GE 2N6027
Abstract: 2N5258 2SF128 2N5257 2N60758 2N6151 TIC236B 2n60758 motorola 02010LT 2N60738
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062
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2n49472n49482n49492n4986+162n49932n50602n50612n50622n50632n5064ge 2n60272n52582sf1282n52572n607582n6151tic236b2n60758 motorola02010lt2n60738
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2N60758
Abstract: 2N60738 2n60758 motorola 2N60718 2SF120 2N60708 2SF126 2SF32A 2sf248 2N5257
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062
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2n49472n49482n49492n4986+162n49932n50602n50612n50622n50632n50642n607582n607382n60758 motorola2n607182sf1202n607082sf1262sf32a2sf2482n5257
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2N60738
Abstract: 2N60758 2N60718 2N6626 2N6140 2N6144 Motorola 2n5060 2SF120 ANSALDO MOTOROLA LSC
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062
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2n49472n49482n49492n4986+162n49932n50602n50612n50622n50632n50642n607382n607582n607182n66262n61402n6144motorola 2n50602sf120ansaldomotorola lsc
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c 337 25
Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3
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c 337 25sc160dtic 2160 triacv130he150+6general electric scr c220es54494533 gem2n4401 2n3904 2222a1n21es5451
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3N84
Abstract: 2N4988 RCA SCR 2n 2N4991 2N327 3N81 2N4984 IN4I48 3N85 40v neon lamp
Contextual Info: SILICON U N I L A T E R A L AND B I L A T E R A L SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of
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2nm462n3273n842n4988+7rca scr 2n2n49913n812n4984in4i483n8540v neon lamp
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2n2646 equivalent
Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can
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2n489-4942n2646-472n49872n4990+122n4986in5059-2n4990sus-2n49862n2646 equivalent3n842n4987-90sus 2n49872n4987 equivalentge motor capacitor cross referenceequivalent transistor of 2n6027circuits by using 2n6027
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2N4983
Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can
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2n489-4942n2646-47s-2n49832n4986+122n49632n4983---15vtransistor 2n4983general electric c22bcircuits by using 2n60272n2646 equivalentge c22b2n4991sbs thyristor2n602bge motor capacitor cross reference
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four-layer diode
Abstract: transistor 2N4983 2N4992 D13V1 2N4983 2N4990 2N4991 2N4985 2n4989 RA3A
Contextual Info: SPECIAL SILICON PRODUCTS REFERENCE AMPLIFIERS > V c« = 3 Volts, lc= 0.1 m A , lz= 5 m A , Rb= 1K 2 At Vc e = 3V, lc = .lm A SPECIAL SILICON PRODUCTS INTEGRATED VOLTAGE REGULATOR IVR D13V SERIES The D13V is a monolithic integrated voltage regulator circuit. Designed for use as a shunt voltage regulating ele
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2n49882n49892n49902n4983+92n49852n49862n49912n49922n4993four-layer diodetransistor 2n4983d13v1ra3a
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2n2646 equivalent
Abstract: 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can
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2n489-4942n2646-472n2646 equivalent2n4991+82n4991 equivalentsilicon unilateral switchsbs thyristor 2n49912n2646equivalent transistor of 2n6027low voltage scrthyristor a2f2n4985
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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je1100mfc8040mfc8030mc1316+6triac 9707schematic of mc1466transistor mje 5332je 3055 motorolamcr407-2mc1466
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3N81
Abstract: IN4148 anode cathode 2N4983 3N84 eto thyristor thyristor igc TRANSISTOR BO 344 2N4987 2N4985 thyristor eto
Contextual Info: SILICON UNILATERAL AND BILATERAL SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of
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3n81in4148 anode cathode2n49833n84+6eto thyristorthyristor igctransistor bo 3442n49872n4985thyristor eto
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2N2646 equivalent
Abstract: SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can
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2n489-4942n2646-472n49882n2647+12022-/ufsus-2n49892n4989j2n26472n2646 equivalent2n49913n813n84d5k220 amp 800 volt triac2n4983equivalent 2n1671
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2N4985
Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can
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2n489-4942n2646-47gec32u10khz+122n4984i2n2647-2n49852n49852n2646 cross reference2n2646 equivalent2n26462n49832n4991ge scr cross reference2n4992equivalent 2n1671
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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2n2646 equivalent
Abstract: 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can
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2n489-4942n2646-472n2646 equivalent2n2646+8triac phase control2n602b2n4991equivalent 2n1671four-layer diodesbs thyristor2n49873n84
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GE TRIAC SC40B
Abstract: 2n4992 3N84 SC40B transistor 2n4992 2N4992 equivalent 2n2646 equivalent triac 9012 SBS thyristor Triac 50 amp 250 volt
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can
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2n489-4942n2646-472n4992sc40b+8ge triac sc40b3n84transistor 2n49922n4992 equivalent2n2646 equivalenttriac 9012sbs thyristortriac 50 amp 250 volt
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3N83
Abstract: 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987
Contextual Info: SILICON U NILATERAL AND BILATERAL SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of
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20/is/3n833n833n84+8transistor 3n83pin configuration npn transistor 9012 pnp40v neon lamppnp monolithic transistor pairtransistor pnp 12v 1a continuous current peakpin configuration npn transistor 9012 npnnixie display2n4987
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3n84
Abstract: 2N4983 2N4985 SCR nomenclature, General electric 2n4990 scr 6A 2N4987 2N4984 GE 2N4992 3n81
Contextual Info: SILICON U N I L A T E R A L A N D B I L A T E R A L SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of
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200fiin4i48in4i46500pps+103n842n49832n4985scr nomenclature, general electric2n4990scr 6a2n49872n4984ge 2n49923n81
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AC127
Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub lication. The manuscripts may deal with any
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2n24a2n34a2n38a2n43a+162n44a2n59c2n60a2n61a2n61boc77-309ac127cv7089ac1252sb415oc71ad161cv8615hj17dad1422n3278
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