2N3752 Search Results

Contextual Info: mÎ æ J E L E C T R O N I C S , IN C. / -11 COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 Case TO1 1 1 /1 TO- 2N3752 2N3850 TO- 2N3851 2N3852 VcBO VCEO bus Volts Volts 80 60 V e BO Volts ’E Min hi Max 8 100 300 VCE 5 Vb e (sat) 1

2n3749

Abstract: 2N3744 2N3751 2N3747 2N3750 2N3748 2N3752 Pirgo Electronics 2N3759
Contextual Info: #*"*-: A P I ELECTRONICS INC ^3 |p a ? % D E | G D 4 3 S c]a □DD0Q44 1 r-3 3 ^ THRU 2N3752 POWER TRANSISTORS ENGINEERING BULLETIN pgggg"*r ,".r.^!.lM^'*"7 'T tV ^ y « ^ 2N 3744^ TYPE 2N3744 THRU 2N3752, 5 MâP NPN SILICON PLANAR POWER TRANSISTORS SEATING P L A N E -

solitron transistors

Abstract: SOLITRON DEVICES
Contextual Info: SOLITRON DEVICES INC “4 / - ' tl v - ,„ • -Ä - - * - 8 3 6 8602 v . " «¿-" ' V1- SOLITRON DEVICES - c »F|fl3böbDa OaOD47t, 7 •• v ; ^ - : ' -• :W i m -1- " - - - - - - -i • -^ 61C 00476 INC. D POWER TRANSISTORS 2N3750 2N3751 2N3752

SDT85502

Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
Contextual Info: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913

2N3751

Abstract: 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929
Contextual Info: A P I ELE C TR ON IC S INC 2b 00^3592 A P I ELECTR ONI CS ¡>T| 00435^2 DQGD223 1 | INC 26C 00223 D - f ’-3 3 -& I COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No 2N3751 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929 2N3996 JAN

TO111

Abstract: 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929 2N3996
Contextual Info: mÎ æ J E L E C T R O N I C S , IN C. / -11 COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 Case TO1 1 1 /1 TO- 2N3752 2N3850 TO- 2N3851 2N3852 2N3853 2N3928 2N3929 2N3996 VcBO VCEO bus Volts Volts 80 60 V e BO Volts ’E Min hi Max 8

2N3997 JAN to-111

Abstract: 2N4116 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929
Contextual Info: MJæ J E LE C T R O N IC S , INC. [ - t i COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929 2N3996 JAN 2N3996 JTX 2N3996 JTXV 2N3996 2N3997 JAN 2N3997 JTX 2N3997 JTXV 2N3997 2N3998 JAN 2N3998

2N5006

Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
Contextual Info: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1

Contextual Info: General Transistor Corporation CASE le max = 10-20A NPN Power Transistors V c e o (s u s ) • ISOLATED COLLECTOR VCEO VCE(SÀT) IC/1B (V0A/A) M 1C (mu) (A) 2N5006 2N5008 2N5288 2N5289 B0 80 100 100 10 10 10 10 30-90 @ 5/5 70-200 @ 5/5 30-90 @5/5 70-200 @5/5

2N3186

Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1

2N2999

Contextual Info: r\ NPN TO-11t/TO-59 DIODL IKANSISTOR CO ñ4D INC 84D D | Bfl4fl3S5 D D Q O I S ? 00127 D -7 ~ ^ T j ^ 6 7 • s ra n ia is T Q R ra.ir\ic. 201 6864)400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-676-5863 PNP C om ple­ VCEOfSUS)

JAN2N3996

Abstract: 2N4307 ISM22 2n3183
Contextual Info: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100

2N4116

Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309
Contextual Info: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850

2N5075

Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
Contextual Info: GENERAL TRANSISTOR CORP 34E D 3^50001 GOQGQfe.T 7 * ~ F - 3 3 ~ 0 l General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 NPN Power Transistors ISOLATED COLLECTOR 1C

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

2N5076

Abstract: 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N4116
Contextual Info: NEIII ENGLAND SEMICONDUCTOR STE D • b5b4^3 □□□□OSa QflT B i NES ' 7 2N5006 VCEO SUS (V) 1C (MAX) W tlFE IC/VCE (min-max ® A/V) VBE (SAT) ® IC/lB (V @A/A) TC = 100 °C (Watts) 1 = 1 B6C (A ® V) ff tON @ ICJlB tOFF ® IC/lB (MHz) (¿is @ A/A)

BD160

Abstract: 2SC3303 2SD1147 to-53 2sb550
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .

T100C

Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2N4116

Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
Contextual Info: NEW E N G L A N D S E M I C O N D U C T O R STE D • b5b4^3 OOODOSfi DAT * N E S 3 VCEO SUS (V) 1C (MAX) W - / NPN TO-61 = 10-20A VcEO(SUS) = 8 0-1 00V fT = 10-50 MHz lc (M A X ) Type No. 3 ISOLATED COLLECTOR Case 8 0 6 tlFE 0 IC/VCE (mln-max @ A/V) VCE (SAT)

Contextual Info: i im m u m ' * i I ELECTRONICS INC ^ '.Mv^ M S 0043592 S A P I p pwwpw I f * , •■ w 0D43SC ]E DDDDD1D tbi g|?' .- .o <Lr ;\ .;L L * u u u u u j j u ELECTRONICS ’StTPS'to .^-^*1 INC ^ s-i-=a 93A0010 T-3 3 -0 1 — “sS' T “ — l 5 AM P 'it r 4 1I,5“1-" ^

2N3016

Abstract: SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720
Contextual Info: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40