2N3788 Search Results

SOLID POWER CORP

Abstract: 2N3902 2N3788
Contextual Info: 8365700 SOLIO POWER CORP 95 C 0 0 1 0 8 S O L ID PODER CORP "is l~" 3 3 - o ! o DüT|ñ3bS7G0 DODOlOñ 3 HIGH VOLTAGE TRANSISTORS @ @ le VCEO le o O M AX SUS V MA A 2.0 325 3.5 325 100 3.5 4ÛÔ O O PT @ 25°C Watts 2N3788 100 12N3902 100 12N5157 1Ô0 ♦Vcex @ 25°C

2N3902

Abstract: 2N5157 2N515 HFI9 l5a1 2N3788
Contextual Info: A P I ELECTRONICS INC 00433^2 Goooaab soo LIE D mine T -3 * I 3 HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. Ic 325 15 4ÖÖ 1ÔÔ 20 @ 25°C 325 V MA 400 400 5ÔÔ VcEX @ 9 @ lo o in 3.5 100 100 V ceo q ' su s V MA MAX Watte A 2N3788 1Q0 2N3902 100 2N5157 1ÔÔ

Contextual Info: HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. @ Ic VCEO Ic is Y M ÀX sui V MA Watts A 2N3788 1Q9 2N3902 100 2N5157 1ÖÜ V lao MA @ V cex Ic 125°C MA V ?25 100 400 5-9 325 100 400 .25 700* 2.5 4ÖÖ 1ÔÔ 5ÔÔ .25 7ÜÜ* .5 2,0 3.5 15 *Vcex @ 25°C @ Veto

2N3751

Abstract: 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929
Contextual Info: A P I ELE C TR ON IC S INC 2b 00^3592 A P I ELECTR ONI CS ¡>T| 00435^2 DQGD223 1 | INC 26C 00223 D - f ’-3 3 -& I COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No 2N3751 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929 2N3996 JAN

tca 765

Abstract: 2N3902 2883 TCA 325 A to-53 2N3788 2N5157 Beta SL
Contextual Info: HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. @ Ic VCEO Ic is Y M À X su i V MA Watts A 2N3788 1Q9 2N3902 100 2N 5157 1ÖÖ *V cex @ 2,0 3.5 15 25°C @ Veto V @ lao V cex Ic 125°C MA V MA Hfe ?25 100 400 5-9 325 100 400 .25 7 00* 2.5 4ÖÖ 1ÔÔ 5ÔÔ .25 7ÜÜ* .5

JANTX2N5157

Abstract: 2N3445
Contextual Info: Microsemi NPN Transistors Part Number 2N6316 2N3788 2N5838 2N5839 2N5840 JANTXV2N3902 2N3902 JAN2N3902 JANTX2N3902 2N5157 JAN2N5157 JANTX2N5157 JANTXV2N5157 2N5240 2N6542 2N6543 2N5049 2N5006 2NS008 2N5048 JANS2N5239 2N6563 2N6562 2N6569 2N5412 2N3597 2N3598

SDT5055

Abstract: SDT5001 SDT5052 SDT5505 Datasheet SDT5554 SDT5010 SDT5513 2N2150 2N2151 2N3788
Contextual Info: hFE V Device VCEO @ IC A CE (sat) @ IC (A) Type (V) Min/Max Max (V) 2N2150 80 20/60 1.0 1.25 1.0 2N2151 80 40/120 1.0 1.25 1.0 2N3788 325 20/180 0.5 1.00 1.5 2N3917 40 30/120 1.0 1.20 1.0 2N3918 40 100/300 1.0 1.20 1.0 2N4300 80 30/120 1.0 0.50 0.2 2N4862

SDT423

Abstract: 2N3021 2N5076 2N5666 SDT5055 2N2150 2N2151 2N3788 2N3917 2N3918
Contextual Info: m |p tu)©Tr ©Aim ® i_ B-2 VCE sat) @ MAX (V) ic (A) IT MIN (MHz) Pj MAX (W) CASE TYPE CHIP TYPE 2N2150 2N2I51 2N3788 2N3917 2N3918 80 80 325 40 40 20/60 40/120 20/180 30/120 100/300 1.0 1.0 0.5 1.0 1.0 1.25 1.25 1.00 1.20 1.20 1.0 1.0 1.5 1.0 1.0

2N3902

Abstract: 2N3902 JANTX 2n5157 2N3788
Contextual Info: HIGH VOLTAGE TRANSISTORS TO pt TYPE NO. lc lc Veto u i. SÜS MAX MA V 2d n A 100 *V ce x 2,0 325 325 400 3.5 3.5 109 100 o o 2N3788 10Q 2N3902 2 n 5157 100 <$ le VCEO ICEO V cex 125eC MA MA V V 100 5-9 .25 700* 2.5 .25 7 o o ' .5 400 500 •+JAN and JANTX

DTS-425

Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
Contextual Info: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce

2N5866

Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
Contextual Info: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10

2N4122

Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
Contextual Info: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741

2N3016

Abstract: 13421 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1
Contextual Info: 17 SILICON POWER TRANSISTORS CURREN T G A IN S A TURATIO N VO LTAG ES 8> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M A X. V CE 'c V A V CE s V BE(s) V I V *C A I *B A 5 AMP SILICON NPN 2 N2657 2N2658 2N2850-1 TO-5 TO-5 TO-5 80 100 100 60

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

2N3055

Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
Contextual Info: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

BUX79

Abstract: SML424 40322 GE 2sc3233 2SC1504 DTS801 STS401 SML425 BU226 DTS-801
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(BR)CE on PD Max hFE fT ON) Min (Hz) ICBO t()N r Max Max (A) (s) Max (Ohms) (CE)sat T Oper Package Style Max (°C) Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

JANTX2N

Abstract: jan2n1482 15218 Jan2N3055
Contextual Info: ,' O r N i f i y û N C 0 i n \ Û N C Û J ' O r f N ^ T - i n C 0 î ' C 0 f f ' r m o ^ o r N r n ^ L n \ D h s . o o O ^ O O N N N N N N N r r r r - r ( N f N ( N ( N < N ( N ( N i N i n i n r inhvCO^rnrnrOrnrOrnm^'kO . , , , . , . , . , . s) N

2N3016

Abstract: SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720
Contextual Info: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40