2N5610 Search Results

2N5610

Contextual Info: 2N5610 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2N5606

Abstract: 2N5610 2N5608 2N5612 5612 5610 npn
Contextual Info: Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications

2N4071

Abstract: 2N6277 JANTXV 2N5626
Contextual Info: BIPOLAR < O P EA K PACKAGE TO-213 10- 66 T0-204 (TO-3) DEVICE TYPE 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N566J*’ 2N5664*' 2H5665*’ 2N5427 2N5428 2N5429 2N5430 bvceo •c VOLTS 120 60 80 80 100 60 80 80 100 200 300

2N5606

Abstract: 2N5608 2N5610 2N5612
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications

2N3507 JANTX

Abstract: 2N5541 2N6235 jedec Package TO-39 2n554 2n523
Contextual Info: lc = 5.0AMPS CONTINUED DEVICE TYPE ««2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 2N5239 2N5336 2N5337 2N5338 2N5339 2N5487 2N5487 1 2N5488 2N5488 1 2N5541 2N5606 2N5608 2N5610 2N5612 2N5729 2N6233 2N6234 2N6235 *PD @ T C

2N5606

Abstract: 2N5608 2N5610 2N5612 5610
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications

Jantxv2N5666S

Contextual Info: Microsemi NPN Transistors Part Number 2N1485 2N1486 2N4910 2N4911 2N4912 2N5606 2N5610 2N6352 2N5612 2N6353 2N3018 2N4300 2N5662 JAN2N5662 JANTX2N5662 JANTXV2N5662 , 2N5663 JAN2N5663 JANTX2N5663 JANTXV2N5663 2N5666 2N5666S JAN2N5666 JAN2N5666S JANS2NS666 JANS2NS666S

Contextual Info: 2N5610 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

LC51

Contextual Info: HI-REL SEUELAB SEMELABE BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 2N5611 2N5612 2N5613 2N5614 2N5615 2N5616 2N5617 2N5618 2N5619 2N5620 2N5621 2N5622 2N5623 2N5629

JAN2N3996

Abstract: 2N4307 ISM22 2n3183
Contextual Info: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20

2N5385

Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
Contextual Info: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO

Contextual Info: r le = 5.0 AMPS CONTINUED DATA P D@ 100°C <§> BVeb0 VOLTS JZ DEVICE VcE VcE sat @ lc SHEET 5.0 0.75 4.5 4.5 0.5 0.075 0.8 0.8 15 15 4.0 4.0 1.0 1.0 1.0 2.5 2.5 2.5 0.25 0.25 0.25 4.0 4.0 4.0 5.0 5.0 5.0 10.0 1.5 1.5 0.6 0.9 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5

KSD 166

Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
Contextual Info: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

BD160

Abstract: 2SC3303 2SD1147 to-53 2sb550
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .

SILICON TRANSISTOR CORP

Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
Contextual Info: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V

2N3026

Abstract: 2N3025 2N5002 2N5004 2N5074 2N5075 2N5076 2N5077 2N5148 2N5150
Contextual Info: I _ 12 E tljíJ E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No C ase 2N5002 TO 111/1 TO111/1 TO111/1 TO 111/1 TO 111/1 TO 111/1 TO -5 TO-5 TO 111/1 TO 111/1 TO -39 TO -39 TO-39 T O -39 TO -66 TO -66 TO-66 TO -66 TO-5

SDT85502

Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
Contextual Info: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913

2N3021

Abstract: 2N3025 2N3026 2N5076 TO111 package 2N5002 2N5004 2N5074 2N5075 2N5077
Contextual Info: 12 u l í u ELECTRONICS, INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No C ase 2N5002 T0111/1 TO111/1 TO111/1 TO 111/1 TO 111/1 TO 111/1 TO -5 TO-5 TO 111/1 TO 111/1 TO -39 TO -39 TO-39 T O -39 TO -66 TO -66 TO-66 TO -66 TO-5 TO-66 TO-66 TO-66

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK