2N4864 Search Results

Contextual Info: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050

2N4863A

Abstract: 2N4862 2N4863 2N4864
Contextual Info: 0043 592 A P I ELECTRONICS : 93A004S T -2 7 -0 9 TNC P I ELECTRONICS INC De | O O ^ S I S POWER TRANSISTORS ENGINEERING BULLETIN • GG_GGG4ê "1 2N4862/2N4863/2N4864 TYPE 2N 4862, 2N4863, 2N 4864,2 AMP NPN SILICON PLANAR POWER TRANSISTORS wgm T E R M IN A L C O N N E C T O N S

2N4864

Contextual Info: 2N4864 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

Contextual Info: i, {Jnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistors 2N4864 DESCRIPTION •With TO-66 package •Continuous collector current-lc=2A •High VCEo:120V (Min) APPLICATIONS

2N4862

Abstract: 2N4863 TG70 2N4864 Pirgo Electronics 95a0 95A048
Contextual Info: 0043 592 A P I ELECTRONICS TNC 95A0 48 T-g7-09_ P I ELECTRONICS INC . T3 DE 1^0435^2 DOOOOMfl T POWER TRANSISTORS ENGINEERING BULLETIN ID 2N4862/2N4863/2N4864 TYPE 2N 4862, 2N 4863, 2 N 4 8 6 4 ,2 AMP NPN SILICON PLANAR POW ER TRANSISTORS

2N4863

Contextual Info: General 3^ Semiconductor ^ » Industries, Inc. 2N4863 2N4864 SILICON NPN TRANSISTORS These double diffused, epitaxial collector devices are oxide passivated. They are designed for use in switching and many amplifier applications. The latest technologies are used to provide optimum performance and the highest degree of reliability.

GSTU4040

Abstract: 2n6547 jantx
Contextual Info: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0

2N4071

Abstract: 2N6277 JANTXV 2N5626
Contextual Info: BIPOLAR < O P EA K PACKAGE TO-213 10- 66 T0-204 (TO-3) DEVICE TYPE 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N566J*’ 2N5664*' 2H5665*’ 2N5427 2N5428 2N5429 2N5430 bvceo •c VOLTS 120 60 80 80 100 60 80 80 100 200 300

2N4864

Contextual Info: SavantIC Semiconductor Product Specification 2N4864 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=2A ·High VCEO:120V Min APPLICATIONS ·For use in general-purpose switching and linear amplifier applications

Contextual Info: 2N4864 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2N4863

Abstract: 2N4862 2N4864 TG70
Contextual Info: 0043 592 A P I ELECTRONICS 95A0 48 T-g7-09_ TNC P I ELECTRONICS INC . T3 DE 1 ^ 0 4 3 5 ^ 2 DOOOOMfl T POWER TRANSISTORS ENGINEERING BULLETIN ID 2N4862/2N4863/2N4864 TYPE 2N 4862, 2N 4863, 2 N 4 8 6 4 ,2 AMP NPN SILICON PLANAR POW ER TRANSISTORS

2n5430

Contextual Info: A POW ERHOUSE BIPOLAR VCE sat max VOLTS 2N4864 120 2.0 50-150 0.5/5.0 0.2 0.5/0.05 2N5598 60 2.0 70-200 1.0/5.0 0.85 2.0/0.2 2N5600 80 2.0 30- 90 1.0/5.0 0.85 2.0/0.2 2N5602 80 2.0 70-200 1.0/5.0 0.85 2.0/0.2 2N5604 100 2.0 30-90 1.0/5.0 0.85 2.0/0.2 *2N5606

2N4864

Contextual Info: Inchange Semiconductor Product Specification 2N4864 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=2A ·High VCEO:120V Min APPLICATIONS ·For use in general-purpose switching and linear amplifier applications

Contextual Info: BIPOLAR NPN PLANAR POWER TRANSISTORS TO-213 TO-66 'c VOLTS AMPS hFE min/max V CE (sat) max VOLTS •c @ 'b A A 2N4864 120 2.0 50-150 0.5/5.0 0.2 0.5/0.05 2N5598 60 2.0 70-200 1.0/5.0 0.85 2.0/0.2 2N5600 80 2.0 30- 90 1.0/5.0 0.85 2.0/0.2 2N5602 80 2.0 70-200

2N4250

Abstract: t0106 2N4142 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260
Contextual Info: 0258354 ADVANCED SEMIC C IS l ^ o k l " Jcnj,v',t a d v a n ce d Ü D Ë TRANSISTORS 1 Po @ T c = 2 5 ° C DEVICE TYPE NO. 2N4142 2N4143 2M4150 2N4207 2N4208 2N4209 2N4210 2N4227 2N4228 2N4231 2N4232 2N4233 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4248

2N1718

Abstract: 2N1720 2N1714
Contextual Info: 8440355 SPACE POWER SPACE POWER 89C ELECTRONICS 00098 D J^JS~0 DE | 5440355 ODOOOIA 0 Hi-Rel PLANAR P O W E R — 2 AMP NPN ELECTRONICS FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T ENGINEERING MOTES I (Three Leads (Dim. .011 mln. and .019 aax.) applies between (.050

2N2991

Abstract: 2N2992 2N2993 2N2994 2N3665 2N3766 2N3767 2N3917 2N3918 2N4000
Contextual Info: 0043592 A P I ELECTRONICS A P I ELECTRONICS INC 26C 00 2 1 8 I NC lit . DE I OOMBS^a ODODaia ñ COLLECTOR CURRENT = 2 AMPS NPN TYPES - CONTINUED Device No 2N2991 Case T O -5 STUD T O -5 STUD T O -5 STUD TO -5 STUD T O -5 T O -5 T O -66 T O -66 T O -3 TO -3

2N3907

Contextual Info: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028

SDT423

Contextual Info: _ 8 3686 02 SO LITRON D EV IC ES INC_ 95D 02758 SOLITRON DEVICES INC T5 D — T"“- 3 3 - 0 / Ïm F | ù3bflbD2 00D57SA S | T i - t^WÊÊÊFBlË • P L A N A R P O W ER TR A N S IS TO R S % 5m O < M M DEVICE TYPE hpE MIN/MAX @ ic A

pg2010

Abstract: PG1083 PG2020 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG2001
Contextual Info: Linear hFE from 10 mA to 2 amps Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi.„,i to 160 volts 'M h '.4 M T O —46 T O —46 T O —4 6 T O —4 6 T O —46 T O —4 6 S iîS $*‘v>

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

semelab 2n4401

Contextual Info: — -

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

Contextual Info: 1 1 1 ESSOELECTRONICS, INC. PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES ì 1 ] ] ] 1 1 11 1 1 1 fl 1 1 Device No 2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719 2N1720 2N1721 2N1B89 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989