2N5581 Search Results

2N558

Abstract: 2N5581
Contextual Info: 2N5581 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5581J • JANTX level (2N5581JX)

2N2222A 331

Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
Contextual Info: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800

Contextual Info: 2N5581+JAN Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A)800m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.

Contextual Info: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 423 Devices Qualified Level 2N5581 JAN JANTX JANTXV 2N5582 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

2N5581

Abstract: 2N5582
Contextual Info: TECHNICAL DATA 2N5581 JAN, JTX, JTXV 2N5582 JAN, JTX, JTXV MIL-PRF QPL Processed per MIL-PRF-19500/423 DEVICES NPN SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO

2N5581

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N5581 JAN, JTX 2N5582JAN, JTX Processed per MIL-S-19500/423 CKYSTAIONCS 2805 Veterana Highway Suite 14 Ronkor KOfT^B N.Y. 1177Ö NPN Silicon Small-Signal Transistors M A X IM U M R A TIN G S Ranno Sym bol Vakw U n ii CoCacvy E r w w V ìitA jo

2N5581

Contextual Info: 2N5581 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5581J • JANTX level (2N5581JX)

2N5581

Abstract: 2N5581 JAN 2N5581J 2N5581JV 2N5581JX
Contextual Info: 2N5581 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5581J • JANTX level (2N5581JX)

2N5582

Abstract: 2N5581 TO-206AB
Contextual Info: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices Qualified Level 2N5581 JAN JANTX JANTXV 2N5582 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

2n5680

Abstract: 2n5680 motorola 2N5679 MOTOROLA
Contextual Info: 2N5415, 2N5416 For Specifications, See 2N3439 Data. 2N5581/82 For Specifications, See 2N2218.A Data. M A X IM U M RATINGS 2N5680 2N5682 Untt 120 Vdc 120 Vdc Symbol 2N5679 2N5681 Collector-Emitter Voltage VCEO 100 Collector-Base Voltage VCBO 100 Emitter-Base Voltage

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

2N5581A

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B

2N3810 LCC

Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *

2N5590

Abstract: 2N5591 2N5581 2N5589
Contextual Info: ^ jg m R ^ PmdMts M ìc r o 140 C o m m e rc e Drive s e m i Ptofttsta-sîSs-wkhkîijy T5e£ijrwte>j¥ M o n tg o m eryvilie , PA 18936. Tei: 215 631-9840 /« » ir - r - # * .« 2 N5590/2N55Ô1 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS

2n2846

Abstract: 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola 2C2222A MPS8092 2N4401 die 2n3116
Contextual Info: 34 M O T O R O L A SC -CDIODES/OPTO} 1 D • t,3fc,7S55 0 0 3 7 ^ 7 4 34C 37974 7"-3r- /S SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A — DIE NO. NPN LINE SOURCE — DMB101 This die provides performance similar to that of the following device types:

1040B

Abstract: 2N3910 svt6062 2n5100
Contextual Info: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.

motorola 2N2270

Abstract: 2N5861 MOTOROLA
Contextual Info: MOTOROLA SC ÎXSTRS/R F} D E | b 3 b 7 a 5 4 DD?b707 D Small-Signal Metal Transistors Selector Guide Errata s< This errata provides the missing page number references for the device index appearing on Page 2. Device Index Also Available In Specification Levels:

2N3509

Abstract: 2N3647 2N2604 2N2605 2N3485 2N3485A 2N3486 2N3486A 2N3508 2N3648
Contextual Info: Small Signal Transistors TO-46 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB V (V) (V) µA) (µ hFE (V) @ IC @ VCE VCE (SAT) @ IC (mA) (V) (V) (mA) Cob fT NF toff (pF) (MHz) (dB) (ns) MAX MIN MAX MAX 6.0 30 4.0 - *VCER *ICEV MIN MIN MIN 60 45

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

2N5581

Abstract: 2N5582 MIL-PRF19500 423d
Contextual Info: This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. INCH-POUND The documentation and process conversion

Contextual Info: Small Signal Transistors TO-46 Case* TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO S VCBO V <V) (V) (H*) •ICEV Mm MIN MIN MAX e ic hFE (niA) (V) 9 VCE VCE(SAT) IC Cob (V) (V) (mA) MAX MIN MAX <PF> •ff; ' toff : PM# fcipl: (n«) MAX MW MAX MAX 2N2604

Contextual Info: Small signal Transistors TO-46 Case TYPE NO. DESCRIPTION BVCBO BVCEO bvebo ICBO « VCBO V (V) 00 MIN MIN MIN (HA) *ICEV MAX 1*F1 O le (mA) (V) OVCE VCE(SAT) 0 1C Cob <v> (V) 0*A) NF toff (MHz) (dB) (M) MAX MM MAX MAX MAX MIN MAX m fT 2N2604 PNP LOW NOISE