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    2N5430 Search Results

    2N5430 Datasheets (37)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N5430
    Central Semiconductor Leaded Power Transistor General Purpose - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=7 / Hfe=60-240 / fT(Hz)=30M / Pwr(W)=40 Original PDF 50.39KB 1
    2N5430
    Semelab Medium Power NPN Silicon Transistor - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=7 / Hfe=60-240 / fT(Hz)=30M / Pwr(W)=40 Original PDF 15.67KB 2
    2N5430
    API Electronics TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39 Scan PDF 226.44KB 2
    2N5430
    API Electronics Short form transistor data Short Form PDF 80.96KB 1
    2N5430
    API Electronics Short form transistor data Short Form PDF 238.23KB 2
    2N5430
    Crimson Semiconductor EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors Scan PDF 41.93KB 1
    2N5430
    Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF 85.47KB 1
    2N5430
    Diode Transistor Transistor Short Form Data - TO-3 Scan PDF 86.13KB 1
    2N5430
    General Transistor NPN Power Transistors Scan PDF 188KB 2
    2N5430
    Mospec POWER TRANSISTORS(7A,40W) - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=7 / Hfe=60-240 / fT(Hz)=30M / Pwr(W)=40 Scan PDF 135.87KB 3
    2N5430
    Mospec Medium-Power NPN Silicon Transistor Scan PDF 135.87KB 3
    2N5430
    Motorola The European Selection Data Book 1976 Scan PDF 55.78KB 1
    2N5430
    Motorola European Master Selection Guide 1986 Scan PDF 42.83KB 1
    2N5430
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 296.23KB 7
    2N5430
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 100.8KB 1
    2N5430
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 113.63KB 1
    2N5430
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.89KB 1
    2N5430
    Unknown Vintage Transistor Datasheets Scan PDF 57.87KB 1
    2N5430
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 85.03KB 1
    2N5430
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.87KB 1
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    2N5430 Price and Stock

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    Microchip Technology Inc 2N5430

    - Bulk (Alt: 2N5430)
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    Avnet Americas 2N5430 Bulk 48 Weeks 100
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    Mouser Electronics 2N5430 124
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    Newark 2N5430 Bulk 500
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    Microchip Technology Inc 2N5430 374 48 Weeks
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    Onlinecomponents.com 2N5430
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    Avnet Silica 2N5430 38 Weeks 1
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    EBV Elektronik 2N5430 49 Weeks 1
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    Master Electronics 2N5430
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    Central Semiconductor Corp 2N5430

    - Rail/Tube (Alt: 2N5430)
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    Avnet Americas 2N5430 Tube 8 Weeks 30
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    Solid State Inc 2N5430

    Trans GP BJT NPN 100V 7A 40000mW 3-Pin(2+Tab) TO-66
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    Bristol Electronics 2N5430 19
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    Texas Instruments 2N5430

    Transistor
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    Vyrian 2N5430 4,697
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    2N5430 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5430X

    Contextual Info: 2N5430X Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    2n5430xo213aa1-aug-02 PDF

    2N5629

    Contextual Info: Search Results Part number search for devices beginning "2N5430" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5430 NPN TO66 100V 7A 60 240 2/2 30MHz


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    2n54302n5430x30mhz2n5581+32n5581-jqr-b250mhz2n5629 PDF

    Contextual Info: 2N5430X Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    2n5430xo213aa30-jul-02 PDF

    2N3492

    Abstract: 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879
    Contextual Info: Device Type 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N5427 2N5428 2N5429 2N5430 2N6077 2N6078 2N6079 VCEO V 75 60 80 100 60 80 100 200 250 300 80 80 100 100 275 250 350 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/80 4.0


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    2n38792n34872n34882n3489+72n34902n34912n34922n53872n53882n5389to61 PDF

    2N5430

    Abstract: 2N5428
    Contextual Info: SavantIC Semiconductor Product Specification 2N5428 2N5430 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage : VCE sat =1.2V(Max)@IC=7A ·Excellent safe operating areas APPLICATIONS ·Designed for switching and wide-band


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    2n54282n543010mhz PDF

    2N5430

    Abstract: IC 386
    Contextual Info: SEME 2N5430 LAB MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. Designed for switching and wide - band amplifier applications 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 14.48 (0.570)


    Original
    2n54302n5430cecc200maic 386 PDF

    Contextual Info: 2N5430 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    2n5430freq30mtime100n PDF

    2N5430 MOTOROLA

    Abstract: 2443 MOTOROLA transistor IC CD 3102 2N5430 2N5428
    Contextual Info: MOTOROLA SC XSTRS/R 1HE F D § b3b?ES4 GDflMSMb 1 | MOTOROLA 2N5428 TECHNICAL DATA 2N5430 SEMICONDUCTOR thru 7 AM PERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage —


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    2n54282n5430o-213aac01lect0r-emitter+32n5430 motorola2443 motorola transistoric cd 3102 PDF

    2N4071

    Abstract: 2N6277 JANTXV 2N5626
    Contextual Info: BIPOLAR < O P EA K PACKAGE TO-213 10- 66 T0-204 (TO-3) DEVICE TYPE 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N566J*’ 2N5664*' 2H5665*’ 2N5427 2N5428 2N5429 2N5430 bvceo •c VOLTS 120 60 80 80 100 60 80 80 100 200 300


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    2n48642n55982n56002n5602+92n56042n56062n56082n56102n56122n5661t2n40712n6277 jantxv2n5626 PDF

    2n5430

    Abstract: 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4898 2N4899 2N4900
    Contextual Info: CRIMSON SEMICONDUCTOR INC Ti DE | E S m D T b 2514096 CRIMSON SEMICONDUCTOR INC 99D 00337 D ' " T “ 33-0/ EPITA XIA L PLANAR - TO-66 NPN PN P BUR10 * BUR11 * BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428 2N5429 2N5430 BUX78 2N4898 2N4899 2N4900 «CM V


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    bur10bur11bur12bux77+14bux782n49102n48982n49112n48992n49122n5430411 00337bdy57bu912to-59 packageboy90bur212n4900 PDF

    2N5430

    Abstract: 2N5427 2N5428 2N5429 transistor b 1560
    Contextual Info: MOS PEC MEDIUM-POWER NPN SILICON TRANSISITORS NPN 2N5427 Thru 2N5430 . designed for switching and wide-band amplifier applications FEATURES * DC Current Gain Specified to 7 Amperes. * Low Collector-Emitter Saturation Voltagev CE satf1-2V (M ax @ lc=7.0A


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    2n5427n5430n54272n5428+42n54292n5430curre5427transistor b 1560 PDF

    23581 i c

    Abstract: ax 23581 ax 23581 i c
    Contextual Info: Microsemi NPN Transistors Part Number NPN 2N5051 2N5052 TIP31 TIP31A TIP31B TIP31C 2N5074 2N5075 2N5076 2N5077 2N6121 2N6122 2N6465 2N6466 2N6474 2N6374 2N6373 2N6372 2N6288 2N6290 2N6292 2N5427 2N5428 2N5429 2N5430 2N6078 2N6077 2N6079 2N5730 TIP110 TIP111


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    t0-220o-22023581 i cax 23581+1ax 23581 i c PDF

    Contextual Info: S EM E 2N5430 LA B MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. Designed for switching and wide - band amplifier applications 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034)


    Original
    2n54302n5430cecc200ma PDF

    Contextual Info: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428


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    0dq0337bur10bur11bur12+6bux772n49102n49112n4912n54272n5428 PDF

    2N4116

    Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309
    Contextual Info: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850


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    fll34fc2n28802n28522n2851+92n2850-2n26582n28492n43092n43052n53362n41162n53042n2658 PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    mk135mk136mk137mk138+16mk139mk140mk142mk145mk155157krk2645k4005u664bmosfet k4005mb8719transistor mosfet k4004sn16880nstk5392str451bc417 PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845 PDF

    2N5336

    Abstract: 2N5428 2N5429 82mils 2N5337 2N5338 2N5339 2N5427 2N5430 CJD44H11
    Contextual Info: PROCESS CP219 Central Power Transistor TM Semiconductor Corp. NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 82 x 82 MILS Die Thickness 11 MILS Base Bonding Pad Area 13.2 x 19.7 MILS Emitter Bonding Pad Area 13.2 x 21.2 MILS


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    cp2192n53362n53372n5338+82n53392n54272n54282n54292n5430d44h1182milscjd44h11 PDF

    2N5385

    Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
    Contextual Info: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO


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    fls5402a2n5348o-1112n5349+82n53842n53852nxxxx2n54802n56722n5675to114 package2n5388 PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    od-80od-323ot-23ot-89+13ot-143ot-223ot-323triac 97a6s0805bh13003 transistor to220 equivalenttriacs bt 804 600vtriac bt 808 600cdiode sot-23 marking 15dzener diode 1n ph 486bs smd transistorz0409mf equivalentbt 808 600c PDF

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Contextual Info: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


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    mt-13ksd 166lt 7202 diodekertron+7la 4301transistor ksp 13 801kda 1.22n5085lt 7207ksp 13 8010/transistor ksp 13 801 PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492 PDF

    2N3583

    Abstract: 2N4296 2N4297 2N4298 2N4299 2N5427 2N5428 2N5429 2N5430
    Contextual Info: 1 1 0 J)L T R A N S I S T O R - CO • w - r w j ^ U I O D E ^ I H IN C A N S I A 4D S T O R C O D | 5646352 0D D D 13E 2 I M G - . . 8 4 P 1 3 2 D T > 3 2 » 0 5 ~ D1QDE TR^f\l515TQR CGJfUC. 201) 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561


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    inc770gdg1322n54272n5428+122n542930-12atts2n58382n58392n58402n39022n35832n42962n42972n42982n42992n5430 PDF