RBBO Search Results

A109

Abstract: PH05
Contextual Info: A a F L AK E RETARDANT 9 C O L OR = BLA CK, /§\A>TBB P “ R AflTK A1 /A R H O E . BRONZE PER ¿4\ I N S E R T 5 S BOARDLO A AT I NG I THERM OP LAST IC 3ER Q Q- B-62 G 4 3 2 04 , 1[ P L A T I Nb PER F A CE ►! L SU PSB ^I TH OB SOI B ”~E IN S E R T EO A RBBO C K I

Contextual Info: TR3006HS • Designed for Short-Range Wireless Data Communications • Supports RF Data Transmission Rates Up to 115.2 kbps • 3 V, Low Current Operation plus Sleep Mode • Stable, Easy to Use, Low External Parts Count • Complies with Directive 2002/95/EC RoHS

Contextual Info: RX5500 • Designed for Short-Range Wireless Control Applications · 3 V, Low Current Operation plus Sleep Mode · Characterized for Automotive Applications · High EMI Rejection Capability The RX5500 hybrid receiver is ideal for short-range wireless control applications where robust

NTE6400

Abstract: NTE6400A rbbo unijunction transistor
Contextual Info: NTE6400 & NTE6400A Unijunction Transistor TO39 Type Package Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable “N” type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,

TIL78

Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Contextual Info: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE

MA7805

Abstract: BC128 2S746 BSY37 2S745 2SC183 OC740 PMT120 SAC40
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

TIL78

Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

TIL78

Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

MA7805

Abstract: ME214 OC740
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

TIL78

Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

2N2646

Abstract: High power SCR 2n2647 SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr"
Contextual Info: 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.

Contextual Info: F-212 Most older products not shown in this catalog are still available. Call Samtec or see www.samtec.com/xxxx for availability and specifications. Substitute series callout for xxxx INDEX BY SERIES New product highlighted in bold. Series Description Page

Contextual Info: TR3003 • Designed for Short-Range Wireless Data Communications · Supports RF Data Transmission Rates Up to 115.2 kbps · 3 V, Low Current Operation plus Sleep Mode · Stable, Easy to Use, Low External Parts Count The TR3003 hybrid transceiver is ideal for short-range wireless data applications where robust

Contextual Info: y k iy j x iv k i Bridge-Battery B a ck u p Controllers for N o t e b o o k s The M AX1612/M A X1613 m anage the b rid g e battery som etim es called a hot-swap or auxiliary battery in portable system s such as notebook com puters. They feature a step-up DC-DC converter that boosts 2-cell or

TR3002

Abstract: 2506033017YO SM-20L
Contextual Info: DEVELOPMENT KIT Info Click here TR3002 • • • • • Designed for Short-Range Wireless Data Communications Supports RF Data Transmission Rates Up to 115.2 kbps 3 V, Low Current Operation plus Sleep Mode Stable, Easy to Use, Low External Parts Count

Contextual Info: TR3000 • Designed for Short-Range Wireless Data Communications • Supports RF Data Transmission Rates Up to 115.2 kbps • 3 V, Low Current Operation plus Sleep Mode • Stable, Easy to Use, Low External Parts Count • Complies with Directive 2002/95/EC RoHS

Signal Path designer

Contextual Info: RX5501 • Designed for Short-Range Wireless Control Applications • 3 V, Low Current Operation plus Sleep Mode • Characterized for Automotive Applications • High EMI Rejection Capability • Complies with Directive 2002/95/EC RoHS 315.00 MHz Hybrid

Contextual Info: TR3002 • Designed for Short-Range Wireless Data Communications • Supports RF Data Transmission Rates Up to 115.2 kbps • 3 V, Low Current Operation plus Sleep Mode • Stable, Easy to Use, Low External Parts Count • Complies with Directive 2002/95/EC RoHS

Signal Path designer

Contextual Info: RX6501 • Designed for Short-Range Wireless Control Applications • Supports RF Data Transmission Rates Up to 19.2 kbps • 3 V, Low Current Operation plus Sleep Mode • Stable, Easy to Use, Low External Parts Count • Complies with Directive 2002/95/EC RoHS

Contextual Info: RX6004 • Designed for Short-Range Wireless Control and Data Communications • Supports RF Data Transmission Rates Up to 115.2 kbps • 3 V, Low Current Operation plus Sleep Mode • Stable, Easy to Use, Low External Parts Count • Complies with Directive 2002/95/EC RoHS

868 mhz AM RECEIVER pcb layout

Contextual Info: TR3003 • Designed for Short-Range Wireless Data Communications • Supports RF Data Transmission Rates Up to 115.2 kbps • 3 V, Low Current Operation plus Sleep Mode • Stable, Easy to Use, Low External Parts Count • Complies with Directive 2002/95/EC RoHS

Contextual Info: RX5003 • Designed for Short-Range Wireless Control and Data Communications • Supports RF Data Transmission Rates Up to 115.2 kbps • 3 V, Low Current Operation plus Sleep Mode • Stable, Easy to Use, Low External Parts Count • Complies with Directive 2002/95/EC RoHS

microcontroller based cell phone detector

Abstract: THRS V1113 MAX1630
Contextual Info: 19-4785; Rev 0; 11/98 NUAL KIT MA ATION U EET L H A S V A E T WS DA O L L O F Bridge-Battery Backup Controllers for Notebooks The MAX1612/MAX1613 manage the bridge battery sometimes called a hot-swap or auxiliary battery in portable systems such as notebook computers. They

Contextual Info: DEVELOPMENT KIT Info Click here TR3000 • • • • • Designed for Short-Range Wireless Data Communications Supports RF Data Transmission Rates Up to 115.2 kbps 3 V, Low Current Operation plus Sleep Mode Stable, Easy to Use, Low External Parts Count