2N2851 Search Results

2N3186

Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1

2N4116

Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309
Contextual Info: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

T100C

Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1

2N2891

Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1

2N2856

Contextual Info: COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-2 2N2849-3 2N2850 2N2850-1 2N2850-2 2N2850-3 2N2851 2N2851-1 2N2851-2 2N2851 -3 2N2852 2N2852-1 2N2852-2 2N2852-3 2N2853 2N2853-1 2N2853-2 2N2853 -3 2N2854 2N2854-1

Contextual Info: 8134693 SEMICOA MO DÉ 5 1 3 ^ 3 QDDOIEb 3 -Q\ NPN SILICON POWER TRANSISTORS Cont’d) Maximum Ratings Device Dissipation Type No. @ 25°C NPN (Case) Watts 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337 2N1617 2N4897 2N4150 2N5152

Contextual Info: 2N2851-2 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.4 @I(C) (A) (Test Condition)1.0

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N2115

Abstract: 2N2849-2 TO111 package 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-3
Contextual Info: _ B t U iU E L E C T R O N IC S , IN C .\- 9 COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No Case 2N2150 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

2N3016

Abstract: 13421 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1
Contextual Info: 17 SILICON POWER TRANSISTORS CURREN T G A IN S A TURATIO N VO LTAG ES 8> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M A X. V CE 'c V A V CE s V BE(s) V I V *C A I *B A 5 AMP SILICON NPN 2 N2657 2N2658 2N2850-1 TO-5 TO-5 TO-5 80 100 100 60

2N2856

Abstract: a/TO111
Contextual Info: A P I ELECTRONICS INC ' 00 43 59 2 A P I E L E C T R O N I C S ' INC 5b Ï Ë J 00435^5 0D0DE51 fl 26C 00221 ~T ~33~Dt COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No 2N1616 2N1617 2N1618 2N1702 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-2 2N2849-3

Contextual Info: Ic = 3.0 AMPS DEVICE TYPE PACKAGE 2N1647 2N1648 2N1649 2N1650 T O -111 TO-111 TO-111 TO-111 80 80 80 80 80 120 80 120 6.0 6.0 6.0 6.0 20.0 20.0 20.0 20.0 15 15 30 30 - 45 45 90 90 0.5 0.5 0.5 0.5 10.0 10.0 10.0 10.0 1.2 1.2 1.2 1.2 1.0 1.0 1.0 1.0 0.1 0.1

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL TS S E MI CON DU CT OR DE^BilflSiD 95D 02091 7133-07 -r-'ìò-ch Ic = 3.0 AMPS DEVICE TYPE BVce0 PACKAGE VOUS 2N1647 2N1648 2N1649 2N1650 2N2101 TO-111 TO-111 TO-111 TO-111 TO-61 T0-5/S TO-5 T0-5/S TO-5 TO-59 T0-5/S TO-5

2N3016

Abstract: SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720
Contextual Info: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40

4233A

Abstract: 535x 184 324 DIODE 2N5383 2N3055C
Contextual Info: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8

TO111 package

Abstract: 2N2150 2N2849 2N2115 2N2849-2 2N2151 2N2657 2N2658 2N2849-1 2N2849-3
Contextual Info: _ B t U iU E L E C T R O N IC S , IN C .\- 9 COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No Case 2N2150 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 T 0111 TO-5 STUD TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered