20DQ Search Results

ml 94v-0

Abstract: SUYIN BATTERY
Contextual Info: 1 I E I 3 I * l 5 l 6 l 7 l 8 l 9 I LO I LI I IE I 13 I 14 I E I 1£ I 17 I 18 I 3Q .a0±0 .30 Z7.0±a.2Q 2 3 .5 0 ± 0 -1 5 Recommended P.C.B Layout 20.00^0.10 5.00 . 5.00 1.2 D -$~w - m— m ~<f " ‘i T T ‘f ' Y ~ !' i !'lisi '! lt=i) !' '! 20-DQ

1720b

Contextual Info: IBM11M1720B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: - • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 Buffered inputs except RAS, Data

Contextual Info: PRELIMINARY MICRON I 4’ 8 M E Gx64 SDRAM SODIMMs TECHNOLOGY, INC. SMALL-OUTLINE -s = WT | j Q II I t U n n i V I For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html II I t I I | j I I I I

Contextual Info: MICRON 8’16’ 32 M EGx72 I BUFFERED DRAM DIMMs n o AM LJ 11 M lV I MT9LD T 872(F) X, MT18LD(T)1672(F) X, MT36LD(T)3272(C)(F) X H n •■■ Itfl C j | J I I I For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/

Contextual Info: HB56SW864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-776A Z Rev. 1.0 Apr. 23,1997 Description The HB56SW864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: KMM372V804BS DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 ELECTRONIC! DRAM MODULE KMM372V804BS Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t cacp(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

1769-MODULE

Abstract: 1769-BA BATTERY 1794-acnr15 technical specification 1756-QR107 1769-SDN 1769-CRR1 1769-HSC real to integer logix5000 1794-acnr15 1784-CF64
Contextual Info: DriveLogix 5730 Controller for PowerFlex 700S Drives with Phase II Control Firmware Version 15.04 User Manual Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. Safety Guidelines for the Application, Installation

82357B

Abstract: ni usb 232 10833D 82350B
Contextual Info: Agilent Connectivity Hardware for PC-to-Instrument Connections Data Sheet HFU IPPLFE" with Agilent GPIB and Instrument Control Products ‡&KRRVHWKHEHVWZD\WRFRQQHFW \RXU3&WR*3,%86%DQG56 LQVWUXPHQWV ‡7DNHDGYDQWDJHRIVWDQGDUG3&

3M59

Contextual Info: moi EDI8M32256C E le ctro n ic D n l g i i Inc. High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module ]F O M ^ T D [ Features T h e E D I8 M 3 2 2 5 6 C is a h ig h s p e e d 8 megabit Static 256Kx32 bit C M O S Static R A M module organized a s 256K words by 32 bits. This

IL324

Abstract: ZM14 062 JRC
Contextual Info: ADVANCE 1, 2 MEG X 32 SDRAM DIMM MICRON I TECHNOLOGY, INC. MT2LSDT132U MT4LSDT232UD SYNCHRONOUS DRAM M O D U L E F or the latest data sheet revisions, please refer to the Micron Web site: www.m icron.com /m ti/m sp/htm l/datasheet.htm l FEATURES * * * * *

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

5B2 glass

Abstract: sc2383
Contextual Info: O K I Sem iconductor_ M SC23836AA-XXBS20/PS20 8,388,608-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23836AA-xxBS20/DS20 is a fully decoded 8,388,608-word x 36-bit CMOS Dy­ namic Random Access M em ory M odule com posed of sixteen 16-Mb DRAMs 4M x 4 and four

ksz9031

Abstract: KSZ9031RN SM802
Contextual Info: 49ROXPH Micrel New Product Highlights Table of Contents MIC94300/MIC94310  Power Supply Output Noise Attenuators .2 MIC2782  Dual-Input Push Button Reset IC with Immediate and Delayed Outputs. 3

Contextual Info: S che m atic: n H .j E l e c t r i c a l S p e c i f i c a t i o n s : @25 C Isolation Voltage: 1500 Vrms Input to Output Is o la tio n 500 T u rn s V o lta g e : R a tio : TX 1CT:1CT CABLE SIDE OCL: 3 5 0 u H In s e r tio n R e tu rn C o m p le te th e

THMY641661BEG

Contextual Info: TO SHIBA TH M Y641661 BEG-80.-10 TENTATIVE TOSHIBA HYBRID D IGITAL INTEGRATED CIRCUIT 16,777,216-W O R D BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY641661BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT/BFTL DRAMs on a printed circuit board.

Contextual Info: j _ j g j ¥ | IB M 1 1 M 4 7 2 0 D 4M x 72 DRAM MODULE Features • 168 Pin JED EC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: - • 4M x72 Fast Page Mode DIM M • Performance:

Nippon capacitors

Contextual Info: HB56S872ES Series 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-559 Z Preliminary Rev. 0 Apr. 08, 1996 Description The HB56S872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: HB56S872ES Series 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-559 Z Preliminary Rev. 0.0 Apr. 08, 1996 Description The HB56S872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

MT9LD872G

Contextual Info: 8,16,32 MEG X 72 BUFFERED DRAM DIMMs MICRON I TECHNOLOGY, INC- MT9LD872 X, MT18LD T 1672 X, MT36LD(T)3272 X DRAM MODULE For the latest data sheet revisions, piease referto the Micron Web site: www.micron.com/mti/msp/htmt/ctatasheeLhtml FEATURES PIN ASSIGNMENT (Front View)

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS UG x t ic h ic o n Chip Type, Higher Capacitance Range series tali»Sohignl • Chip T y p e , higher capacitance in larger case siz e s ^ 1 2 .5 , £ 1 6 , £18, £2 0 • Designed for surface mounting on high density P C board.

transistor c 6073

Abstract: video image processing
Contextual Info: Complete Your Networld www.cas-well.com 3G Wireless Wireless Gateway Media Server VoIP, Video/Image Processing Network Management ( RAS, QoS, Load Balancing ) Security ( Firewall/VPN, IDS/IPS, Anti-Virus, 7$%/(RI&217(176 $ERXW&$ 5HIHUHQFH7DEOH

Contextual Info: MICRON I 8 , 16, 32 MEG X 72 BUFFERED DRAM DIMMs TECHNOLOGY, INC. H R AM U riMIVI RA I I! IVI MT9LD872 X, MT18LD1672X, MT36LD3272 X F or the latest data sheet revisions, please refer to the Micron Web site: www.m icron.com/m ti/msp/htm l/datasheet.htm l FEATURES

Contextual Info: ADVANCE 2 MEG X 64 SDRAM SODIMM MICRON I TECHNOLOGY, INC. SMALL-OUTLINE SDRAM MODULE MT8LSDT264H FEATURES • JEDEC-standard 144-pin, small-outline, dual in-line memory module SODIMM • Utilizes 83 and 100 MHz SDRAM components • Nonbuffered • 16MB • Single +3.3V +0.3V power supply

Contextual Info: IBM11T2645HP I = 2M X 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • 2Mx64 Extended Data Out SO DIMM • Performance: -60 -6R -70 tRAC ; RAS Access Time 60ns 60ns 70ns tcAc CAS Access Time