2N4915 Search Results

2N4913

Abstract: 2N4915 2N4914 2N4906
Contextual Info: TYPES 2N4913, 2N4914, 2N4915 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS P nj FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4904 THRU 2N4906 • 87.5 W at 2S°C Case Temperature • 5 A Rated Collector Current

2N4915

Contextual Info: 2N4915 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N4915

Abstract: LE17 8302
Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR 2N4915 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

2N4904

Abstract: 2N4906 2N4913 2N4915 2N4905 2N4914
Contextual Info: Datasheet 2N4904 THRU 2N4906 PNP 2N4913 THRU 2N4915 NPN Cpntral C O M P L EM EN T A RY SILICON POWER T R A N SISTORS sem ico n d u cto r c o ip . 145 A d a m s Avenue, Hauppauge, N Y 11788 U S A Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors

diode zener c25

Abstract: zener DIODE C25 c25 zener diode 2n4915
Contextual Info: ISCFdÈù=Rlù=Rl text/html About News Contact keyword search: Employment Site Home part number search: 2N4915 #23235 RFQ/Sample Package NPN Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi Maximum Electrical Rating

2N4906

Abstract: 2N4915
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N4915 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 1.5V(Max.)@ IC= 5A ·DC Current Gain: hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4906 APPLICATIONS ·Designed for general purpose use in power amplifier and

Contextual Info: ^vnl-dontLusto 20 STERN AVE. SPRINGRELO, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2902 (212) 227-6008 FAX (973) 376-8980 2N4915 (SILICON) NPN power transistors for use in power amplifier and switching circuits. Complement to PNP 2N4M8. MAXIMUM RATINGS Symbol

Contextual Info: 2N4915 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N4915 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR 2N4915 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: 2N4915 Si NPN Power BJT 1.65 Transistors Bipolar Silicon NPN Power. 1 of 1 Home Part Number: 2N4915 Online Store 2N4915 Diodes Si NPN Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N4906

Abstract: 2n4915
Contextual Info: 2N4904 2N4905 2N4906 2N4913 2N4914 2N4915 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4904, 2N4913 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed

2N4915

Abstract: 2N4914 2N4913
Contextual Info: SavantIC Semiconductor Product Specification 2N4913 2N4914 2N4915 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N4904/4905/4906 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications.

2N4906

Abstract: 2N4904 2N4905
Contextual Info: TYPES 2N4904, 2N4905, 2N4906 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS F O R P O W ER -A M P LIFIER AND H IGH -SPEED -SW ITCH IN G A P P LIC A T IO N S D ES IG N ED F O R C O M P LE M EN T A R Y U SE W ITH 2N4913, 2N4914, 2N4915 Z Ä z • 87.5 W at 25°C Case Temperature

TO111

Abstract: 2N3850 2N3928 2N43 2N4231 TO-111
Contextual Info: high-rei power transistors 84 SILICON NPN TRANSISTORS 5 Amp BREAKDOWN VOLTAGE TYPE NUMBER CASE SIZE VeB VCE VEB 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232 2N4233 2N4300 2N4913 2N4914 2N4915 2N4998 2N5000

2N4913

Contextual Info: 13 4 é 9 3 ¿‘EHI Cu A SEMICOA GENERAL DESCRIPTION ARB NPN SILICON TRIPLE OÖ1 0 Ï 2N4913 * 2N4914 2N4915 2N4914, A N D 2N4915 DIFFUSED POWER TRANSISTORS MEDIUM SPEED SWITCHING, DRIVER AMPLIFICATION APPLICATIONS T - DE | f l l B 4 b c]3 0 0 0 D D 1 0 b "|~f

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N5866

Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
Contextual Info: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75

NES 2N5672

Abstract: 2N4904 5330-30 D0D00S4 2N5867 2N3713 2N3714 2N3715 2N3716 2N3789
Contextual Info: NE 111 E N G L A N D SEMICONDUCTOR STE » • LSbHTTa D0D0054 434 « N E S '7 > 3 5 - o / = 3 -5 0 A VcEO SUS = 4 0 -1 0 0 V fx = 2-6 M Hz lc(MAX) PIMP TO-3 Case 8 0 3 Case 8 0 4 Type No. NPN Complé­ ment VCEO <V) 1C (MAX) (A) (SUS> VCE (SAT) tlFE IC/VCE

Contextual Info: mÎ æ J E L E C T R O N I C S , IN C. / -11 COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 Case TO1 1 1 /1 TO- 2N3752 2N3850 TO- 2N3851 2N3852 VcBO VCEO bus Volts Volts 80 60 V e BO Volts ’E Min hi Max 8 100 300 VCE 5 Vb e (sat) 1

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10

transistor 40411

Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
Contextual Info: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

2N3713

Abstract: 2n3055 complement 2N5068 2N3055 2N3714 2N3789 2N3790
Contextual Info: TRANSISTORS—POWER NPN TO—3 PACKAGE VOLTS *c AMPS MIN MAX 2N5067 40 5 20- 80 @ 1.0 1.5 @ 5 87.5 4.0 2N4901 2N4913 40 5 25 - 100 @ 2.5 1.5 @ 5 87.5 4.0 2N4904 2N5301 40 30 15- 60 @ 2.0 @ 20 2.0 2N4398 2N5068 60 5 20- 80 @ 15 1.0 1.5 @ 5 87.5 4.0 2N4902 2N4914