2N107 Search Results

Contextual Info: 2N107 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)12 I(C) Max. (A)10m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)60õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N1074 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)8.0m

2N1075

Contextual Info: 2N1075 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)8.0m

Contextual Info: POWER TRANSISTORS PT TYPE NO. @ M A X IM U M RATINGS 25°C Ev/ra M v r a i m j m le Watts V V V A @ hFE M IN MAX le A Vci V Sat Test Voltages Conditions V ce V be le Ib V V A A Iebo ma 2N1069 50 60 45 9 4 10 50 1.5 4 3 4.5 1.5 .3 •100 2N1070 50 60 45 9 4

2N3238

Abstract: 2N3239 2N1069 2N1070 2N1487 2N1488 2N1489 2N1490 2N3863 2N2305
Contextual Info: POWER TRANSISTORS TYPE NO. PT @ MAXIMUM RATINGS 25°C Ev/ra M v ra im j m le Watts V V V A MIN MAX @ le Vci A V Sat Test Voltages Conditions Vce Vbe le Ib Iebo V V A A ma hFE 2N1069 50 60 45 9 4 10 50 1.5 4 3 4.5 1.5 .3 •100 2N1070 50 60 45 9 4 10 50 1.5

germanium transistors NPN

Abstract: CASE TYPE TO13 2N1326 npn germanium 2n539 2N1329 2N539A 2N538A 2N538 Germanium power
Contextual Info: germanium power transistors /*Sl » PNP TO-13 lc M A X = 3A VcEO(SUS) = 30 to 100V Iif e Type# NPN Comple­ ment VCEO(SUS) (Volts) (Volts) @ Ic/VcE (Min-Max @ A/V) 2N1078 2N1328 2N1331 2N1333 2N1330 2N1329 2N1332 2N1334 60(Vces) 30(Vces) 80(Vces) IOO(Vces)

2N3238

Abstract: 2N3233 2N3236 2N3239 2N3232 2N3240 2N3667 2N3863
Contextual Info: POWER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS Ic V V A V h FE MIN MAX Ic A ? VCE V Sat Test Voltages Conditions V a V bc Ic Ib la o V V A A ma 2N1069 50 60 45 9 4 10 50 1.5 4 3 4.5 1.5 .3 2N1070 50 60 45 9 4 10 50 1.5 4 1 4.5 1.5 .3 .100 2N1487

2N3236

Abstract: 2N3864 2N1070 2N1488 2N2305 2N3667 2N3771 2N4347 2N5559
Contextual Info: industrial power transistors 136 -~-~~~-~~-~~~~-~ SILICON NPN TRANSISTORS 15 Amp TYPE NUM8ER CASE SIZE 2N1069 2N1070 2N,1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3234 2N3235 2N3236 2N3442 2N3863 2N3864 2N4347 2N4395 2N4396 2N5559

2N1412A

Abstract: 2n5156 2N1100 2N1073B 2N1412 Germanium Power Devices 2n1146 2N2291 2N2288 2N27S
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type VcBO V 2N629 2N630 2N1073 2N1073A 2N1073B TO-3 TO-3 TO-3 TO-3 TO-3 80 100 40 80 120 2N1430 2N2212 2N2288 2N2289 2N2290 TO-41* TO-41* TO-3 TO-3 TO-3 120 120 40 80 120 2N2291 2N2292 2N2293 2N2294 2N2295 TO-3

Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type VcBO V y CEO V yf.BO y Vcek V y ces V Min. CURRENT G AIN hfE ^C1 @ /c Max. V A SA TU R A TIO N VOLTAGES y CEIt ^ÄF l) Ic @ is V V A A 6j.c °C /W 10 AMP GERMANIUM PNP (Cont.) 2N629 2N630 2N1073 2N1073A 2N1073B

Contextual Info: 2N1076 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)8.0m

2N1069

Abstract: 2N3233 2N3236 2N3226 2N3442 2N1070 2N3232 2N3863 2n4395
Contextual Info: industrial power transistors 136 -~-~~~-~~-~~~~-~ SILICON NPN TRANSISTORS 15 Amp TYPE NUM8ER CASE SIZE 2N1069 2N1070 2N,1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3234 2N3235 2N3236 2N3442 2N3863 2N3864 2N4347 2N4395 2N4396 2N5559

2N1069

Abstract: 2N1070 2N3865 2N3863 2N3239 2N3238 2N1487 2N1488 2N3667 2N1490
Contextual Info: POWER TRANSISTORS TYPE NO. PT @ MAXIMUM RATINGS 25°C Ev/ra M v r a i m j m Ic Watts V V V A hFE @ MIN MAX Ic A Vet V Sat Voltages V ce V be V V Test Conditions Ic Ib A A I ebo ma 2N1069 50 60 45 9 4 10 50 1.5 4 3 4.5 1.5 .3 •100 2N1070 50 60 45 9 4 10 50

B0935

Abstract: 2s0880 je181 to127 2SC1983 Sanken 2S0762 B0177 to-53 MJE31A GS2013 G
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 >= 2.5 A, 2N389 2N1470 BOT29A BOT29A BOT29AF B0177 2N1079 2N1080 2N3418S 2N2033 2N2034 2N2035 2N2036 2N2828 2N2829 2N1886 R4922 B0116 2N3418 BOT31AF BOT31AF MJE31A 2N4232 2N4232A 042C7

Contextual Info: 2N1077 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)8.0m

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

BD561

Abstract: BD585 PT9788A 8D434 BDX24 2SD810 BD186 motorola MJE2480 BD163 BD272
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO t0N T(CE)Mt Max PD Max Max ON) Min (Hz) (A) (8) Max (Ohms) Toper Max CO Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 MRF222 MRF223

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

2N1069

Abstract: 2N3233 2N3235 2N3236 2N3238 2N3239 2N1070 2N230 2N3232 2N3240
Contextual Info: POWER TRANSISTORS 'n , -•i ‘ 7 TYPE NO. f’T I t • 2N1069 50 w ., : •• r, , Sat ■ ■-c J . . j v » > V '‘ .-.so« , . v :i! \ Test Corrliîions In A A ll! 10 50 1.5 4 3 4.5 1.5 .3 .100 10 50 1.5 4 1 4.5 1.5 .3 .100 6 15 45 1.5 4 3

2N3865

Abstract: 2N3233 2N1069 2N3239 2N3238 2N3236 2N3235 2N3232 2n3713 2N1488
Contextual Info: 8365700 SOLID POWER CORP ‘SOLID POWER CORP 95C 0 0099 0 TDF|fi 3bS 7DD DOOODÌT b f TS POWER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V c b o BV ceo BV ebo Ic V V V A V Sat Test Voltages Conditions VcE V be Ic Ib V V A A @ hFE MIN MAX Ic A

2N1384

Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
Contextual Info: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP

2H5061

Abstract: 2N268 2N2601 2N893
Contextual Info: discrete devices lir^ ] JEmitronicr hot line T O L L F R E E N U M B E R 800-777-3960 thyristors and triggers silico n controlled rectifiers Type 'Note 1 Forward Current It (Amps) Max. Forward Max. Reverse Voltasti V fom / V rom (volts) (Noto 2) Maximum

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible