2N2560
Abstract: MT27 2N2553 2N1041 MT28 2N1043 2n1040 2N1042
Contextual Info: ermanium power transistors 142 PNP ALLOY TRANSISTORS 1 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE' TYPE NUMBER CASE SIZE VCB VCE VEB VCE Ic (A) Min. Max. 2N1038 2N1039 2N1040 2N1041 2N2552 2N2553 2N2554 2N2555 2N2556 2N2557 2N2558 2N2559 TO-5 TO-5 TO-5 TO-5
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2n10382n10392n10402n1041+112n25522n25532n25542n25552n25562n25572n2560mt27mt282n10432n1042
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2N1038
Abstract: 2n2553 2N1040 2N1041 2n1039 2N2552 2N2557 ti 2N2553 2N2556 2N1036
Contextual Info: TYPES 2N1038, 2N1039, 2N1040, 2N1041 • 2N2552, 2N2553, 2N2554, 2N2555 • 2N2556, 2N2557, 2N2558, 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS M3 I 5s :0B Zssp Guaranteed 4 0 -, 60 -. 8 0 -, or lOO-VOLT UNITS 20 WATTS AT 259C CASE TEMPERATURE
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2n10382n10392n10402n1041+82n25522n25532n25542n25552n25562n2557ti 2n25532n1036
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Contextual Info: 2N2556 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0
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germanium transistors NPN
Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
Contextual Info: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A
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2n2668mt-272n26692n2670+112n1042mt-282n1043germanium transistors npnto13mt28germanium power2n10442n10452n25562n2557
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2N2458
Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386
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2n19722n909st6600st6601+15sa2715bsx702sc5622n4792n479a2n24582n2537 texas2n25512n24572n2429sgs-ates c4262n24252n23982n2431bf253
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MP2143
Abstract: AD162 2S8474 ad139 2N352 2N353 2N669 2N554 2N2282 2n555
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 >= NKT302A 2S8463 2S8474 PTC194 2N352 2N352 2N353 2N353 2N296 SK3052 ~~~~~A 15 20 2N256 NKT453 2N555 2N157 2N157A CK315 CK415 MN28 ~~f:16 25 30 NKT452 2N554 NKT415 NKT451 2N589 2N2061 2N2062 2N2063 ~~~~64
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nkt302a2s84632s8474ptc194+112n3522n3532n296sk3052mp2143ad162ad1392n6692n5542n22822n555
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175
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2N2458
Abstract: TRF648 sgs-ates transistors FBase-F Package 2N2425 2N2455 westcode diode 2n2534 2n2474 2N2431
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 55 Ie Max (A) Westcode Westcode MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec Marcomclec MarconiElec MarconiElec MarconiElec MarconiElec
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2n2458trf648sgs-ates transistorsfbase-f package+62n24252n2455westcode diode2n25342n24742n2431
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2N158A
Abstract: germanium NPN 2N1761 2n1218 2N2067 germanium transistors NPN TO13 MT28 2N1042 2N1044
Contextual Info: GERMANIUM POWER TRANSISTORS h rc I c/ Y Type Number Case Type Y ebo V J'c E O d w l y AíV ce Min-Max ® A /V @ V CE @ /c //fl (V® A/A) (V@A/V) (mA®V) Po® Tc =25°C &JC (watts) r e /W ) CC) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669 2N2670
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2n2668mt-272n26692n2670+122n1042mt-282n10432n158agermanium npn2n17612n12182n2067germanium transistors npnto13mt282n1044
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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transistor 2n4st25c transistor2n407 transistor2sa114+6tfk 808transistor 2sc124sf1222ge2 transistortfk 877tfk 748
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germanium transistor
Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types
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germanium transistor2n51212n54182n5539+32n5637v2205mm8006
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2N3215
Abstract: MT28 TO13 2n3214 Germanium power
Contextual Info: GERMANIUM POWER DEVICES b3E ]> • 3TM7375 000057Ö Öb3 ■ G P P GERMANIUM POWER TRANSISTORS Case Type Type Number V e to irui V hFE IC/VCE Min-Max & A/V) Vao v VC£iJal) (V@A/A) Vie @Ic/VcE (V@A/V) IcEV @ VcE (mA @ V) P d@ Tc = 25°C 9ir TJimaxi /r
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3tm73752n26682n26692n2670+112n10422n10432n10442n10452n25562n25572n3215mt28to132n3214germanium power
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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rca h 5412t3122n2654as218 transistor+6gex 74adiode germanium 1n283k3004tfk diodeac132ti-483
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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68b09sn74als04bnsn74als08nsn74als00an+16ca3046ua733lm311plm318ca309478h05cp4071data sheet ic 74082n4891ic 7408mda970a2mda25001854-0071mda25022n4342ic ttl 7400
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2N1163
Abstract: 2N1165 2N1167 2N2553 2N2552 2N2669 2N2556 2N1163A A6540 2N1167A
Contextual Info: germanium power transistors PNP TO-41 = 10 to 50A h fE @ Ic / V c e V c e o s u s V ebo Type# (Volts) (Volts) 2N1163 2N1163A 2N1165 2N1165A 2N1167 2N1167A 25 25 35 40 45 50 20 25 25 40 30 50 (Min-Max @ A/V) 15-65@25/l 15-65 25/l 15-65@25/l 15-65®25/l
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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2N2067
Abstract: 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A 2N1042
Contextual Info: DI O D E T R A N S I S T O R CO INC ~flM 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC DE Ja àMfl35E D Q D O i n 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581
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2n26682n26692n26702n1042+122n1043mt-27mt-282n20672n32142n158germanium transistors npn2n3215to13mt282n17592n158a
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2n3215
Abstract: TO13 MT28 diode e 2060 2n2284 2N1042 2N1043 2N1044 2N1045 2N2556
Contextual Info: DI O D E T R A N S I S T O R CO INC ~flM DE Ja àMfl35E D Q D O i n 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581
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2n26682n26692n26702n1042+112n1043mt-27mt-282n3215to13mt28diode e 20602n22842n10442n10452n2556
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853impattc5088 transistortransistor c3207tlo84cn+7sec c5088in5355bd2817ac3207 transistortoshiba f630tlo81cpmc74hc533n
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2N3214
Abstract: TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1043 2N1044
Contextual Info: DIODE TRANSISTOR CO INC "ai 28483 52 DIODE T R A N S I S T O R CO INC DE~|efli|fl35E O O D D i n 0 I " 84D 00119 D T- J 5- o7 D1QDE TPidf\15J5TQPi CO., INC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5883
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afl4fl352ddd0111tmi\i515t0rtc-25+152n26682n26692n26702n10422n1043mt-272n3214to372n22832n2282to13diode e 2060mt282n17552n1044
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2N206
Abstract: 2N2556 2N2282 TO13 germanium transistors NPN MT28 2N10 2N2067 2N1042 2N1043
Contextual Info: GERMANIUM POWER TRANSISTORS h rc I c / Y ce Type Number Case Type J'c E O d w l Y ebo V y AíV K « Min-Max ® A /V @/c//fl (V® A/A) @ V CE (V@A/V) (mA@V) P d@ Tc =25°C &JC (watts) r e /W ) r e ) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669
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2n2668mt-272n26692n2670+112n1042mt-282n10432n2062n25562n2282to13germanium transistors npnmt282n102n2067
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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2n34a2n43a2n44a2n59a+162n59b2n59c2n60a2n60b2n60c2n61an17022n2772sa632n390al204a2n408tfk 940oc592n3742n1922
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