MP3731
Abstract: MP2200A MP3730 O446 Motorola germanium transistor pnp MP2100A MP2000A MP2300A MP2400A germanium transistors PNP
Contextual Info: MP2100A, MP2200A, MP2300A, MP2400A GERMANIUM For Specifications, See MP2000A Data. MP3730 (GERMANIUM) MP3731 5 and 10 AMPERE POWER TRANSISTORS PNP GERMANIUM POWER TRANSISTORS PNP GERMANIUM EPITAXIAL BASE 200-320 VOLTS 56 WATTS PNP Germanium power transistors with the MP3730 designed
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MP2100A,
MP2200A,
MP2300A,
MP2400A
MP2000A
MP3730
MP3731
MP3730
MP3731
MP2200A
O446
Motorola germanium transistor pnp
MP2100A
MP2300A
MP2400A
germanium transistors PNP
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diode aa118
Abstract: aa118 diode AA118 Germanium Diode aa118 germanium point contact diode AA118 Germanium diode STg-50 "Phase Discriminator" Germanium "Point Contact Diode"
Contextual Info: AA 118 Germanium-Spitzendiode Germanium point contact diode Anwendungen: Als Diodenpaar für Phasendiskriminatorschaltungen mit hohen Betriebsspannungen. Applications: M atched pairs for phase discriminator circuits with high supply voltages. Abmessungen in mm
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AA118
diode aa118
aa118 diode
AA118
Germanium Diode aa118
germanium point contact diode
AA118 Germanium diode
STg-50
"Phase Discriminator"
Germanium
"Point Contact Diode"
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aa134 diode
Abstract: AA134 DIODE AA134 "Point Contact Diode" germanium point contact diode Germanium Diode tfk Germanium Diode aa134 TFK AA134 TFK diode
Contextual Info: A A 134 Germanium-Spitzendiode Germanium point contact diode Anwendungen : Allgemein, für mittlere Betriebsspannungen. Applications: General purpose, for medium supply voltages. Abmessungen in mm Dimensions in mm 0 2 ,6 KATHODE CATHODE _ I- 1 } 1
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AA134
U-26---J
aa134 diode
AA134
DIODE AA134
"Point Contact Diode"
germanium point contact diode
Germanium Diode tfk
Germanium Diode aa134
TFK AA134
TFK diode
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MR830
Abstract: MP601 germanium power transistors MP600 MP602 MP603 Germanium power
Contextual Info: MP600 GERMANIUM thru PNP Germanium power transistors designed for highcurrent switching applications requiring low saturation voltages, short switching times and good sustaining volt age capability. • Alloy Diffused Epitaxial Construction • Low Saturation Voltages —
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MP600
MP603
MP600
MP601
MP602
MP603
MR830
germanium power transistors
Germanium power
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OC 140 germanium transistor
Abstract: MA202 MA206 germanium pnp transistor germanium transistor oc 160 germanium transistor
Contextual Info: MA202, MA206 germanium Germanium PNP transistor designed for high-voltage applications in the audio frequency range, such as neon driver, solenoid or relay driver applications. CASE 31(1) (TO-5) All UacU isolated from cat« S T Y L E J: PIN 1. EM ITTER 2. BASE
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MA202
MA206
MA206
MA202fMA206
OC 140 germanium transistor
germanium pnp transistor
germanium transistor oc
160 germanium transistor
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motorola MP2400A
Abstract: MP2100A Motorola germanium transistor pnp MP2200A AN-415 MP2000A MP2300A MP2400A Germanium power
Contextual Info: MP2000A GERMANIUM MP2100A MP2200A MP2300A MP2400A PNP GERMANIUM POWER TRANSISTORS 25 AMPERES ADE POWER TRANSISTORS . . . designed fo r high-voltage switching, and pow er converter 30-120 VOLTS 106 WATTS applications. • A lloy-D iffused Epitaxial Construction
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MP2000A
MP2100A
MP2200A
MP2300A
MP2400A
MP2400A
motorola MP2400A
Motorola germanium transistor pnp
AN-415
Germanium power
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transistor WL 431
Abstract: 2N700A BUV pnp 50a MW1131
Contextual Info: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,
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MIL-S-19500/123A
-S-19500/123
2N700A
-65to
70MHz
5961-A085
transistor WL 431
2N700A
BUV pnp 50a
MW1131
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AF279
Abstract: tfk transistor germanium-pnp-mesa-hf-transistor AF279 transistor tfk 140 Germanium mesa AF 279 042PF
Contextual Info: Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: V orstufen bis 900 MHz Applications: Pre stages up to 900 MHz Besondere Merkmale: Features: • Passivierte O berfläche • • Leistungsverstärkung 16 dB • Power gain 16 dB
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AF280
Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF
Contextual Info: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:
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L1116
Abstract: RCA photomultiplier Bi4Ge3012 photodiode germanium scintillator photodiode Avalanche photodiode APD 137CS RCA Solid State amplifier C30994E photodiode Avalanche photodiode
Contextual Info: E ELECTRO OPTICS IDE D H 3A741S4 ODDDD4fl T • GEEO C30994E Solid State Gamma-Ray Detector 7 -7 ^ 7 Developmental Type Silicon Avalanche Photodiodes Coupled to Bismuth Germanium Oxide Bi4Ge3012 Scintillators RCA Developmental type C3Q994E con sists of tw o Bismuth Germanium Oxide
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C30994E
Bi4Ge3012)
C3Q994E
Wh514)
L1116
RCA photomultiplier
Bi4Ge3012
photodiode germanium
scintillator
photodiode Avalanche photodiode APD
137CS
RCA Solid State amplifier
photodiode Avalanche photodiode
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AF239
Abstract: germanium-pnp-mesa-hf-transistor AF 239
Contextual Info: 'W Nicht für Neuentwicklungen Not for new developments AF 239 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixe r and o scilla to r stages up to 900 MHz
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AF 109 R
Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor
Contextual Info: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB
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AF109R
AF 109 R
AF109R
af109
germanium-pnp-mesa-hf-transistor
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AF239
Abstract: germanium-pnp-mesa-hf-transistor Tfk 239 900 mhz oscillator AF 239
Contextual Info: * AF 239 S 'W Nicht für Neuentwicklungen Not for new developments 4W Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixer and o scilla to r stages up to 900 MHz
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MP2060
Abstract: MP2063 100-C MP2061 MP2062 Germanium power *p2861
Contextual Info: MP2060 thru MP2063 GERMANIUM STYLE): PIN 1. BASE 2. EMITTER CASE:COLLECTOR CASE 11 PNP germanium power tran sisto rs for audio am plifier applications. M AXIM UM R A T IN G S Symbol R a tin g Emitter-Base Voltage Collector Current (Continuous) V CES VCEO
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MP2060
MF2063
MP20S1
MP2062
MP2063
MP2060
MP2061
MP20S2
MP2063
100-C
MP2061
Germanium power
*p2861
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transistor ac 152
Abstract: AC1* germanium transistor transistor ac 127 AC121 transistor 152 M xl 1507 germanium transistor ac 125 OC 76 germanium transistor AC152 Q60103-F121
Contextual Info: ESC ]> • 023SbGS 000402^ 3 H S I E 6 ./ PNP Germanium Transistors A C 121 _ SIEMENS AKTIEN6ESELLSCHAF -— — fo r AF, driver and output stages o f m edium perform ance A C 121 and AC 152 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 metal case
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235b05
Q60103-D121
152IV
Q60103-X152-D
Q60103-E121
Q6010E
AC162
fl535b05
0Q0M03M
T-29-tl
transistor ac 152
AC1* germanium transistor
transistor ac 127
AC121
transistor 152 M
xl 1507
germanium transistor ac 125
OC 76 germanium transistor
AC152
Q60103-F121
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KJE transistor
Abstract: KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor Q60103-X151-F1
Contextual Info: 2SC D • fi235bQS 0004035 ISIE6 AC 151 AC 151 r PNP Germanium Transistors SIEMENS AKTIENGESELLSCHAF C 04035 T- 0 9 - U Not for new design for AF input and driver stages of medium performance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case
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0235bOS
Q60103-X151-D
Q60103-X151-D1
Q60103-X151-E
Q60103-X151-E1
Q60103-X151-F
Q60103-X151-F1
Q60103-X151-G
Q62901-B1
AC151,
KJE transistor
KJE 17 transistor
NT 101
transistor AC151
AC151
transistor kje
KJE ZO
transistor ac 151
k 151 transistor
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Cv7003
Abstract: Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91
Contextual Info: Newmarket Semiconductors Diodes/Germanium Alloy Power Transistors P N P Germanium Alloy Power Transistors Outline drawing No. M Ap p lies. To-3 . R E FE R E N C E T A B L E Maxim um ratings. C h aracte ristics T . mb = 25° C, Cad* BVc eo BVCbo BVebo *cm
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2772SC
7726A
27727X.
34768X
GET103
31419X
BS9300-C084)
31428H
GET116
31420B
Cv7003
Newmarket Transistors
cv7042
OC71
cv7004
CV 7085
OC72
OA47 germanium
oc77
OA91
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AF239
Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
Contextual Info: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.
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A23Sb05
AF239
Q60106-X239
T1-0221)
transistor h5c
AF 239
0406H
F239
Q60106-X239
WTV4
AAO-4A
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AF139
Abstract: OOQ405 mz 1540
Contextual Info: ESC D • flE35t.05 0004056 T B IS IE G t n PNP Germanium RF Transistor AF139 -SIEMENS AKTIENGESELLSCHAF - ~ T ~ 3 I~ 0 7 for input stages, mixer and oscillator stages up to 8 6 0 M H z AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads
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OOQ405Ã
AF139
Q60106-X139
200MHz-
A800MHZ-
AF139
10lHHz
OOQ405
mz 1540
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OC 74 germanium transistor
Abstract: GERMANIUM SMALL SIGNAL TRANSISTORS germanium Power Transistor G0503 7N51 Germanium power
Contextual Info: MPI 10 GERMANIUM s' / V? , / PNP germanium power transistor designed for high-gain power amplification in the audio range. S T Y L E I: PIN 1. B A SE 2. EM IT T ER CA SE : C O L L E C T O R CASE 11 MAXIMUM R A T IN G S (Tc = 25°C unless otherwise noted)
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10Q-C.
OC 74 germanium transistor
GERMANIUM SMALL SIGNAL TRANSISTORS
germanium Power Transistor
G0503
7N51
Germanium power
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transistor kc 2026
Abstract: 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 2n173 2N2079A MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026
Contextual Info: M IL -S-19500/340 17 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N2079A This specification Is mandatory for use by all D epart m ents and Agencies of the D epartm ent of Defense. 1 s SCOPE 1.1 Scope. T his specification covers the detailed req u irem en ts for a high-pow er, germanium,
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MIL-S-19500/340
2N2079A
Adc-19500/340
2N2079A
2N173
2N2079
2N277
2N2080,
2N2080A
2N278
transistor kc 2026
2n2079
2N1099
GERMANIUM* 2n1099
2N2082
transistor sec 621
MIL-S-19500 FOR POWER LINE TRANSISTOR
kc 2026
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ci 740
Abstract: ci740 germanium transistor pnp XBI03 germanium Power Transistor Lf transistor power germanium transistor pnp Germanium common collector PNP transistor lf
Contextual Info: E D ISW A N MAZDA XBI03 L.F. T R A N S IS T O R Germanium PN P Junction Type _ T E N T A T IV E GENERAL The X B I0 3 is a germanium pnp junction type transistor suitable for use as an L.F. Amplifier The element of the transistor is hermetically sealed in a small can.
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XBI03
ci 740
ci740
germanium transistor pnp
germanium Power Transistor
Lf transistor
power germanium transistor pnp
Germanium
common collector PNP
transistor lf
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MP1613
Abstract: MPT613 adc 515 pnp germanium low power transistor 100-C Germanium power
Contextual Info: MP1613 GERMANIUM S T Y L E 1: PIN I. B A S E 2. E M IT T E R C A S E: C O L L E C T O R Medium-current germanium PNP power transistor, designed for use in 12 Volt: vertical deflection circuits in television receivers; features: high breakdown voltage, low leakage current, and low saturation volt
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MP1613
J001I
MP1613
MPT613
adc 515
pnp germanium low power transistor
100-C
Germanium power
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k 151 transistor
Abstract: transistor ac 151 AC161 AC151 transistor AC151 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-F Q60103-X151-F1
Contextual Info: SSC T> m 0235bD5 0004035 ISI EG AC 151 AC 1 5 1 r PNP Germanium Transistors SIEMENS AKTIENúESELLSCHAF C 04035 T - 9 - / / Not for new design fo r AF inp u t and driver stages o f m e d iu m p erfo rm an ce AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case
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235bD5
Q60103-X151-D
Q60103-X151-D1
Q60103-X151-E
Q60103-X151
Q60103-X151-F
Q60103-X151-F1
Q60103-X151-G
Q62901-B1
AC161.
k 151 transistor
transistor ac 151
AC161
AC151
transistor AC151
Q60103-X151-D
Q60103-X151-D1
Q60103-X151-E
Q60103-X151-F
Q60103-X151-F1
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