    3N84 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3n84

    Abstract: D29A4 C13P ring COUNTER SCR AUTOMOTIVE APPLICATIONS scr triggering 2N1770-8 C13F C13Y scs thyristor
    Contextual Info: SCR I e« I C11 S E R IE S SE E 2N1770-8 PAG E 322 The General Electric C13 Complementary Silicon Controlled Rectifier CSCR is a threeterminal, planar-passivated PN PN device in the standard, low-cost plastic TO-98 JE D E C pack­ age. As CSCR’s, the C13P and the C13Y offer greater flexibility in circuit design through the


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    2n1770-8d29a42n34i53n84+7c13pring counterscr automotive applicationsscr triggeringc13fc13yscs thyristor PDF

    3N84

    Abstract: 2N4988 RCA SCR 2n 2N4991 2N327 3N81 2N4984 IN4I48 3N85 40v neon lamp
    Contextual Info: SILICON U N I L A T E R A L AND B I L A T E R A L SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of


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    2nm462n3273n842n4988+7rca scr 2n2n49913n812n4984in4i483n8540v neon lamp PDF

    2n2646 equivalent

    Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan
    2n489-4942n2646-472n49872n4990+122n4986in5059-2n4990sus-2n49862n2646 equivalent3n842n4987-90sus 2n49872n4987 equivalentge motor capacitor cross referenceequivalent transistor of 2n6027circuits by using 2n6027 PDF

    2N4983

    Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan
    2n489-4942n2646-47s-2n49832n4986+122n49632n4983---15vtransistor 2n4983general electric c22bcircuits by using 2n60272n2646 equivalentge c22b2n4991sbs thyristor2n602bge motor capacitor cross reference PDF

    IR2E31A

    Abstract: IR2E27A IR2E09 Sharp IR2E27A IR2E27A SHARP IR2e01 IR2E12 Sharp IR2E09 1R2E31 IR2E27
    Contextual Info: Alphanumeric Index Alphanumeric Index Model No. IR2339 IR2339.V < IR2402 Page Model No. Page L78 178 101 < 'lR2C30N 1R2C32A 83 { IR2403 <! IR2405 56 38 < IR2406 608 608 < 1R2406G IR2408 ^ IR2410 [R2411 C IR2412A L IR2415 i IR2416 1, IR2419 / IR2422 Z IR2425


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    ir2339ir2402lr2c30n1r2c32a+15jr2c33ir3n34ir2403ir2405ir2406ir2e31air2e27air2e09sharp ir2e27air2e27a sharpir2e01ir2e12sharp ir2e091r2e31ir2e27 PDF

    2N6021

    Abstract: 2N4983 D5K2 3N83 D13H1 3N81 GE 2N6027 2N2160 2N2646 CIRCUIT 3N85
    Contextual Info: SPECIAL SILICON PRODUCTS SILICON CONTROL SWITCHES— SCS 28 Cutoff Charac­ teristics GE Type V ak !r- Anode Voltage Slocking (V) Continuous DC Forward Current (rnA) Peak Recurrent Forward Current (A) Cathode Gate Peak Current (m A) ( a 1 1OO//S0C Con­


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    100//s800li0v-25v2n6021+92n4983d5k23n83d13h13n81ge 2n60272n21602n2646 circuit3n85 PDF

    3n84

    Abstract: 3N81 TB4140V CG2-22-10 CG2-22-14 CG2-25-10 TB4100V TB4120V TB4160V 3N82
    Contextual Info: THYRISTORS , AT Caractéristiques électriques Electrical characteristics Valeurs limites Absolute max. ratings V DWM TYPES 'o A V RWM (V) ITSM V RSM (10ms) (V) (A) lH V GT (V) 'GT ImA) rg k= V TM oo Im A ] (V) 345 A eff (rms) / tcase=80°C t(vj)=125°C l2t=80.000A2s


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    000a2cg2-22-cg2-22-10cg2-22-14+1010kii200ma3n843n81tb4140vcg2-25-10tb4100vtb4120vtb4160v3n82 PDF

    2n2646 equivalent

    Abstract: 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


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    2n489-4942n2646-472n2646 equivalent2n4991+82n4991 equivalentsilicon unilateral switchsbs thyristor 2n49912n2646equivalent transistor of 2n6027low voltage scrthyristor a2f2n4985 PDF

    3N81

    Abstract: IN4148 anode cathode 2N4983 3N84 eto thyristor thyristor igc TRANSISTOR BO 344 2N4987 2N4985 thyristor eto
    Contextual Info: SILICON UNILATERAL AND BILATERAL SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of


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    3n81in4148 anode cathode2n49833n84+6eto thyristorthyristor igctransistor bo 3442n49872n4985thyristor eto PDF

    2N2646 equivalent

    Abstract: SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan
    2n489-4942n2646-472n49882n2647+12022-/ufsus-2n49892n4989j2n26472n2646 equivalent2n49913n813n84d5k220 amp 800 volt triac2n4983equivalent 2n1671 PDF

    2N4985

    Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan
    2n489-4942n2646-47gec32u10khz+122n4984i2n2647-2n49852n49852n2646 cross reference2n2646 equivalent2n26462n49832n4991ge scr cross reference2n4992equivalent 2n1671 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214 PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+62n3392n3201transistor bf 175germanium transistorepitaxial mesa2n241 PDF

    2n2646 equivalent

    Abstract: 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


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    2n489-4942n2646-472n2646 equivalent2n2646+8triac phase control2n602b2n4991equivalent 2n1671four-layer diodesbs thyristor2n49873n84 PDF

    GE TRIAC SC40B

    Abstract: 2n4992 3N84 SC40B transistor 2n4992 2N4992 equivalent 2n2646 equivalent triac 9012 SBS thyristor Triac 50 amp 250 volt
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can


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    2n489-4942n2646-472n4992sc40b+8ge triac sc40b3n84transistor 2n49922n4992 equivalent2n2646 equivalenttriac 9012sbs thyristortriac 50 amp 250 volt PDF

    3N83

    Abstract: 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987
    Contextual Info: SILICON U NILATERAL AND BILATERAL SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi­ mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of


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    20/is/3n833n833n84+8transistor 3n83pin configuration npn transistor 9012 pnp40v neon lamppnp monolithic transistor pairtransistor pnp 12v 1a continuous current peakpin configuration npn transistor 9012 npnnixie display2n4987 PDF

    3n84

    Abstract: 2N4983 2N4985 SCR nomenclature, General electric 2n4990 scr 6A 2N4987 2N4984 GE 2N4992 3n81
    Contextual Info: SILICON U N I L A T E R A L A N D B I L A T E R A L SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi­ mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of


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    200fiin4i48in4i46500pps+103n842n49832n4985scr nomenclature, general electric2n4990scr 6a2n49872n4984ge 2n49923n81 PDF

    E355D

    Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
    Contextual Info: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20


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    e355dmikroelektronik rfta283db3370+6d100dinformation applikationb083dsn28654nsn28654a277d PDF

    AC127

    Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
    Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any


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    2n24a2n34a2n38a2n43a+162n44a2n59c2n60a2n61a2n61boc77-309ac127cv7089ac1252sb415oc71ad161cv8615hj17dad1422n3278 PDF