13421 Search Results

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH4M32CJJ-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 134217728-BIT (4194304-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The M H 4 M 3 2 C J J is 4 1 9 4 3 0 4 -w o rd by 32-bit dynamic R AM module. Th at module consists o f nine industry standard 4 M

Contextual Info: MITSUBISHI LS Is {DRAM MODULE MH2M64CXPJ-6,-7 FAST PAGE MODE 134217728-BIT 2097152-WORD BY 64-BIT) DYNAMIC RAM DESCRIPTION The MH2M64CXPJ is 2097152-word x 64-bit dynamic RAM module. This consists of eight industry standard IM x 16 dynamic RAMs in SOJ and three industry standard input

Contextual Info: MITSUBISHI LS Is M H 16M08A J -6 ,-7/ MH16M08ACJ-6.-7 FAST PAGE MODE 134217728-BIT 16777216-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 1 6 M 0 8 A J /A C J is 1 6 7 7 7 2 1 6 -w o rd b y 8 -b it d ynam ic R AM and c o n s is ts

Contextual Info: MITSUBISHI LS Is <DRAM MODULE MH4V325CJJ-5,-6,-7,-5S,-6S,-7S HYPER PAGE MODE 134217728-BIT 4194304-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4V325CJJ is 4194304-word by 32-bit dynamic RAM module. That module consists of nine industry standard 4M x 4 dynamic RAMs in TSOP.

TC58FVM7B5BTG65

Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
Contextual Info: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as

TC58FVM7B5BTG65

Abstract: TC58FVM7t5BTG65 BK-10 HA145
Contextual Info: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as

Contextual Info: MITSUBISHI LSIs Some contents are subject to change without notice MH2S64DLD-7,-8A,-8,-10 134217728-BIT 2097152-WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH2S64DLD is 2097152-word by 64-bit Synchronous DRAM module. This consists of eight industry standard 2Mx8 Synchronous DRAMs in

Contextual Info: MITSUBISHI LSIs P ra JM n a ry Some of contents are subject to change without notice. MH2V645DZJJ-5,-6,-7,-5S,-6S,-7S HYPER PAGE MODE 134217728-BIT 2097152-WORD BY 64-BIT DYNAMIC RAM DESCRIPTION The MH2V645DZJJ is 2097152 - word by 64 - bit dynamic RAM module. This consists of eight industry standard 2Mx8

20DQ

Contextual Info: P re li'fflim ry Spec. MITSUBISHI LSIs MH4M325DXJ/DNXJ-5,-6,-7 HYPER PAGE MODE 134217728-BIT 4194304-WORD BY 32-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW) [Single side] DESCRIPTION The MH4M325DXJ/DNXJ is 4194304 -word x 32-bits dynamic RAM. This consists of eight industry standard 4M x 4 dynamic

BA254

Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
Contextual Info: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features

Contextual Info: MITSUBISHI LSIs DRAM MODULE MH4V32CJJ-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 134217728-BIT (41943Q4-WORD BY 32-BIT) DYNAMIC RAM PIN CONFIGURATION (TOP VIEW) [Double side] (Front side) (Back side) p DQo 4 DQ2 6 DQ4 6 DQe 10 Vcc 12 Ao 14 A í 16 A i 18 Ae 20 NC

Contextual Info: MITSUBISHI LSIs <DRAM MODULE MH4M32AATJ-6,-7 FAST PAGE MODE 134217728-BIT 4194304-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M32AATJ is 4194304-word x 32-bit dynamic RAM. PIN CONFIGURATION (TOP VIEW) [Both side] This is consists of eight industry standard 4M x 4 dynamic

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH4M325CXJ-5,-6,-7/ MH4M325CNXJ-5,-6,-7 HYPER PAGE MODE 134217728-BIT (4194304-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M325CXJ/CNXJ is 4194304-word x 32-bit dynamic RAM. This consists of eight industry standard 4M x 4

MH28D72KTN-10

Abstract: MH28D72KTN-75 MH28D72KTN-75A 045-300 22 ba final year
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH28D72KTN-10,-75,-75A 9,663,676,416-BIT 134,217,728-WORD BY 72-BIT Double Data Rate Synchronous DRAM Module DESCRIPTION The MH28D72KTN is 134217728 - word x 72-bit Double

MH2V645CZJJ-6S

Abstract: MH2V645CZJJ-6 MH2V645CZJJ6 MH2V645CZJJ-5
Contextual Info: MITSUBISHI LSIs Preliminary MH2V645CZJJ-5,-6,-7,-5S,-6S,-7S Some of contents are subject to change without notice. HYPER PAGE MODE 134217728-BIT 2097152-WORD BY 64-BIT DYNAMIC RAM DESCRIPTION The MH2V645CZJJ is 2097152 - word by 64 - bit dynamic RAM module. This consists of eight industry standard 2Mx8

Contextual Info: MITSUBISHI LS Is MH4M32AXJ-6,-7/ MH4M32ANXJ-6.-7 FAST PAGE MODE 134217728-BIT 4194304-WQRD BY 32-BIT DYNAMIC RAM DESCRIPTION The M H 4 M 3 2 A X J /A N X J dynamic RAM is 41 9430 4-w o rd module. That module by x 3 2 -bit consists of PIN CONFIGURATION (TOP VIEW) [Single side]

Contextual Info: MH4M32AATJ-6,-7 FAST PAGE MODE 134217728-BIT 4194304-WQRD BY 32-BIT DYNAMIC RAM DESCRIPTION The MH4M32AATJ ¡s 4194304-word x 32-bit dynamic RAM. PIN CONFIGURATION (TOP VIEW) [Both side] This is consists of eight industry standard 4M x 4 dynamic o RAMs in TSOP.

Contextual Info: MH16M8ATJA-6,-7 FAST PAG E M O DE 134217728-BIT 16777216-W O R D BY 8-B IT DYN AM IC RAM DESCRIPTION The M H 1 6 M 8 A T J A is 1 6 7 7 7 2 1 6 -w ord by 8 -b it dynamic ^A M of eight and consists industly standard PIN CONFIGURATION (TOP VIEW) (Both side)

Contextual Info: MITSUBISHI LS Is MH16M08ATJ-6,-7 FAST PAGE MODE 134217728-BIT 16777216-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION The M H 16 M 08 A T J is 16 777216-w ord RAM of eight and consists industly by 8 -b it dynamic standard PIN CONFIGURATION (TOP VIEW) (Both side]

20ps20v

Abstract: DP-18 ay 9j a13421a 13421a
Contextual Info: H H A A 1 3 4 2 1 A 1 3 4 2 1 A , M P Dual Bridge Drivers D escription H A 13421A The HA 13421A and HA 13421 AM P m onolithic power ICs are dual bridge drivers. The maximum driving current and voltage are 0.33 A x 12 V per bridge. Therefore, the best use for these parts is in

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH4M32BJ-6,-7/ MH4M32 NBJ-6, -7/ MH4M32SBJ-6,-7 FAST PAGE MODE 134217728-BIT (41943Û4-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M32BJ/NBJ/SBJ is 4194304-word by 32-bit PIN CONFIGURATION (TOP VIEW) [Both side] dynamic RAM module. That module consists of thirty-two

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH2M64CXPJ-6,-7 FAST PAGE MODE 134217728-BIT (2Q97152-WORD BY 64-BIT) DYNAMIC RAM DESCRIPTION The MH2M64CXPJ is 2097152-word x 64-bit dynamic RAM module. This consists of eight industry standard 1M x 16 dynamic RAMs in SOJ and three industry standard input

Contextual Info: P re lim in a ry Speo. M it s u b i s h i Some contents are subject to chanqe without notice. l s is _ MH2S64CZJJ-12,-15 134217728-BIT 2097152-WORD BY 64-BIT SynchronousDRAM DESCRIPTION APPLICATION The MH2S64CZJJ is 2097152-word by 64-bit Synchronous DRAM module. This consists of sixteen

Contextual Info: MITSUBISHI LS Is {DRAM MODULE MH4M32CXJ-5,-6,-7/ MH4M32CNXJ-5,-6,-7 FAST PAGE MODE 134217728-BIT 4194304-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M32CXJ/ CNXJ is 4 1 94304-word by PIN CONFIGURATION (TOP VIEW) [Single side] 3 2 -bit 1 2 3 4 5 dynamic RAM module. That module consists of nine industry