000032B Search Results

2N5434

Abstract: S 5018 2N5432 2N5433 X2N5432 X2N5433 X2N5434
Contextual Info: CALOGIC CORP 4flE D • 000032b <3 ■ CGC N-Channel JFET Switch CORPORATION vJ T -3 S -Z S ’ 2N5432- 2N5434 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • LOW fd*<on) • Excellent Switching • Low Cutoff Current Gate-Source Voltage. -25V

Satellite C670

Contextual Info: Z-COHMUNICATIONS Z 'C o m m INC 4SE IR b b M b b D 000032b b «Z C I VCO MODEL C-670 T -S O iS PAGE1 u n ic a t io n s , I n c . 9939 Via Pasar • San Diego, California 92126 Phone 619 621-2700 FAX (619) 621-2722 PHASE NOISE (1Hz BW) (TYP) -30 -40 -50 -60

MIL-STD-2020

Contextual Info: E G & 6/CANADA/0PT0ELEK M7E T> m 3030bl0 000032B 1 • CANA YAG Series_ ~r-<//-53 Features • • • • Planar Diffused Large A rea W ide Dynam ic R ange > 5 0 % DC Quantum Efficiency at 1064 nm • Pulse Quantum Efficiency at 1064 nm > 3 8 % at 20 nS Pulse Width

Contextual Info: AM P INFORMATION STORAGE DEVICES ' fliip M e f' TECHNOIOGYBYISD ISD1200 Series Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations PRELIMINARY _ FEATURES • Easy-to-use single-chip voice record/ playback solution Fully addressable to handle multiple

Contextual Info: FM24C08FRAM SerialMemory $ j^ a M IR O N Product Preview Features I 8Kbit Nonvolatile Ferroelectric RAM Organized as 1,024 x 8 I Very Low Power CMOS Technology - IOOjiA Active Read or Write - IOjiA Standby Over Commercial Temperature Range I Reliable Thin Film Ferroelectric Technology

ZN448E

Abstract: ZN447E ZN448 ZN447J ZN447D ZN449 ZN448J ZN447 ZN448D IN914
Contextual Info: PLESSEY SEMICONDUCTORS l^E o | 7220513 0000313 t>| APLESSEY S em ico n d u cto rs. ZN447/ZN448/ZN449 ^ P 5 i ' 0 -O S 8-BIT MICROPROCESSOR COMPATIBLE A-D CONVERTERS The ZN447, ZN448 and ZN449 are 8-bit, successive approximation A-D converters designed for easy interfacing

4116 DRAM 16Kx1

Abstract: 82C206 82C558
Contextual Info: 82C556/82C557/82C558 Figure 2-3 82C557 SYSC Block Diagram I R ES ET PW RG D CLK ECLK LCLK HA[31:3] BE[7:0]# M /IO # D/C# W /R # /IN V /D IR TYO AD S # BRDY# NA# KEN #/LM EM # EADS#/(W B/W T#) HITM # CACHE# SM IACT# EC D OE# O C D O E# ECAWE#/CACSOO# OCAW E#/CACS1 O#

Contextual Info: H M C IgSSäl MICROWAVE CORPORATION 157 GaAs MMIC FREQUENCY DOUBLER 1 - 3 GHz INPUT FEBRUARY 1998 Features GeneraI Description CONVERSION LOSS: 15 dB The HMC157 is a miniature frequency dou­ bler in a MMIC die. Suppression of undes­ ired fundamental and higher order harmon­

Contextual Info: H M C fkM ê MICROWAVE CORPORATION 190 M S 8 GaAs MMIC MSOP8 SPDT SWITCH DC - 3 GHz FEBRUARY 1998 General Description Features The HMC190MS8 is a low cost SPDT switch I in an 8-lead MSOP package. The switch can control signals from DC to 3.0 GHz. It is I especially suited for low and medium power I

PIN Photodiode For CATV Receiver

Contextual Info: EPI EPM708FJ-S Low D istortion InGaAs PIN Photodiode for CATV / Return Path A pplications Features • Low intermodulation distortion ■ High responsivity at 1330 nm or 1550 nm ■ Low capacitance ■ Low optical back reflection ■ Planar, passivated photodiode chip

Contextual Info: PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT AND TIMER The A5358CA is a low-current BiCMOS circuit providing all of the required features for a photoelectric type smoke detector. This device can be used in conjunction with an infrared photoelectric chamber to

J16-18A-R01M-SC

Abstract: J16-8SP-R05M J16-5SP-R02M-HS J16-5SP-R02M-SC photodiode ge J16-18A-R01M photodiode germanium J16-18A-R01M-HS J16-5SP-R03M-HS germanium diode equivalent
Contextual Info: Germanium Detector Operating Notes 0.8 to 1.8 ¡im General Responsivity Operating Circuit J1 6 S eries d etectors are hig h -q u ality G erm an iu m photodiodes designed for th e 800 to 1800 n m w avelen g th range. T he eq u iv alen t circu it for a G erm a­

Contextual Info: PM D a ta s h e e t I PMC-931127 ISSUE 5 1. •V P M C -S ierra, Inc. IV-_ PM7375LASAR-155 LOCAL A m SAR&PHYSICAL LAYER FEATURES • Single-chip Peripheral Component Interface PCI Bus Local ATM Network Interface using SONET/SDH framing at 155.52 or 51.84 Mbit/s and ATM

83C154f

Abstract: 83C154D 3C154 Z-221A 83C154 instruction 5483c S83C1
Contextual Info: 4bE D E3 SB bß MSb 00002^2 1' M M H S -& r PRELIMINARY September 1989 MATRA DATA SHEET M H S 83C 154/83G 154D CMOS SINGLE-CHIP 8 BIT MICROCONTROLLER . 83C154 - CMOS SINGLE CHIP 8 BIT MICRO­ CONTROLLER with factory mask programmable ROM . 83C154D - 83C154 with DOUBLE ROM under

1905I

Abstract: I 508 V IN3064 ti300 reeves-hoffman
Contextual Info: RIEVES-HOFFMAN Model 322 DIP VCXO DIVISION DYNAMICS CORPORATION O F AMERICA Features: • • • • • • Frequency Range 1 to 80 Mhz Low Cost Internal S M T Construction HCmos / TTL Compatible 14 Pin DIP Compatible Package Standard Frequencies The Reeves-Hoffman Model 322 is a Low Cost

PIN Photodiode For CATV Receiver

Abstract: EPITAXX pin Photodiode 1550 nm EPM708FJ-S EPIH708FJ-S
Contextual Info: EPI EPNI708FJ-S L o w D istortion In G aA s PIN P h o to d io d e fo r C A T V / R etu rn P ath A p p lic a tio n s Features • Low interm odulation distortion ■ High responsivity at 1330 nm or 1550 nm ■ Low capacitance ■ Low optical back reflection