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    3N85 Search Results

    3N85 Datasheets (10)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    3N85
    General Electric Semiconductor Data Book 1971 Scan PDF 267.09KB 1
    3N85
    General Electric Semiconductor Data Handbook 1977 Scan PDF 2.89MB 5
    3N85
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 72.9KB 1
    3N85
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 39.72KB 1
    3N85
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 29.6KB 1
    3N85
    Unknown GE Transistor Specifications Scan PDF 21.36KB 1
    3N85
    Unknown Short Form Datasheet and Cross Reference Data Short Form PDF 95.4KB 1
    3N85
    Unknown Cross Reference Datasheet Scan PDF 31.84KB 1
    3N85
    Silec Semiconductors Shortform Data Book 1976 Short Form PDF 51.84KB 1
    3N850
    Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF 60.43KB 1
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    3N85 Price and Stock

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    STMicroelectronics STW23N85K5

    Transistor: N-MOSFET; MDmesh™ K5; unipolar; 850V; 12.4A; Idm: 250A
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    onsemi NB3N853501EDTR2G

    Input Mux - 2:1, LVTTL / LVCMOS, 3.3 V, Fanout Buffer - 1:4 LVPECL - Tape and Reel (Alt: NB3N853501EDTR2G)
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    Avnet Americas () NB3N853501EDTR2G Tape & Reel 2,500
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    NB3N853501EDTR2G Tape & Reel 33 Weeks 2,500
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    Mouser Electronics NB3N853501EDTR2G
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    Newark NB3N853501EDTR2G Tape & Reel 2,500
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    Rochester Electronics NB3N853501EDTR2G 247,325 1
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    Flip Electronics NB3N853501EDTR2G 293,647
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    onsemi NB3N853531EDTR2G

    Xtal Input or LVTTL / LVCMOS Input Mux - 2:1, 3.3 V, Fanout Buffer- 1:4 LVPECL - Tape and Reel (Alt: NB3N853531EDTR2G)
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    Avnet Americas NB3N853531EDTR2G Tape & Reel 21 Weeks 2,500
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    Mouser Electronics NB3N853531EDTR2G 2,490
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    Newark () NB3N853531EDTR2G Tape & Reel 2,500
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    NB3N853531EDTR2G Cut Tape 1
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    NB3N853531EDTR2G Tape & Reel 10
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    Rochester Electronics NB3N853531EDTR2G 51,236 1
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    Kyocera AVX Components AL05A3N85JTR

    AIR CORE INDUCTORS - Tape and Reel (Alt: AL05A3N85JTR)
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    Kyocera AVX Components AL05A3N85KTR

    AIR CORE INDUCTORS - Tape and Reel (Alt: AL05A3N85KTR)
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    Avnet Americas AL05A3N85KTR Tape & Reel 16 Weeks 4,000
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    3N85 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3N84

    Abstract: 2N4988 RCA SCR 2n 2N4991 2N327 3N81 2N4984 IN4I48 3N85 40v neon lamp
    Contextual Info: SILICON U N I L A T E R A L AND B I L A T E R A L SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of


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    2nm462n3273n842n4988+7rca scr 2n2n49913n812n4984in4i483n8540v neon lamp PDF

    2n2646 equivalent

    Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan
    2n489-4942n2646-472n49872n4990+122n4986in5059-2n4990sus-2n49862n2646 equivalent3n842n4987-90sus 2n49872n4987 equivalentge motor capacitor cross referenceequivalent transistor of 2n6027circuits by using 2n6027 PDF

    2N4983

    Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan
    2n489-4942n2646-47s-2n49832n4986+122n49632n4983---15vtransistor 2n4983general electric c22bcircuits by using 2n60272n2646 equivalentge c22b2n4991sbs thyristor2n602bge motor capacitor cross reference PDF

    2N6021

    Abstract: 2N4983 D5K2 3N83 D13H1 3N81 GE 2N6027 2N2160 2N2646 CIRCUIT 3N85
    Contextual Info: SPECIAL SILICON PRODUCTS SILICON CONTROL SWITCHES— SCS 28 Cutoff Charac­ teristics GE Type V ak !r- Anode Voltage Slocking (V) Continuous DC Forward Current (rnA) Peak Recurrent Forward Current (A) Cathode Gate Peak Current (m A) ( a 1 1OO//S0C Con­


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    100//s800li0v-25v2n6021+92n4983d5k23n83d13h13n81ge 2n60272n21602n2646 circuit3n85 PDF

    3n84

    Abstract: 3N81 TB4140V CG2-22-10 CG2-22-14 CG2-25-10 TB4100V TB4120V TB4160V 3N82
    Contextual Info: THYRISTORS , AT Caractéristiques électriques Electrical characteristics Valeurs limites Absolute max. ratings V DWM TYPES 'o A V RWM (V) ITSM V RSM (10ms) (V) (A) lH V GT (V) 'GT ImA) rg k= V TM oo Im A ] (V) 345 A eff (rms) / tcase=80°C t(vj)=125°C l2t=80.000A2s


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    000a2cg2-22-cg2-22-10cg2-22-14+1010kii200ma3n843n81tb4140vcg2-25-10tb4100vtb4120vtb4160v3n82 PDF

    2n2646 equivalent

    Abstract: 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan
    2n489-4942n2646-472n2646 equivalent2n4991+82n4991 equivalentsilicon unilateral switchsbs thyristor 2n49912n2646equivalent transistor of 2n6027low voltage scrthyristor a2f2n4985 PDF

    3N81

    Abstract: IN4148 anode cathode 2N4983 3N84 eto thyristor thyristor igc TRANSISTOR BO 344 2N4987 2N4985 thyristor eto
    Contextual Info: SILICON UNILATERAL AND BILATERAL SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of


    OCR Scan
    3n81in4148 anode cathode2n49833n84+6eto thyristorthyristor igctransistor bo 3442n49872n4985thyristor eto PDF

    2N2646 equivalent

    Abstract: SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan
    2n489-4942n2646-472n49882n2647+12022-/ufsus-2n49892n4989j2n26472n2646 equivalent2n49913n813n84d5k220 amp 800 volt triac2n4983equivalent 2n1671 PDF

    2N4985

    Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan
    2n489-4942n2646-47gec32u10khz+122n4984i2n2647-2n49852n49852n2646 cross reference2n2646 equivalent2n26462n49832n4991ge scr cross reference2n4992equivalent 2n1671 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan
    mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214 PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+62n3392n3201transistor bf 175germanium transistorepitaxial mesa2n241 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor PDF

    2n2646 equivalent

    Abstract: 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan
    2n489-4942n2646-472n2646 equivalent2n2646+8triac phase control2n602b2n4991equivalent 2n1671four-layer diodesbs thyristor2n49873n84 PDF

    L23402

    Contextual Info: L2340 Digital Synthesizer □ D ig ital W av efo rm S y n th esis a t 50 M H z The L2340 is a digital synthesizer th at perform s w aveform synthesis, m odulation, an d dem odulation. □ 24-Bit Polar Phase A ngle Accuracy □ User-selectableWaveformSynthesis,


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    l234024-bit16-bit32-bit+2l2340gl23402 PDF

    3N83

    Abstract: 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987
    Contextual Info: SILICON U NILATERAL AND BILATERAL SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi­ mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of


    OCR Scan
    20/is/3n833n833n84+8transistor 3n83pin configuration npn transistor 9012 pnp40v neon lamppnp monolithic transistor pairtransistor pnp 12v 1a continuous current peakpin configuration npn transistor 9012 npnnixie display2n4987 PDF

    3n84

    Abstract: 2N4983 2N4985 SCR nomenclature, General electric 2n4990 scr 6A 2N4987 2N4984 GE 2N4992 3n81
    Contextual Info: SILICON U N I L A T E R A L A N D B I L A T E R A L SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi­ mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of


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    200fiin4i48in4i46500pps+103n842n49832n4985scr nomenclature, general electric2n4990scr 6a2n49872n4984ge 2n49923n81 PDF