2N5304 Search Results

2N4116

Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309
Contextual Info: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850

MJ480

Abstract: motorola MJ480 2n4913 motorola 2N4232 MJ2802 2n4233 2n5878 2n4912 2N5872 MJ481
Contextual Info: MOTOROLA SC BM {DIO DES/OPTO } 6367255 MOTOROLA SC DE|t,3b72SS □OaTTSl DIODES/OPTO 3 ^ 3 7 SILICON POW ER TR A N SISTO R DICE (continued) 2C6316 DIE NO. — NPN LINE SOURCE — PL500.418 NPN 3 ^ D O / 2C6318 / / PNP g51 DIE NO. — PNP LINE SOURCE — PL500.419

BA101D

Abstract: J04075 sars0 S0146 2N5529 2N6482 B40-12A SGSIF464 TIP542 acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC3748 BOlllA BOlllA 2N5327 SFT6200 (A) 2N5328 SMl2168 BU100A ~~~~~-O5 25 30 SVT250-05 SVT250-05 SVT300-05 SVT300-05 SVT300-05 S01457 2S01443 2S01445 2SD~:5A 35 40 TIP543 TIP543 2N5940 2N5939 TIP542

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: 8134693 SEMICOA MO DÉ 5 1 3 ^ 3 QDDOIEb 3 -Q\ NPN SILICON POWER TRANSISTORS Cont’d) Maximum Ratings Device Dissipation Type No. @ 25°C NPN (Case) Watts 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337 2N1617 2N4897 2N4150 2N5152

in5388

Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor

2N6309

Abstract: pn junction DIODE 1N4001 Graph of Length vs Thermal resistance of Heat sink Mullard technical communications 2N3053 characteristic curves 2N5983 equivalent AN569 pin details of 2N5190 2N5304 2N5974
Contextual Info: AN569/D Transient Thermal Resistance General Data and Its Use Prepared by: Bill Roehr and Bryce Shiner ON Semiconductor Applications Engineering http://onsemi.com APPLICATION NOTE Introduction For a certain amount of dc power dissipated in a semiconductor, the junction temperature reaches a value

2N5133

Abstract: 2N6179 2N5121 2N5130 2N6181 2N6178 2n5134 2N6180 2Ns401 2n5296 transistor
Contextual Info: DIGITRON ELECTRONIC CORP 3bE D H SflMatO? -J/ -"<* y -'û ] DDDDODt, _ Page blQITRON ELKTRONIQ #6 CORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No. JOHN J . SCHWARTZ ENGINEERING D I G I T R O N E L E C T R O N I C S , C OR P.

1N5160

Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A