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2N5612 Datasheets (20)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N5612	Semelab	Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=5 / Hfe=30-90 / fT(Hz)=60M / Pwr(W)=25	Original	PDF	11.56KB	1
2N5612	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF	404.58KB	5
2N5612	API Electronics	Short form transistor data	Short Form	PDF	238.23KB	2
2N5612	API Electronics	TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39	Scan	PDF	226.44KB	2
2N5612	General Semiconductor	Low Frequency Transistors	Scan	PDF	69.45KB	1
2N5612	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	43.04KB	1
2N5612	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.47KB	1
2N5612	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	84.78KB	1
2N5612	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	154.66KB	1
2N5612	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	158.02KB	1
2N5612	Unknown	Transistor Replacements	Scan	PDF	84.9KB	1
2N5612	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	104.59KB	1
2N5612	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	115.01KB	1
2N5612	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	91.57KB	1

2N5612	PPC Products	Transistor Short Form Data	Scan	PDF	457.46KB	1
2N5612	Semico	NPN Silicon Power Transistor Selection Guide	Scan	PDF	84.66KB	1
2N5612	Silicon Transistor	Low Frequency Silicon Power Transistor	Scan	PDF	68.73KB	1
2N5612	Solidev Semiconductors	Solid State Products (Transistor Guide)	Scan	PDF	106KB	2
2N5612	Solitron Devices	Planar Power Transistor	Scan	PDF	678.74KB	11
2N5612A	Semelab	Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=5 / Hfe=30-150 / fT(Hz)=60M / Pwr(W)=25	Original	PDF	11.55KB	1

2N5612 Price and Stock

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Microchip Technology Inc 2N5612 Transistor BJT NPN 100V 5A TO-66 - Bulk (Alt: 2N5612)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N5612	Bulk		50 Weeks	100	1 - 10 - 100 $39.85 1000 $36.78 10000 $36.32	Buy Now
Mouser Electronics	2N5612					1 - 10 - 100 $44.18 1000 $44.18 10000 $44.18	Get Quote
Newark	2N5612	Bulk			500	1 - 10 - 100 - 1000 $40.16 10000 $40.16	Buy Now
Microchip Technology Inc	2N5612			50 Weeks		1 $40.16 10 $40.16 100 $40.16 1000 $40.16 10000 $40.16	Buy Now
Onlinecomponents.com	2N5612					1 - 10 - 100 $35.61 1000 $35.61 10000 $35.61	Buy Now

Master Electronics	2N5612					1 - 10 - 100 $35.61 1000 $35.61 10000 $35.61	Buy Now
Texas Instruments 2N5612 Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2N5612		4,410			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2N5612 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N5612 Contextual Info: 2N5612 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	2n5612 o213aa 1-aug-02	PDF
2N5612A Contextual Info: SavantIC Semiconductor Product Specification 2N5612A Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications	Original	2n5612a	PDF
Contextual Info: 2N5612A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	2n5612a o213aa 30-jul-02	PDF
2N5606 Abstract: 2N5610 2N5608 2N5612 5612 5610 npn Contextual Info: Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications	Original	2n5606 2n5608 2n5610 2n5612 +32n5608/5610 5612 5610 npn	PDF
2N4071 Abstract: 2N6277 JANTXV 2N5626 Contextual Info: BIPOLAR < O P EA K PACKAGE TO-213 10- 66 T0-204 (TO-3) DEVICE TYPE 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N566J’ 2N5664' 2H5665*’ 2N5427 2N5428 2N5429 2N5430 bvceo •c VOLTS 120 60 80 80 100 60 80 80 100 200 300	OCR Scan	2n4864 2n5598 2n5600 2n5602 +92n5604 2n5606 2n5608 2n5610 2n5612 2n5661t 2n4071 2n6277 jantxv 2n5626	PDF
2N5606 Abstract: 2N5608 2N5610 2N5612 Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications	Original	2n5606 2n5608 2n5610 2n5612 +22n5608/5610 2n5606/5610	PDF
2N5611 Abstract: 2N5612 100v audio amplifier Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5611 DESCRIPTION •DC Current Gain: hFE= 30-90@IC= -2.5A ·Wide Area of Safe Operation ·Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·Complement to Type 2N5612	Original	2n5611 -100v 2n5612 -50ma +2-120v 100v audio amplifier	PDF
2N5612A Contextual Info: Inchange Semiconductor Product Specification 2N5612A Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications	Original	2n5612a	PDF
2N3507 JANTX Abstract: 2N5541 2N6235 jedec Package TO-39 2n554 2n523 Contextual Info: lc = 5.0AMPS CONTINUED DEVICE TYPE ««2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 2N5239 2N5336 2N5337 2N5338 2N5339 2N5487 2N5487 1 2N5488 2N5488 1 2N5541 2N5606 2N5608 2N5610 2N5612 2N5729 2N6233 2N6234 2N6235 *PD @ T C	Original	2n4150 2n4240 2n4395 2n4396 +122n4897 2n4913 2n4914 2n4915 2n5152 2n5154 2n3507 jantx 2n5541 2n6235 jedec package to-39 2n554 2n523	PDF
2N5612A Contextual Info: 2N5612A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	2n5612a o213aa 1-aug-02	PDF
2N5606 Abstract: 2N5608 2N5610 2N5612 5610 Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications	Original	2n5606 2n5608 2n5610 2n5612 +22n5608/5610 5610	PDF
Jantxv2N5666S Contextual Info: Microsemi NPN Transistors Part Number 2N1485 2N1486 2N4910 2N4911 2N4912 2N5606 2N5610 2N6352 2N5612 2N6353 2N3018 2N4300 2N5662 JAN2N5662 JANTX2N5662 JANTXV2N5662 , 2N5663 JAN2N5663 JANTX2N5663 JANTXV2N5663 2N5666 2N5666S JAN2N5666 JAN2N5666S JANS2NS666 JANS2NS666S	OCR Scan	t0-220 o-22q npn-11 jantxv2n5666s	PDF
Contextual Info: 2N5612 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	2n5612 o213aa 30-jul-02	PDF
LC51 Contextual Info: HI-REL SEUELAB SEMELABE BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 2N5611 2N5612 2N5613 2N5614 2N5615 2N5616 2N5617 2N5618 2N5619 2N5620 2N5621 2N5622 2N5623 2N5629	OCR Scan	a1331 2n5602 2n5603 2n5604 +72n5605 2n5606 2n5607 2n5608 2n5609 2n5610 lc51	PDF

JAN2N3996 Abstract: 2N4307 ISM22 2n3183 Contextual Info: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100	OCR Scan	jan2n3996 2n4307 ism22 2n3183	PDF
BD119 Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20	Original	ad818 ad818die ad820 ad821 +12ad820die o-204aa/to-3 bd119 bc148a apt1002rbnr 1000 volt npn bd109 apt5025an apt904r2bn bd107 apt1001r3an apt1004rbnr	PDF
2N5385 Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388 Contextual Info: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO	OCR Scan	fls5402a 2n5348 o-111 2n5349 +82n5384 2n5385 2nxxxx 2n5480 2n5672 2n5675 to114 package 2n5388	PDF
Contextual Info: r le = 5.0 AMPS CONTINUED DATA P D@ 100°C <§> BVeb0 VOLTS JZ DEVICE VcE VcE sat @ lc SHEET 5.0 0.75 4.5 4.5 0.5 0.075 0.8 0.8 15 15 4.0 4.0 1.0 1.0 1.0 2.5 2.5 2.5 0.25 0.25 0.25 4.0 4.0 4.0 5.0 5.0 5.0 10.0 1.5 1.5 0.6 0.9 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5	OCR Scan	2n4150 2n4240 2n4395 2n4396 +62n4913 2n4914 2n4915 2n5152 2n5154 2n5237	PDF
1N5438 Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi	OCR Scan	27tfc 1n5438 tfc 5630 2n5161 +7germanium 2n4193 1n1319 a2023 transistor 2n217 1n5159 transistor bf 175	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	an-784a la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode lt 7229 +72sd323 ym 7137 3d da 3807 pdf transistor inverter welder 4 schematic 2n5630 thyristor br 403 1n3492	PDF
Contextual Info: ^zmL-Conductoi {Pioducti, fine. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5611 DESCRIPTION • DC Current Gain: hFE= 30-90@lc= -2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage: VCEO(SUS)=-100V(Min)	Original	2n5611 -100v 2n5612 n5611 +2-50ma -120v	PDF
SILICON TRANSISTOR CORP Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060 Contextual Info: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP TVS07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V	OCR Scan	8e54022 fe20-120 30mhz ftto40m +1550mhz 2n4863 2n5662 n5663 2n5333 silicon transistor corp stp515 2n4114 2n4211 2n5609 transistor 2n5627 2n5678 2n5251 2n5609 stp6060	PDF
germanium transistor Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006 Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types	OCR Scan	germanium transistor 2n5121 2n5418 2n5539 +32n5637 v2205 mm8006	PDF
2N3920 Abstract: TO61 2N5330 2N5542 2N2812 2N3919 2N5049 2N5083 2N5084 2N5313 Contextual Info: 8134693 S E M ICOA 40 dF \| G00D1E7 S NPN SILIC O N POW ER T R A N SIS T O R S C o n t’d M axim um R a tin gs D e vic e Typ e N o . NPN 2N5049 2N3919 2N3920 2N5083 2N5084 2N2.811 2N2812 2H5317 2N5313 2N5552 2N561C 2N5085 2N5329 2K5659 2R2813 2N2814 2N5658	OCR Scan	2n5049 2n3919 2n3920 2n5083 +92n5084 2n2812 2h5317 2n5313 2k5552 2n6340 to61 2n5330 2n5542	PDF

2N5612 Search Results

2N5612 Datasheets (20)

2N5612 Price and Stock

Microchip Technology Inc 2N5612

Texas Instruments 2N5612

2N5612 Datasheets Context Search

2N5612

2N5612A

2N5606

2N4071

2N5606

2N5611

2N5612A

2N3507 JANTX

2N5612A

2N5606

Jantxv2N5666S

LC51

JAN2N3996

BD119

2N5385

1N5438

la 4440 amplifier circuit diagram 300 watt

SILICON TRANSISTOR CORP

germanium transistor

2N3920