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    2N1330 Search Results

    2N1330 Datasheets (7)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N1330
    Germanium Power Devices Germanium Power Transistors Scan PDF 400.87KB 4
    2N1330
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 79.36KB 1
    2N1330
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 83.92KB 1
    2N1330
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 76.59KB 1
    2N1330
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 92.84KB 1
    2N1330
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 89.13KB 1
    2N1330
    Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF 77.1KB 1
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    2N1330 Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies RWR82N1330BSS74

    Through Hole Resistor, 133 ohm, RWR Series, 1.5 W, ? 0.1%, Axial Leaded, Wirewound, ? 20ppm/?C - Tape and Reel (Alt: RWR82N1330BSS74)
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    Avnet Americas RWR82N1330BSS74 Tape & Reel 18 Weeks 2,000
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    Vishay Intertechnologies RWR82N1330BSBSL

    - Bulk (Alt: RWR82N1330BSBSL)
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    Avnet Americas RWR82N1330BSBSL Bulk 18 Weeks 100
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    Vishay Intertechnologies RWR82N1330BSRSL

    - Custom Tape W/Leader (Alt: RWR82N1330BSRSL)
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    Avnet Americas RWR82N1330BSRSL Tape w/Leader 18 Weeks 100
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    • 1000 $133.35
    • 10000 $132.00
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    Vishay Intertechnologies RLP02N13300GS00

    - Bag (Alt: RLP02N13300GS00)
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    Avnet Americas RLP02N13300GS00 Bag 9 Weeks 10
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    • 100 $47.85
    • 1000 $46.81
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    Vishay Intertechnologies RLP02N13300GS14

    Resistor, 1.33 kOhm, ? 2%, 2 W, Axial Leaded, Wirewound, Precision - Bag (Alt: RLP02N13300GS14)
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    2N1330 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    germanium transistors NPN

    Abstract: CASE TYPE TO13 2N1326 npn germanium 2n539 2N1329 2N539A 2N538A 2N538 Germanium power
    Contextual Info: germanium power transistors /*Sl » PNP TO-13 lc M A X = 3A VcEO(SUS) = 30 to 100V Iif e Type# NPN Comple­ ment VCEO(SUS) (Volts) (Volts) @ Ic/VcE (Min-Max @ A/V) 2N1078 2N1328 2N1331 2N1333 2N1330 2N1329 2N1332 2N1334 60(Vces) 30(Vces) 80(Vces) IOO(Vces)


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    2n10782n13282n13312n1333+142n13302n13292n13322n13342n1321germanium transistors npncase type to132n1326npn germanium2n5392n539a2n538a2n538germanium power PDF

    2N158A

    Abstract: germanium NPN 2N1761 2n1218 2N2067 germanium transistors NPN TO13 MT28 2N1042 2N1044
    Contextual Info: GERMANIUM POWER TRANSISTORS h rc I c/ Y Type Number Case Type Y ebo V J'c E O d w l y AíV ce Min-Max ® A /V @ V CE @ /c //fl (V® A/A) (V@A/V) (mA®V) Po® Tc =25°C &JC (watts) r e /W ) CC) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669 2N2670


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    2n2668mt-272n26692n2670+122n1042mt-282n10432n158agermanium npn2n17612n12182n2067germanium transistors npnto13mt282n1044 PDF

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    2g1012g1022g1032g109+152g2202g2212g2222g2232g2242n1892n1136b2n420b1151 equivalent2sa114oc592t3122t203sft1252n1152 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    transistor 2n4st25c transistor2n407 transistor2sa114+6tfk 808transistor 2sc124sf1222ge2 transistortfk 877tfk 748 PDF

    2N3215

    Abstract: MT28 TO13 2n3214 Germanium power
    Contextual Info: GERMANIUM POWER DEVICES b3E ]> • 3TM7375 000057Ö Öb3 ■ G P P GERMANIUM POWER TRANSISTORS Case Type Type Number V e to irui V hFE IC/VCE Min-Max & A/V) Vao v VC£iJal) (V@A/A) Vie @Ic/VcE (V@A/V) IcEV @ VcE (mA @ V) P d@ Tc = 25°C 9ir TJimaxi /r


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    3tm73752n26682n26692n2670+112n10422n10432n10442n10452n25562n25572n3215mt28to132n3214germanium power PDF

    germanium transistors NPN

    Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
    Contextual Info: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A


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    2n2668mt-272n26692n2670+112n1042mt-282n1043germanium transistors npnto13mt28germanium power2n10442n10452n25562n2557 PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF

    2N1375

    Abstract: 2n1310 2N1389 2N1410 2N1416 2SC1940 Motorola 2N1363 sot-23 TAW texas 2N1307 2N1377
    Contextual Info: LOW•POWER SILICON NPN Item Number Part Number 10 -15 20 25 30 BFY41 BFR21 KT630A BF156 SE7002 SE7002 MPS-LOl MPSLOl BSY79 2S0668 -2S0669 2SCB17 2SCB17 2N1445 KT630B HSE419 2SC1622A 2SC1622A 2SC2235 2SC1841 2SC28810 2SC4102 2SC1940 2SC1940 2SC1S41P 2SC1841P


    Original
    bfy41bfr21kt630abf156+15se7002bsy792s0668-2s06692scb172n13752n13102n13892n14102n14162sc1940motorola 2n1363sot-23 tawtexas 2n13072n1377 PDF

    2N206

    Abstract: 2N2556 2N2282 TO13 germanium transistors NPN MT28 2N10 2N2067 2N1042 2N1043
    Contextual Info: GERMANIUM POWER TRANSISTORS h rc I c / Y ce Type Number Case Type J'c E O d w l Y ebo V y AíV K « Min-Max ® A /V @/c//fl (V® A/A) @ V CE (V@A/V) (mA@V) P d@ Tc =25°C &JC (watts) r e /W ) r e ) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669


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    2n2668mt-272n26692n2670+112n1042mt-282n10432n2062n25562n2282to13germanium transistors npnmt282n102n2067 PDF

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


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    2n34a2n43a2n44a2n59a+162n59b2n59c2n60a2n60b2n60c2n61an17022n2772sa632n390al204a2n408tfk 940oc592n3742n1922 PDF

    AC127

    Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
    Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any


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    2n24a2n34a2n38a2n43a+162n44a2n59c2n60a2n61a2n61boc77-309ac127cv7089ac1252sb415oc71ad161cv8615hj17dad1422n3278 PDF